Abstract: A light-emitting device includes a power feeding line to which a predetermined voltage is supplied; a light-emitting element formed of a first electrode, a second electrode, and a light-emitting layer interposed between the first electrode and the second electrode; and a driving transistor that controls the amount of current supplied to the light-emitting element from the power feeding line. The power feeding line includes a portion interposed between the first electrode and the driving transistor.

Abstract: An electro-optical device includes a plurality of data lines, a plurality of scanning lines, a plurality of unit circuits that are provided in correspondence with intersections of the data lines and the scanning lines. Each of the data lines is supplied with a data voltage in accordance with a gray-scale level. Each of the scanning lines is supplied with a scanning signal that specifies a writing period during which the data voltage is being written into the corresponding unit circuits. Each of the plurality of unit circuits includes a driving transistor, an electro-optical element, a capacitive element, a power feed line, a first switching element and a second switching element. The driving transistor generates a driving current in accordance with an electric potential of a gate thereof. The electro-optical element generates light with a gray-scale level in accordance with the driving current that is generated by the driving transistor.

Abstract: A light-emitting device includes a drive transistor that controls a current to be supplied to a light-emitting element from a power supply line, an electrical continuity portion that electrically connects the drive transistor with the light-emitting element, an initializing transistor that is turned ON to diode-connect the drive transistor, and a connecting portion that electrically connects the drive transistor with the initializing transistor. The power supply line includes a first portion extending in a predetermined direction. The electrical continuity portion and the connecting portion are formed from the same layer as that of the power supply line and are located on one side along the width of the first portion across the drive transistor.

Abstract: An emissive device includes a substrate; a plurality of light-emitting elements disposed on the substrate; a light-shielding layer opposite the substrate, the light-emitting elements being disposed between the substrate and the light-shielding layer, and the light-shielding layer having light-transmitting portions that transmit light emitted from the light-emitting elements; and a partition composed of an insulating material and disposed on the substrate, the partition partitioning the light-emitting elements and having openings each demarcating the light-emitting region of the corresponding light-emitting element, wherein each of the light-transmitting portions overlaps the corresponding opening and is smaller than the corresponding opening.

Abstract: To improve the unevenness of brightness. A plurality of pixel circuits is arranged in a pixel region A. Main power lines LR, LG, and LB are provided in the outside of the pixel region A. In addition, first sub-power lines Lr1, Lg1, and Lb1 and second sub-power lines Lr2, Lg2, and Lb2 are provided in the inside of the pixel region A so as to be connected to each other at sub-power line connecting points P. Further, the pixel circuits are connected to the first sub-power lines Lr1, Lg1, and Lb1 at pixel connecting points Q. The structure in which these power lines are arranged in a mesh shape enables a considerable reduction in voltage drop and the improvement of brightness unevenness.

Abstract: An image capturing apparatus includes a substrate in which multiple pixel circuits are formed and a driving unit that generates an image signal in which a target has been captured by driving the multiple pixel circuits. When the region in which the multiple pixel circuits is formed is taken as a capturing region, the capturing region includes a fingerprint capturing region for capturing a fingerprint and a vein capturing region for capturing veins.

Abstract: A unit circuit includes a first transistor, a detection element, a second transistor, and a first capacitive element. The first transistor supplies a detection line with a detection signal corresponding to the electric potential of a gate electrode thereof. The detection element is connected to the gate electrode of the first transistor and varies the electric potential of the gate electrode of the first transistor in accordance with an external factor. The second transistor has a first terminal that is connected to the gate electrode of the first transistor and a second terminal that is connected to a second power supply line. The second transistor has a gate electrode that is connected to a scanning line. The first capacitive element holds the electric potential of the gate electrode of the first transistor.

Abstract: To reduce the time for writing a voltage onto a gate of a driving transistor. In an initialization period, a node B is fixed to an initial voltage VINI, transistors are turned on, and a current flows into an OLED element, such that a voltage according to the current is held at the node A. Thereafter, the transistors are sequentially turned off, such that a threshold voltage of a driving transistor is held at the node A. In a writing period, a transistor is turned on and a data signal X-j is supplied, such that a voltage of the node B varies by the amount according to the current flowing into the OLED element. The voltage of the node A varies from the threshold voltage by the amount which is obtained by dividing the voltage variation by a capacitance ratio. In a light-emitting period, the transistor is turned on, such that a current according to the voltage of the node A flows into the OLED element.

Abstract: To reduce the time for writing a voltage onto a gate of a driving transistor. In an initialization period, a node B is fixed to an initial voltage VINI, transistors are turned on, and a current flows into an OLED element, such that a voltage according to the current is held at the node A. Thereafter, the transistors are sequentially turned off, such that a threshold voltage of a driving transistor is held at the node A. In a writing period, a transistor is turned on and a data signal X-j is supplied, such that a voltage of the node B varies by the amount according to the current flowing into the OLED element. The voltage of the node A varies from the threshold voltage by the amount which is obtained by dividing the voltage variation by a capacitance ratio. In a light-emitting period, the transistor is turned on, such that a current according to the voltage of the node A flows into the OLED element.

Abstract: A sensing circuit having a first substrate, a second substrate, a layer of dielectric material, a first electrode, a second electrode and an electrostatic capacitance detection unit is provided. The second substrate faces the first substrate. The dielectric material is held between the first substrate and the second substrate. The first electrode and the second electrode are arranged between the dielectric material and the first substrate. The electrostatic capacitance detection unit is configured to produce a detection signal having an amplitude according to a value of capacitance formed between the first electrode and the second electrode through the dielectric material.

