Patents by Inventor Eiji Nagasawa

Eiji Nagasawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4558507
    Abstract: The present invention relates to a method of forming a diffused region with a shallow junction having a refractory metal silicide layer thereon. At first, the refractory metal silicide layer is selectively formed on a silicon substrate of one conductivity type. An insulating film is then formed at least on the refractory metal silicide layer, and a contact hole is opened on a part of the silicide layer. After necessary high temperature treatments have been conducted, a dopant impurity of the opposite conductivity type is introduced from the contact hole to the silicide layer. The impurity is laterally dispersed in the silicide layer and diffused into the whole portion of the silicon substrate in contact with the silicide layer, whereby the diffused region with a shallow junction can be formed.
    Type: Grant
    Filed: November 10, 1983
    Date of Patent: December 17, 1985
    Assignee: NEC Corporation
    Inventors: Hidekazu Okabayashi, Mitsutaka Morimoto, Eiji Nagasawa
  • Patent number: 4551908
    Abstract: A process of forming electrodes and interconnections in a silicon semiconductor device comprises the steps of forming an insulating film on a silicon substrate, defining an opening in the insulating film, depositing a layer of metal having a high melting point on the insulating film, implanting ions to mix an interface between the metal layer and the silicon substrate, heating the construction in a temperature in the range of from 400 to 650 degrees Celsius to form a silicide of the metal layer in the opening, and selectively etching away an unreacted metal layer so as to self-align the silicide metal layer with the opening. The silicide metal layer is then annealed in a non-reducing gas atmosphere at a temperature ranging from 800 to 1,100 degrees Celsius.
    Type: Grant
    Filed: October 2, 1984
    Date of Patent: November 12, 1985
    Assignee: Nippon Electric Co., Ltd.
    Inventors: Eiji Nagasawa, Hidekazu Okabayashi, Mitsutaka Morimoto, Kohei Higuchi
  • Patent number: 3932881
    Abstract: A light source having an infrared-emitting diode and a luminescent material excitable in a step-like manner for converting the infrared radiation to visible rays comprises an optical cavity enclosing the luminescent material. A portion of the cavity wall is a dichroic filter that is substantially transparent to the visible rays but reflects the infrared radiation. The other cavity wall reflect the infrared radiation in particular.
    Type: Grant
    Filed: March 7, 1975
    Date of Patent: January 13, 1976
    Assignee: Nippon Electric Co., Inc.
    Inventors: Yoh Mita, Eiji Nagasawa