Abstract: Provided are a process for producing a glass substrate usable for low-temperature p-SiTFT substrates directly in accordance with a down draw method, and the glass substrate obtained by the process. The process for producing a glass substrate includes a forming step of forming a molten glass into a ribbon shape in accordance with a down draw method, an annealing step of annealing the glass ribbon, and a cutting step of cutting the glass ribbon to give a glass substrate, in which, in the annealing step, an average cooling rate from the annealing point to the (annealing point ?50° C.) is lower than an average cooling rate from the (annealing point +100° C.) to the annealing point.

Abstract: Provided are a process for producing a glass substrate usable for low-temperature p-SiTFT substrates directly in accordance with a down draw method, and the glass substrate obtained by the process. The process for producing a glass substrate includes a forming step of forming a molten glass into a ribbon shape in accordance with a down draw method, an annealing step of annealing the glass ribbon, and a cutting step of cutting the glass ribbon to give a glass substrate, in which, in the annealing step, an average cooling rate from the annealing point to the (annealing point?50° C.) is lower than an average cooling rate from the (annealing point+100° C.) to the annealing point.

Abstract: Provided are a process for producing a glass substrate usable for low-temperature p-SiTFT substrates directly in accordance with a down draw method, and the glass substrate obtained by the process. The process for producing a glass substrate includes a forming step of forming a molten glass into a ribbon shape in accordance with a down draw method, an annealing step of annealing the glass ribbon, and a cutting step of cutting the glass ribbon to give a glass substrate, in which, in the annealing step, an average cooling rate from the annealing point to the (annealing point ?50° C.) is lower than an average cooling rate from the (annealing point +100° C.) to the annealing point.

Abstract: A sensor mounting mechanism for a clutch case is provided, which can not only prevent temperature rise of a sensor but also simplify mounting of the sensor on the clutch case. The sensor mounting mechanism is for a clutch case which houses a clutch and a detection object (a pulse gear) rotating with the clutch in unison. A sensor for detecting a rotation of the detection object is inserted through a hole made on the clutch case with a thermal insulator (spacer) and a detector of the sensor is oriented opposite to the detection object.

Abstract: A sensor mounting mechanism for a clutch case is provided, which can not only prevent temperature rise of a sensor but also simplify mounting of the sensor on the clutch case. The sensor mounting mechanism is for a clutch case which houses a clutch and a detection object (a pulse gear) rotating with the clutch in unison. A sensor for detecting a rotation of the detection object is inserted through a hole made on the clutch case with a thermal insulator (spacer) and a detector of the sensor is oriented opposite to the detection object.