Patents by Inventor Eiji Ikawa

Eiji Ikawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for selectively etching polycide layer
    Patent number: 5792710
    Abstract: Disclosed herein is a method of manufacturing a semiconductor device, the method including a step of anisotropic-etching of a high-melting-point (or refractory) metal silicide layer by use of a halogen-containing gas using. This halogen-containing gas has a boron trichloride gas as a main component gas and either one of a chlorine gas or a hydrogen bromide gas as an auxiliary or a sub-component gas.
    Type: Grant
    Filed: March 11, 1997
    Date of Patent: August 11, 1998
    Assignee: NEC Corporation
    Inventors: Kazuyoshi Yoshida, Hidenobu Miyamoto, Eiji Ikawa