Patents by Inventor Eiji Kajita

Eiji Kajita has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Pyrrolo[1,2-c]imidazole derivatives as orexin type 2 receptor agonists
    Patent number: 11987586
    Abstract: The present invention provides a heterocyclic compound having an orexin type 2 receptor agonist activity. A compound represented by the formula (I): wherein each symbol is as described in the specification, or a salt thereof, is useful as an agent for the prophylaxis or treatment of narcolepsy.
    Type: Grant
    Filed: October 30, 2023
    Date of Patent: May 21, 2024
    Assignee: Takeda Pharmaceutical Company Limited
    Inventors: Yasushi Hattori, Marilena Pira, Yoshiteru Ito, Kohei Takeuchi, Eiji Kimura, Norihito Tokunaga, Shuhei Ikeda, Martin Alexander Pawliczek, Noriyuki Tezuka, Yasutaka Hoashi, Yuhei Miyanohana, Yuichi Kajita, Tatsuki Koike
  • Silicon single crystal wafer and manufacturing method for it
    Patent number: 6245430
    Abstract: A method of making silicon single crystal wafers free of grown-in defects is provided. These wafers are formed from silicon single crystal manufactured by the Czochralski method. Careful control of the pulling rate, V (mm/min), and the temperature gradient G (° C./mm) permits crystals to be formed that are free from OSF rings, and other types of defects.
    Type: Grant
    Filed: September 3, 1999
    Date of Patent: June 12, 2001
    Assignee: Sumitomo Sitix Corporation
    Inventors: Masataka Hourai, Eiji Kajita
  • Manufacturing method for a silicon single crystal wafer
    Patent number: 5954873
    Abstract: A method of making silicon single crystal wafers free of grown-in defects is provided. These wafers are formed from silicon single crystal manufactured by the Czochralski method. Careful control of the pulling rate, V (mm/min), and the temperature gradient G (.degree. C./mm) permits crystals to be formed that are free from OSF rings, and other types of defects.
    Type: Grant
    Filed: December 12, 1997
    Date of Patent: September 21, 1999
    Assignee: Sumitomo Sitix Corporation
    Inventors: Masataka Hourai, Eiji Kajita
  • Silicon single crystal wafer
    Patent number: RE39173
    Abstract: A method of making silicon single crystal wafers free of grown-in defects is provided. These wafers are formed from silicon single crystal manufactured by the Czochralski method. Careful control of the pulling rate, V (mm/min), and the temperature gradient G (° C./mm) permits crystals to be formed that are free from OSF rings, and other types of defects.
    Type: Grant
    Filed: December 20, 2002
    Date of Patent: July 11, 2006
    Assignee: Sumitomo Mitsubishi Silicon Corporation
    Inventors: Masataka Hourai, Eiji Kajita