Abstract: The present invention provides a low-resistance magnetoresistive element of a spin-injection write type. A crystallization promoting layer that promotes crystallization is formed in contact with an interfacial magnetic layer having an amorphous structure, so that crystallization is promoted from the side of a tunnel barrier layer, and the interface between the tunnel barrier layer and the interfacial magnetic layer is adjusted. With this arrangement, it is possible to form a magnetoresistive element that has a low resistance so as to obtain a desired current value, and has a high TMR ratio.

Abstract: A topic net management unit 1 reads one record from a table to generate the topic net (S1). Subsequently, from among the field data in the record, the unit 1 generates nodes corresponding to the field data for which a corresponding topic class exists (S2). Topics corresponding to those nodes are generated. If a node having the same topic is already generated, then the unit 1 does not newly generate a node having a duplicate topic (S2). The unit 1 mutually links the generated topics in accordance with the definitions between the topic classes (S3). Further, using a dialog information template, the unit 1 generates dialog information associated with the generated link (S4). The unit 1 performs Steps S1-S4 processing for all records in the table (S5). If there is a plurality of tables Steps S1-S5 processing is performed for all tables (S6).

Abstract: The present invention provides a dialog system, a dialog execution method and a computer program which are capable of easily updating input information and output information of a dialog scenario and easily changing a plurality of modalities by using a general-purpose dialog scenario. In a dialog system that receives information from outside, controls the pursuit of dialog along the stored dialog scenario and outputs information along the dialog scenario to the outside, a dialog scenario written by using information for identifying the meaning of words/phrases used in the input information and the output information is stored, one or a plurality of words/phrases are stored in association with information for identifying the meaning of words/phrases, input information is analyzed, a corresponding word/phrase is extracted based on the derived information for identifying the meaning of words/phrases, and output information along a dialog scenario stored, based on the extracted word/phrase is outputted.

Abstract: An interactive control system is disclosed with which the recognition rate and the responsiveness when operating a plurality of interactive services in parallel can be improved. A recognition lexicon and consolidated and reorganized information are generated for each individual interaction. Thus, excessive growth of the recognition lexicon can be avoided and a lowering of the recognition rate can be prevented. Moreover, based on the consolidated and reorganized information, it is possible to specify interactive services that may respond to the same input information, so that responses that are unexpected for the user can be prevented.

Abstract: A magnetoresistive element which records information by supplying spin-polarized electrons to a magnetic material, includes a first pinned layer which is made of a magnetic material and has a first magnetization directed in a direction perpendicular to a film surface, a free layer which is made of a magnetic material and has a second magnetization directed in the direction perpendicular to the film surface, the direction of the second magnetization reversing by the spin-polarized electrons, and a first nonmagnetic layer which is provided between the first pinned layer and the free layer. A saturation magnetization Ms of the free layer satisfies a relationship 0?Ms<?{square root over ( )}{Jw/(6?At)}. Jw is a write current density, t is a thickness of the free layer, A is a constant.

Abstract: A magnetic memory includes a magnetoresistive effect device comprising: a first ferromagnetic layer that has magnetic anisotropy in a direction perpendicular to a film plane thereof; a first nonmagnetic layer that is provided on the first ferromagnetic layer; a first reference layer that is provided on the first nonmagnetic layer, has magnetic anisotropy in a direction perpendicular to a film plane thereof, has magnetization antiparallel to a magnetization direction of the first ferromagnetic layer, and has a film thickness that is 1/5.2 to 1/1.

Abstract: A magnetoresistive element which records information by supplying spin-polarized electrons to a magnetic material, includes a first pinned layer which is made of a magnetic material and has a first magnetization directed in a direction perpendicular to a film surface, a free layer which is made of a magnetic material and has a second magnetization directed in the direction perpendicular to the film surface, the direction of the second magnetization reversing by the spin-polarized electrons, and a first nonmagnetic layer which is provided between the first pinned layer and the free layer. A saturation magnetization Ms of the free layer satisfies a relationship 0?Ms<?{square root over ( )}{Jw/(6?At)}. Jw is a write current density, t is a thickness of the free layer, A is a constant.

Abstract: A view control system is communicably connected to a display device for displaying data in accordance with an information resource. The view control system includes a view control device. The view control device includes a regulation determiner, a view regulator, and a resource data sender. The regulation determiner determines whether to regulate visible output of the information resource. The view regulator associates regulatory data with the information resource upon determining to regulate visible output of the information resource. The resource data sender sends resource data including the information resource, associated regulatory data, and a message conveying that visible output of the information resource is regulated. Either the message or data generated in accordance with the information resource is sent to the display device.

Abstract: A magnetoresistive element includes a foundation layer, a first magnetic layer on the foundation layer, a tunnel barrier layer on the first magnetic layer, and a second magnetic layer on the tunnel barrier layer. The first magnetic layer is made of a ferromagnetic metal containing one or more elements selected from a first group consisting of Co, Fe, and Ni, and one or more elements selected from a second group consisting of Cu, Ag, Au, Pd, Pt, Ru, Rh, Ir, and Os. The foundation layer is made of a metal containing one or more elements selected from a third group consisting of Al, Ni, Co, Fe, Mn, Cr, and V.

Abstract: A magnetoresistive element includes an underlying layer having a cubic or tetragonal crystal structure oriented in a (001) plane, a first magnetic layer provided on the underlying layer, having perpendicular magnetic anisotropy, and having an fct structure oriented in a (001) plane, a non-magnetic layer provided on the first magnetic layer, and a second magnetic layer provided on the non-magnetic layer, and having perpendicular magnetic anisotropy. An in-plane lattice constant a1 of the underlying layer and an in-plane lattice constant a2 of the first magnetic layer satisfy the following equation in which b is a magnitude of Burgers vector of the first magnetic layer, ? is an elastic modulus of the first magnetic layer, and hc is a thickness of the first magnetic layer.

