Abstract: A technique for improving uniformity in a plane of a substrate is provided. A substrate processing apparatus according an aspect of the present disclosure includes a processing container having a substantially cylindrical shape, a gas nozzle extending in a vertical direction along an inside of an inner wall of the processing container and forming a gas flow path therein, and a gas ejector provided on the processing container and communicating with the gas flow path, the gas ejector being configured to distribute a gas introduced from the gas nozzle and to eject the gas from an outer peripheral portion of the processing container.

Abstract: A substrate processing system includes: an acquiring unit configured to acquire process data of each step when each step included in a predetermined process is executed under different control conditions; an extracting unit configured to divide each step into a first section in which the process data fluctuates and a second section in which the process data is converged, and extract first data belonging to the first section and second data belonging to the second section from the process data; and a monitoring unit configured to monitor the process data by comparing one or both of an evaluation value that evaluates the first data and an evaluation value that evaluates the second data with corresponding upper and lower limit values.

Abstract: An abnormality detection method includes: supplying a gas controlled to a selected rate to a gas supply pipe via the gas pipe connected to the gas supply pipe, thereby introducing the gas into a reaction region of a processing container provided in a processing apparatus from a gas hole of the gas supply pipe; measuring a pressure inside the gas pipe by a pressure gauge attached to the gas pipe; and detecting an abnormality of at least one of the gas supply pipe and the gas pipe based on the pressure measured at the measuring.

Abstract: A technique for improving uniformity in a plane of a substrate is provided. A substrate processing apparatus according an aspect of the present disclosure includes a processing container having a substantially cylindrical shape, a gas nozzle extending in a vertical direction along an inside of an inner wall of the processing container and forming a gas flow path therein, and a gas ejector provided on the processing container and communicating with the gas flow path, the gas ejector being configured to distribute a gas introduced from the gas nozzle and to eject the gas from an outer peripheral portion of the processing container.

Abstract: There is provided a vertical heat treatment apparatus for forming a film by supplying a precursor gas to a plurality of substrates that are held in a substantially horizontal posture on a substrate holder with a predetermined interval in a vertical direction. The apparatus includes a processing container including an inner tube accommodating the substrate holder and an outer tube that is disposed outside the inner tube; and a gas nozzle that extends vertically along an inner peripheral surface of the inner tube and has a distal end that penetrates from an inside of the inner tube to an outside of the inner tube. A first gas hole for supplying the precursor gas to the inside of the inner tube and a second gas hole for supplying the precursor gas to the outside of the inner tube are formed on the gas nozzle.

Abstract: A method of forming a blocking silicon oxide film on a target surface on which a silicon oxide film and a silicon nitride film are exposed, includes: placing a workpiece having the target surface on which the silicon oxide film and the silicon nitride film are exposed in a processing container under a depressurized atmosphere; forming a spacer polysilicon film to be a sacrificial film on the target surface on which the silicon oxide film and the silicon nitride film are exposed; and substituting the spacer polysilicon film with a substitution silicon oxide film by supplying thermal energy, oxygen radicals and hydrogen radicals onto the workpiece.

Abstract: A substrate processing system includes: an acquiring unit configured to acquire process data of each step when each step included in a predetermined process is executed under different control conditions; an extracting unit configured to divide each step into a first section in which the process data fluctuates and a second section in which the process data is converged, and extract first data belonging to the first section and second data belonging to the second section from the process data; and a monitoring unit configured to monitor the process data by comparing one or both of an evaluation value that evaluates the first data and an evaluation value that evaluates the second data with corresponding upper and lower limit values.

Abstract: There is provided a method of forming a predetermined film by alternately supplying a film-forming raw material gas and a reaction gas onto a workpiece by an atomic layer deposition (ALD), the method including: beginning an ALD-based film formation at a first temperature at which an adsorption of the film-forming raw material gas occurs; continuing the ALD-based film formation while increasing the first temperature; and completing the ALD-based film formation at a second temperature at which a decomposition of the film-forming raw material gas occurs.

Abstract: There is provided a method of forming a silicon oxide film on a target surface on which a silicon oxide film and a silicon nitride film are exposed. The method comprises placing a workpiece having the target surface on which the silicon oxide film and the silicon nitride film are exposed, in a processing container under a depressurized atmosphere; forming a spacer silicon nitride film to be a sacrificial film on the target surface on which the silicon oxide film and the silicon nitride film are exposed; and substituting the spacer silicon nitride film with a substitution silicon oxide film by supplying thermal energy, oxygen radicals and hydrogen radicals onto the workpiece.

Abstract: There is provided a method of forming a predetermined film by alternately supplying a film-forming raw material gas and a reaction gas onto a workpiece by an atomic layer deposition (ALD), the method including: beginning an ALD-based film formation at a first temperature at which an adsorption of the film-forming raw material gas occurs; continuing the ALD-based film formation while increasing the first temperature; and completing the ALD-based film formation at a second temperature at which a decomposition of the film-forming raw material gas occurs.

Abstract: There is provided a vertical heat treatment apparatus for forming a film by supplying a precursor gas to a plurality of substrates that are held in a substantially horizontal posture on a substrate holder with a predetermined interval in a vertical direction. The apparatus includes a processing container including an inner tube accommodating the substrate holder and an outer tube that is disposed outside the inner tube; and a gas nozzle that extends vertically along an inner peripheral surface of the inner tube and has a distal end that penetrates from an inside of the inner tube to an outside of the inner tube. A first gas hole for supplying the precursor gas to the inside of the inner tube and a second gas hole for supplying the precursor gas to the outside of the inner tube are formed on the gas nozzle.

Abstract: There is provided a method of forming a blocking silicon oxide film on a target surface on which a silicon oxide film and a silicon nitride film are exposed, including: placing a workpiece having the target surface on which the silicon oxide film and the silicon nitride film are exposed in a processing container under a depressurized atmosphere; forming a spacer polysilicon film to be a sacrificial film on the target surface on which the silicon oxide film and the silicon nitride film are exposed; and substituting the spacer polysilicon film with a substitution silicon oxide film by supplying thermal energy, oxygen radicals and hydrogen radicals onto the workpiece.

Abstract: There is provided a method of forming a silicon oxide film on a target surface on which a silicon oxide film and a silicon nitride film are exposed. The method comprises placing a workpiece having the target surface on which the silicon oxide film and the silicon nitride film are exposed, in a processing container under a depressurized atmosphere; forming a spacer silicon nitride film to be a sacrificial film on the target surface on which the silicon oxide film and the silicon nitride film are exposed; and substituting the spacer silicon nitride film with a substitution silicon oxide film by supplying thermal energy, oxygen radicals and hydrogen radicals onto the workpiece.

Abstract: A film formation method includes a film formation process for forming an SiO2 film on a surface of a target object inside a process container by use of an Si source gas and an oxidizing agent, and an oxidation purge process for performing oxidation on films deposited inside the process container while exhausting gas from inside the process container after unloading the target object from the process container, wherein the film formation process and the oxidation purge process are alternately repeated a plurality of times without, interposed therebetween, a process for removing the films deposited inside the process container.

Abstract: A film formation method includes a film formation process for forming an SiO2 film on a surface of a target object inside a process container by use of an Si source gas and an oxidizing agent, and an oxidation purge process for performing oxidation on films deposited inside the process container while exhausting gas from inside the process container after unloading the target object from the process container, wherein the film formation process and the oxidation purge process are alternately repeated a plurality of times without, interposed therebetween, a process for removing the films deposited inside the process container.