Abstract: Implementations of a method of forming semiconductor packages may include: providing a wafer having a plurality of devices, etching one or more trenches on a first side of the wafer between each of the plurality of devices, applying a molding compound to the first side of the wafer to fill the one or more trenches; grinding a second side of the wafer to a desired thickness, and exposing the molding compound included in the one or more trenches. The method may include etching the second side of the wafer to expose a height of the molding compound forming one or more steps extending from the wafer, applying a back metallization to a second side of the wafer, and singulating the wafer at the one or more steps to form a plurality of semiconductor packages. The one or more steps may extend from a base of the back metallization.

Abstract: Implementations of semiconductor packages may include: a semiconductor die having a first side and a second side; one or more bumps included on the first side of the wafer, the bumps comprising a first layer having a first metal and a second layer including a second metal. The first layer may have a first thickness and the second layer may have a second thickness. The semiconductor package may also have a mold compound encapsulating all the semiconductor die except for a face of the one or more bumps.

Abstract: Implementations of a method of forming a semiconductor package may include forming electrical contacts on a first side of a wafer, applying a photoresist layer to the first side of the wafer, patterning the photoresist layer, and etching notches into the first side of the wafer using the photoresist layer. The method may include applying a first mold compound into the notches and over the first side of the wafer, grinding a second side of the wafer opposite the first side of the wafer to the notches formed in the first side of the wafer, applying one of a second mold compound and a laminate resin to a second side of the wafer, and singulating the wafer into semiconductor packages. Six sides of each semiconductor package may be covered by one of the first mold compound, the second mold compound, and the laminate resin.

Abstract: A process of forming an electronic device including providing a substrate having a first surface and a second surface opposite the first surface; etching the substrate along the first surface to define a trench; forming a via within the trench; applying a tape including an adhesive to the first surface, wherein the adhesive of the tape is spaced apart from the first surface by a distance; and operating on the second surface of the substrate.

Abstract: The invention provides a semiconductor device and a method of automatically inspecting the appearance, which achieves proper recognition of the size of a chipping occurring from an end portion of the semiconductor device toward the element forming region by an automatic appearance inspection machine, and prevents a problem of judging an appearance non-defective product as an appearance defective product. A semiconductor device includes a resin layer extending from an element forming region over a guard ring surrounding the element forming region so as to cover these except a plurality of portions of the guard ring, and a chipping extending from a chip end portion of a semiconductor device toward the end portion of the resin layer.

Abstract: The invention prevents a conductive fuse blown out by laser trimming from reconnecting by a plating electrode in a plating process and prevents a plating solution etc from entering a fuse blowout portion. On a semiconductor substrate of a multilayered wiring structure including a fuse blowout groove formed by blowing out a conductive fuse by laser trimming in a trimming element forming region, a second protection layer is formed so as to cover the trimming element forming region and then a plating electrode is formed on an draw-out pad electrode made of a topmost metal wiring. A third protection layer is then formed so as to cover the semiconductor substrate including the second protection layer and have an opening on the plating electrode.

Abstract: The invention prevents a conductive fuse blown out by laser trimming from reconnecting by a plating electrode in a plating process and prevents a plating solution etc from entering a fuse blowout portion. On a semiconductor substrate of a multilayered wiring structure including a fuse blowout groove formed by blowing out a conductive fuse by laser trimming in a trimming element forming region, a second protection layer is formed so as to cover the trimming element forming region and then a plating electrode is formed on an draw-out pad electrode made of a topmost metal wiring. A third protection layer is then formed so as to cover the semiconductor substrate including the second protection layer and have an opening on the plating electrode.

Abstract: The invention provides a semiconductor device and a method of automatically inspecting the appearance, which achieves proper recognition of the size of a chipping occurring from an end portion of the semiconductor device toward the element forming region by an automatic appearance inspection machine, and prevents a problem of judging an appearance non-defective product as an appearance defective product. A semiconductor device includes a resin layer extending from an element forming region over a guard ring surrounding the element forming region so as to cover these except a plurality of portions of the guard ring, and a chipping extending from a chip end portion of a semiconductor device toward the end portion of the resin layer.