Abstract: An improved semiconductor element-manufacturing method which saves a semiconductor wafer from the occurrence of cracks or damage during the manufacture of a semiconductor element and enables solder layers to be deposited without irregularities in the thickness. The method starts with the step of forming a first metal layer acting as an ohmic electrode on each side of the element regions of a semiconductor wafer in which a plurality of active elements are formed or on the whole surface of each side of the semiconductor wafer. Then a second metal layer which has an anticorrosive property and acts as a brazing material when the semiconductor element is mounted between a pair of electrodes is selectively deposited by electroplating on each of the element areas in the first metal layers.