Abstract: A display device includes: a first substrate and a second substrate that face each other; electro-optical elements that are interposed between the first substrate and the second substrate; light detecting units that are provided between the first substrate and the second substrate and output first detection signals having levels corresponding to the amount of incident light; and capacitance detecting units that include capacitive elements each having a first electrode and a second electrode provided between the first substrate and the second substrate, output second detection signals having levels corresponding to the capacitance values of the capacitive elements, and are provided separately from the light detecting units.

Abstract: A pixel circuit includes a light-emitting element which emits light having the intensity corresponding to an amount of a driving current; a driving transistor which supplies the driving current to the light-emitting element; a storing circuit which writes a data signal instructing the light-emitting brightness of the light-emitting element during a writing period of time to store the data signal; and a buffer circuit which supplies a signal output from the storing unit to the driving transistor.

Abstract: An electro-optical device, which has a display area and a plurality of sensing areas for detecting capacitance in the display area, includes a black matrix that is provided in the vicinities of display pixels in the display area, pixel electrodes that individually form the display pixels, a common electrode, a liquid crystal layer that is interposed between the pixel electrodes and the common electrode, a plurality of pixel circuits that individually drive the pixel electrodes, a capacitance detection element that is provided in a corresponding one of the sensing areas to convert a change in thickness of the liquid crystal layer caused by external pressure into a change in capacitance, and a sensing circuit that outputs a sensing signal on the basis of the change in capacitance obtained by the capacitance detection element. The capacitance detection element overlaps the black matrix in plan view.

Abstract: To improve the unevenness of brightness. A plurality of pixel circuits is arranged in a pixel region A. Main power lines LR, LG, and LB are provided in the outside of the pixel region A. In addition, first sub-power lines Lr1, Lg1, and Lb1 and second sub-power lines Lr2, Lg2, and Lb2 are provided in the inside of the pixel region A so as to be connected to each other at sub-power line connecting points P. Further, the pixel circuits are connected to the first sub-power lines Lr1, Lg1, and Lb1 at pixel connecting points Q. The structure in which these power lines are arranged in a mesh shape enables a considerable reduction in voltage drop and the improvement of brightness unevenness.

Abstract: There is provided a method of driving a light emitting device including a light emitting element and a unit circuit that is disposed in correspondence with the light emitting element and drives the tight emitting element in accordance with emission control data generated based on image data, wherein the light emitting device has a temperature sensor and a light receiving sensor. The method includes detecting the temperature of the light emitting device by using the temperature sensor, detecting light emitted from the light emitting element by using the light receiving sensor, and generating the emission control data by correcting the image data in response to the temperature of the light emitting device which is detected by the temperature sensor and the detected value of light which is detected by the light receiving sensor.

Abstract: A light emitting device includes a substrate having transparency, a light emitting element that emits light at least to the substrate side, and a light detecting element that is formed between the light emitting element and the substrate. The light detecting element is formed along an outer frame of the light emitting element in a plan view.

Abstract: To improve the unevenness of brightness. A plurality of pixel circuits is arranged in a pixel region A. Main power lines LR, LG, and LB are provided in the outside of the pixel region A. In addition, first sub-power lines Lr1, Lg1, and Lb1 and second sub-power lines Lr2, Lg2, and Lb2 are provided in the inside of the pixel region A so as to be connected to each other at sub-power line connecting points P. Further, the pixel circuits are connected to the first sub-power lines Lr1, Lg1, and Lb1 at pixel connecting points Q. The structure in which these power lines are arranged in a mesh shape enables a considerable reduction in voltage drop and the improvement of brightness unevenness.

Abstract: A liquid crystal device includes a plurality of selection lines, a plurality of signal lines, a plurality of pixel portions, a plurality of photosensor portions, a plurality of first power lines, and a plurality of sense lines. The plurality of selection lines are provided in a line direction. The plurality of signal lines are provided in a column direction. The plurality of pixel portions are provided at positions corresponding to intersections of the selection lines and the signal lines. The plurality of photosensor portions are provided in correspondence with a portion of the plurality of pixel portions. The plurality of first power lines are provided in the line direction. The plurality of sense lines are provided in the column direction. Each of the plurality of pixel portions includes a first switching element and a liquid crystal.

Abstract: A unit circuit includes a first transistor, a detection element, a second transistor, and a first capacitive element. The first transistor supplies a detection line with a detection signal corresponding to the electric potential of a gate electrode thereof. The detection element is connected to the gate electrode of the first transistor and varies the electric potential of the gate electrode of the first transistor in accordance with an external factor. The second transistor has a first terminal that is connected to the gate electrode of the first transistor and a second terminal that is connected to a second power supply line. The second transistor has a gate electrode that is connected to a scanning line. The first capacitive element holds the electric potential of the gate electrode of the first transistor.

Abstract: To reduce a time for applying a target voltage to a gate of a driving transistor. During an initializing period, both ends of a capacitive element become a short-circuited state by turning on transistors, so that node A and B becomes a voltage made by subtracting the threshold voltage Vthp of the driving transistor from a power source voltage VEL. During a writing period, the transistor is turned on and a data signal X-j is supplied to change the voltage at the node B as much as a voltage corresponding the current which is to flow into an OLED element. The node A is changed from the threshold voltage as much as the value obtained by dividing the voltage change by capacity ratio. During a light-emitting period, the transistor is turned on, so that the current corresponding to the voltage at the node A flows through the OLED element.