Abstract: A magnetoresistive element includes a free layer which contains a magnetic material and has an fct crystal structure with a (001) plane oriented, the free layer having a magnetization which is perpendicular to a film plane and has a direction to be changeable by spin-polarized electrons, a first nonmagnetic layer and a second nonmagnetic layer which sandwich the free layer and have one of a tetragonal crystal structure and a cubic crystal structure, and a fixed layer which is provided on only one side of the free layer and on a surface of the first nonmagnetic layer opposite to a surface with the free layer and contains a magnetic material, the fixed layer having a magnetization which is perpendicular to a film plane and has a fixed direction.

Abstract: A magneto-resistive element according to an aspect of the present invention includes a free layer whose magnetized state changes and a pinned layer whose magnetized state is fixed. The free layer comprises first and second ferromagnetic layers and a non-magnetic layer which is arranged between the first and second ferromagnetic layers. An intensity of exchange coupling between the first and second ferromagnetic layers is set so that an astroid curve in a hard axis direction opens.

Abstract: Products matching customer wishes are retrieved from among a large variety of merchandise. A topic net in which merchandise features from a customer's perspective are expressed is configured with needs information representing customer needs. Evaluation criteria for topic units are set in the topic net, and based on the needs information with which the topic net is configured, on the evaluation criteria, and on merchandise specifications, a combined suitability level indicating to what extent a product meets the customer's needs is calculated for each product. The product whose combined suitability level is highest may be surmised to be the product most befitting the customer's needs.

Abstract: A magneto-resistive element according to an aspect of the present invention includes a free layer whose magnetized state changes and a pinned layer whose magnetized state is fixed. The free layer comprises first and second ferromagnetic layers and a non-magnetic layer which is arranged between the first and second ferromagnetic layers. An intensity of exchange coupling between the first and second ferromagnetic layers is set so that an astroid curve in a hard axis direction opens.

Abstract: The present invention provides a low-resistance magnetoresistive element of a spin-injection write type. A crystallization promoting layer that promotes crystallization is formed in contact with an interfacial magnetic layer having an amorphous structure, so that crystallization is promoted from the side of a tunnel barrier layer, and the interface between the tunnel barrier layer and the interfacial magnetic layer is adjusted. With this arrangement, it is possible to form a magnetoresistive element that has a low resistance so as to obtain a desired current value, and has a high TMR ratio.

Abstract: A magnetoresistive element includes: a first magnetization reference layer having magnetization perpendicular to a film plane, a direction of the magnetization being invariable in one direction; a magnetization free layer having magnetization perpendicular to the film plane, a direction of the magnetization being variable; a first intermediate layer provided between the first magnetization reference layer and the magnetization free layer; a magnetic phase transition layer provided on an opposite side of the magnetization free layer from the first intermediate layer, the magnetic phase transition layer being magnetically coupled to the magnetization free layer, and being capable of bidirectionally performing a magnetic phase transition between an antiferromagnetic material and a ferromagnetic material; and an excitation layer provided on an opposite side of the magnetic phase transition layer from the magnetization free layer, and causing the magnetic phase transition layer to perform the magnetic phase transi

Abstract: A magnetoresistive element includes a first underlying layer having an NaCl structure and containing a nitride orienting in a (001) plane, a first magnetic layer provided on the first underlying layer, having magnetic anisotropy perpendicular to a film surface, having an L10 structure, and containing a ferromagnetic alloy orienting in a (001) plane, a first nonmagnetic layer provided on the first magnetic layer, and a second magnetic layer provided on the first nonmagnetic layer and having magnetic anisotropy perpendicular to a film surface.

Abstract: A navigation device includes a data transmission-reception portion for performing data transmission and reception with a portable terminal, an address list cooperation portion for receiving address list data, a schedule cooperation portion for receiving and managing schedule data, a candidate location specifying information recording portion for searching and extracting information for specifying a location corresponding to one schedule item from the address list data concerning a schedule indicated in schedule data to record the extracted information, a position specifying information obtaining portion for obtaining position specifying information for specifying a position on a map corresponding to each piece of candidate location specifying information, a selecting portion for selecting one position specifying information from position specifying information, and a path managing portion for determining a position of each destination on the path in accordance with the selected position specifying information

Abstract: It is made possible to provide a magnetoresistive effect element that can reverse magnetization direction with a low current, having low areal resistance (RA) and a high TMR ratio. A magnetoresistive effect element includes: a film stack that includes a magnetization free layer including a magnetic layer in which magnetization direction is changeable, a magnetization pinned layer including a magnetic layer in which magnetization direction is pinned, and an intermediate layer provided between the magnetization free layer and the magnetization pinned layer, the intermediate layer being an oxide containing boron (B) and an element selected from the group consisting of Ca, Mg, Sr, Ba, Ti, and Sc. Current is applied bidirectionally between the magnetization pinned layer and the magnetization free layer through the intermediate layer, so that the magnetization of the magnetization free layer is reversible.

Abstract: A magnetoresistive effect element includes a first magnetic layer, a second magnetic layer, and a first spacer layer. The first magnetic layer has an invariable magnetization direction. The second magnetic layer has a variable magnetization direction, and contains at least one element selected from Fe, Co, and Ni, at least one element selected from Ru, Rh, Pd, Ag, Re, Os, Ir, Pt, and Au, and at least one element selected from V, Cr, and Mn. The spacer layer is formed between the first magnetic layer and the second magnetic layer, and made of a nonmagnetic material. A bidirectional electric current flowing through the first magnetic layer, the spacer layer, and the second magnetic layer makes the magnetization direction of the second magnetic layer variable.