Abstract: A magnetic sensing element comprising a composite film having a center portion and two side portions, a second antiferromagnetic layer, a chromium nonmagnetic layer, and third antiferromagnetic layers is provided. The composite film comprises a first antiferromagnetic layer; a pinned magnetic layer on the first antiferromagnetic layer; a nonmagnetic material layer on the pinned magnetic layer; and a free magnetic layer on the nonmagnetic material layer. The second antiferromagnetic layer is disposed on the free magnetic layer. The chromium nonmagnetic layer is disposed on the second antiferromagnetic layer at the center portion. The third antiferromagnetic layers are disposed on the second antiferromagnetic layer at the two side portions. The magnetization direction in the two side portions of the free magnetic layer is pinned in the track width direction and the magnetization direction in the center portion is rotatable in response to external magnetic fields.

Abstract: First electrode layers are formed on second antiferromagnetic layers, and in a step separate from the above, second electrode layers are formed above internal end surfaces of the second antiferromagnetic layers and the first electrode layers and parts of the upper surface of the multilayer film with an additional film provided therebetween. Since the first and the second electrode layers are formed separately, it is not necessary to perform mask alignment twice, and hence an overlap structure can be precisely formed in which the thickness of the second electrode layer at the left side is equivalent to that at the right side.

Abstract: Changes of the direction of magnetization at the central region of the free magnetic layer is facilitated by using a layer comprising a magnetic material having a small exchange stiffness constant such as the NiFe layer comprising the NiaFeb alloy (a and b are represented in at %, and satisfy the relation of a>80 and a+b=100) and NiFeX layer (X is at least one element selected from Mn, Cu, Zn, Ti, Al, Ge, Si, Cr, V, Sn, Ir, Ru, Nb, Sb, W, Mo, Os and Ta) for the magnetic material layer of the free magnetic layer.

Abstract: A method for manufacturing magnetic sensing elements for use in magnetic sensors and hard disks. A ferromagnetic layer and a second antiferromagnetic layer are deposited on a nonmagnetic layer having a uniform thickness. The second antiferromagnetic layer is milled to form an indent. The resulting magnetic sensing element has a free magnetic layer reliably set in a single-magnetic-domain state in the track width direction.

Abstract: A thin-film electrode layer having a superior electromigration resistance is disclosed. The thin-film electrode layer includes a first base layer composed of &bgr;-Ta, a main conductive layer composed of Au, and a protective layer. The protective layer is a composite of a Cr sublayer and an &agr;-Ta sublayer. A thin-film magnetic head having the thin-film electrode layers and a method for forming electrodes in the thin-film magnetic head are also disclosed.

Abstract: A first magnetic layer includes an area which contains an element X (e.g., Cr) and is present in position toward the side of a nonmagnetic intermediate layer from the side near an opposite surface of the first magnetic layer away from an interface between the first magnetic layer and the nonmagnetic intermediate layer, and an area which is partly located in a region from the interface between the first magnetic layer and the nonmagnetic intermediate layer toward the opposite surface of the first magnetic layer and which does not contain the element X. Such an arrangement is able to improve a resistance change rate, to increase a coupling magnetic field based on the RKKY interaction, and to realize satisfactory control of magnetization of a free magnetic layer.

Abstract: A nonmagnetic layer comprising Ru formed on a free magnetic layer, wherein a ferromagnetic layer and a second antiferromagnetic layer are formed on each outer side of the nonmagnetic layer. A ferromagnetic coupling is effectively generated between the ferromagnetic layer and each outer sideof the free magnetic layer. Magnetization of the free magnetic layer is adequately controlled by the ferromagnetic coupling without damaging each outer sideof the free magnetic layer to allow manufacture of a magnetic sensing element capable of properly defining a narrow track width.

Abstract: A magnetic detection device and a manufacturing method for the same that allows effective control of the magnetization of a free magnetic layer in a design with narrower tracks. A second antiferromagnetic layer is deposited on a free magnetic layer, and a thin nonmagnetic layer formed from an element such as Ru or the like is deposited on the second antiferromagnetic layer. Third antiferromagnetic layers are deposited on both end portions of the free magnetic layer. Both end portions of the second antiferromagnetic layer exhibit antiferromagnetic properties so that the magnetization of both end portions of the free magnetic layer is firmly fixed. A central portion of the second antiferromagnetic layer is non-antiferromagnetic. A central portion of the free magnetic layer is formed into a weak single domain so it permits inverted magnetization in response to an external magnetic field.

Abstract: By forming insulating layers on two sides of a laminate, forming a free magnetic layer continuously on the laminate and the insulating layers, and placing the free magnetic layer in a single magnetic domain by an exchange bias method, reproducing output and changing rate of resistance of a CPP type magnetic sensor can be improved even when recording density is increased in the future.

Abstract: Ferromagnetic layers and a free magnetic layer are laminated with a nonmagnetic layer therebetween, the nonmagnetic layer having a uniform thickness, the magnetization direction of the ferromagnetic layers being aligned in the track width direction by second antiferromagnetic layers. Thereby, the free magnetic layer can be aligned in a single domain state in the track width direction reliably.

