Patents by Inventor Eiji Kotani

Eiji Kotani has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device having darlington-connected transistor circuit
    Patent number: 4769560
    Abstract: An additional p-n junction diode, having a forward bias voltage smaller than a forward bias voltage between the base and emitter of a first-stage specific transistor of 3-stage Darlington connected npn transistors, is electrically connected in parallel between a p-type base layer and an n-type collector layer of the specific transistor. The polarities of the p-type and n-type layers of the diode are respectively the same as those of the parallel-connected p-type base and n-type collector layers of the specific transistor.
    Type: Grant
    Filed: February 12, 1987
    Date of Patent: September 6, 1988
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Keizo Tani, Junichi Nakao, Eiji Kotani