Abstract: A gate electrode is formed in the following manner. A first resist layer having a first opening is formed on a semiconductor substrate. A second resist layer having a second opening larger than the first opening is formed on the first resist layer. A first conductor layer containing a high-melting-point metal is formed. Subsequently, a second conductor layer containing low-resistance metal is formed, and then the first conductor layer within the second opening is removed by etching. Next, the second resist layer is removed by a lift-off process, and finally the first resist layer is removed by ashing.

Abstract: A fine electrode-forming masking member for forming fine gate electrodes, which can decrease gate length of a gate electrode of a field effect transistor. The method includes forming a first masking member having penetrating portions formed into opening patterns in conformity with the fine gate electrodes, on a semiconductor substrate using a photosensitive resin; and heating the first masking member so that parts of sidewalk in contact with the substrate of the penetrating portions flow along the semiconductor substrate to form extension portions. Accordingly, the widths of the penetrating portions at the bottom surface side are decreased so as to form the opening patterns. Gate electrodes are formed on regions of the semiconductor substrate exposed through the opening patterns while the substrate is masked with the fine electrode-forming masking member.

Abstract: A gate electrode is formed in the following manner. A first resist layer having a first opening is formed on a semiconductor substrate. A second resist layer having a second opening larger than the first opening is formed on the first resist layer. A first conductor layer containing a high-melting-point metal is formed. Subsequently, a second conductor layer containing low-resistance metal is formed, and then the first conductor layer within the second opening is removed by etching. Next, the second resist layer is removed by a lift-off process, and finally the first resist layer is removed by ashing.

Abstract: A method for manufacturing a fine electrode-forming masking member for forming fine gate electrodes, which is effectively used to decrease a gate length of a gate electrode of a field effect transistor. The method includes forming a first masking member having penetrating portions formed into opening patterns in conformity with the fine gate electrodes, on a semiconductor substrate using a photosensitive resin; and performing heat treatment of the first masking member so that parts of sidewalls, which are in contact with the substrate, of the penetrating portions formed in the first masking member, are caused by the heat treatment to flow along the semiconductor substrate to form extension portions. Accordingly, the widths of the penetrating portions at the bottom surface side are decreased so as to form the opening patterns.