Abstract: An image capturing device employing as illumination source(s) (flash apparatus(es)) a plurality of light emitting diodes emitting light of different colors; wherein such light emitting diodes are respectively made to emit light in pulsed fashion in turn by emitted color during exposure time(s). Furthermore, during exposure time(s), such light emitting diodes may be made to sequentially emit light in pulsed fashion in turn by emitted color, and/or such light emitting diodes may be made to sequentially emit light in pulsed fashion in turn by emitted color over multiple iterations.

Abstract: An image capturing device employing as illumination source(s) (flash apparatus(es)) a plurality of light emitting diodes emitting light of different colors; wherein such light emitting diodes are respectively made to emit light in pulsed fashion in turn by emitted color during exposure time(s). Furthermore, during exposure time(s), such light emitting diodes may be made to sequentially emit light in pulsed fashion in turn by emitted color, and/or such light emitting diodes may be made to sequentially emit light in pulsed fashion in turn by emitted color over multiple iterations.

Abstract: A semiconductor light emitting device in the present invention is formed by laminating an epitaxial layer 30 including an AlGaInP active layer and a second wafer 23 which transmits light derived from the active layer. The crystal axes of the epitaxial layer 30 and the second wafer 23 are generally aligned with each other and are in the range of ?15° to +15° with respect to a lateral face {100} of the second wafer 23. This semiconductor light emitting device, which is a joining type with high external emission efficiency, allows uniform wafer bonding to be achieved over the entire wafer face with ease and with a high yield without causing bonding failure and wafer cracks.

Abstract: A light emitting element is die-bonded to a portion of a lead frame exposed at the bottom of an opening formed at a top face of a resin package. A reflector to direct light emitted from the light emitting element towards a predetermined direction is attached to the top face of the resin package. Lead terminals are arranged so as to protrude from two opposite side regions of the resin package. A predetermined lead terminal among the plurality of lead terminals, connected to a portion where the light emitting element is die-bonded, is bent upwards, and soldered to the reflector by solder paste.

Abstract: A semiconductor light emitting device in the present invention is formed by laminating an epitaxial layer 30 including an AlGaInP active layer and a second wafer 23 which transmits light derived from the active layer. The crystal axes of the epitaxial layer 30 and the second wafer 23 are generally aligned with each other and are in the range of ?15° to +15° with respect to a lateral face {100} of the second wafer 23. This semiconductor light emitting device, which is a joining type with high external emission efficiency, allows uniform wafer bonding to be achieved over the entire wafer face with ease and with a high yield without causing bonding failure and wafer cracks.

Abstract: A light emitting element is die-bonded to a portion of a lead frame exposed at the bottom of an opening formed at a top face of a resin package. A reflector to direct light emitted from the light emitting element towards a predetermined direction is attached to the top face of the resin package. Lead terminals are arranged so as to protrude from two opposite side regions of the resin package. A predetermined lead terminal among the plurality of lead terminals, connected to a portion where the light emitting element is die-bonded, is bent upwards, and soldered to the reflector by solder paste.

Abstract: An image capturing device employing as illumination source(s) (flash apparatus(es)) a plurality of light emitting diodes emitting light of different colors; wherein such light emitting diodes are respectively made to emit light in pulsed fashion in turn by emitted color during exposure time(s). Furthermore, during exposure time(s), such light emitting diodes may be made to sequentially emit light in pulsed fashion in turn by emitted color, and/or such light emitting diodes may be made to sequentially emit light in pulsed fashion in turn by emitted color over multiple iterations.