Abstract: A thin-film magnetic head is provided, in which, even if sags occur in a shield layer when an opposing face opposing a medium is polished, the sags are unlikely to reach an MR device or another shield layer, whereby short-circuiting can be avoided. The thin-film magnetic head includes a laminate having a magnetoresistive device, two insulating layers provided on both sides of the magnetoresistive device in the thickness direction thereof, and two shield layers provided on the insulating layers on the magnetoresistive device, and a substrate on which the laminate is provided. In the thin-film magnetic head, the magnetoresistive device, the insulating layers, and the shield layers are exposed at the opposing face opposing a recording medium. At least one of the shield layers in contact with the insulating layers is composed of a magnetic layer and a rigid layer which is harder than the magnetic layer and is in contact with the insulating layer.

Abstract: In a CPP-type magnetic sensing element, a free magnetic layer includes at least two magnetic sublayers and an intermediate sublayer placed between the two adjacent magnetic sublayers, and thus the free magnetic layer is in a synthetic ferrimagnetic state. Since the physical thickness of the free magnetic layer can be increased and the resultant magnetic moment can be decreased, the bulk scattering effect is satisfactorily displayed and the magnetization of the free magnetic layer varies satisfactorily in response to en external magnetic field, resulting in an increase in the read output.

Abstract: A-magnetic sensing element includes a laminate, the laminate including a first antiferromagnetic layer; a pinned magnetic layer, the magnetization direction thereof being pinned by the first antiferromagnetic layer; a nonmagnetic conductive layer; a free magnetic layer, the magnetization direction thereof being variable in response to an external magnetic field; a nonmagnetic interlayer; a ferromagnetic layer; and a second antiferromagnetic layer. The laminate has a recess extending through the second antiferromagnetic layer and the ferromagnetic layer, a bottom face of the recess lying in the nonmagnetic interlayer, the width of the bottom face in a track width direction being equal to a track width. The free magnetic layer is magnetized in a direction substantially orthogonal to the magnetization direction of the pinned magnetic layer as a result of magnetic coupling with the ferromagnetic layer. A method for making such a magnetic sensing element is also disclosed.

Abstract: In a method for manufacturing a magnetic field sensing element including an electrode layer overlying a second antiferrogmagnetic layer and a first free magnetic layer where the electrode layer exposes a portion of the second magnetic layer, a portion of the second antiferromagnetic layer not covered with the electrode layer and a portion of the first free magnetic layer are removed using the electrode layer as a mask after laminating each layer to form a bottom type spin-valve thin film magnetic element, thereby enabling the first free magnetic layer to be endowed with a sufficient exchange coupling magnetic field by substantially eliminating the tapered portion of the remaining second antiferromagnetic layer thereby enabling the magnetization of the second free magnetic layer to be put into a single domain state.

Abstract: A longitudinal bias layer is laminated above a free magnetic layer with a nonmagnetic layer provided therebetween so that the magnetization direction of the free magnetic layer is oriented by RKKY interaction with the longitudinal bias layer. The RKKY interaction exerts only between the longitudinal bias layer and the regions of the free magnetic layer which are located directly below both ends D of the longitudinal bias layer. Therefore, a thin film magnetic element can be provided, in which the width dimension of a recess formed in the longitudinal bias layer coincides with the magnetic track width.

Abstract: A magnetoresistive element exhibiting good external magnetic field detection characteristics is provided. The magnetoresistive element includes a laminate comprising a nonmagnetic conductive layer, first and second ferromagnetic layer sandwiching the nonmagnetic conductive layer, and a first antiferromagnetic layer 2 for pinning the magnetization direction of the first ferromagnetic layer, deposited on the face of the first ferromagnetic layer opposite the face in contact with the nonmagnetic conductive layer. Bias layers for applying a bias magnetic field to the second ferromagnetic layer is provided respectively on two ends of the laminate. Each bias layer comprises second and third antiferromagnetic layers and a third ferromagnetic layer sandwiched by the second and third antiferromagnetic layers so as to magnetically couple with the second and third antiferromagnetic layer. Two end faces of the second ferromagnetic layer come into contact with the third ferromagnetic layer.

Abstract: The present invention provides a spin-valve type thin film magnetic element that is able to certainly align the magnetization direction of the free magnetic layer in one direction by improving the exchange coupling magnetic field generated between the bias layers and ferromagnetic layer, and is able to reduce the thickness of the bias layer to be smaller than the thickness of the bias layer of the conventional spin-valve type thin film magnetic element for obtaining the same magnitude of the exchange coupling magnetic layer as that in the conventional spin-valve type thin film magnetic element.

Abstract: A thin film magnetic head includes an upper core layer and a lower core layer which are made of an Fe—M—O alloy, an Fe—M—T—O alloy or an NI—Fe—X alloy so that the upper core layer has a high saturation magnetic flux density, low coercive force and high resistivity, and the lower core layer has a lower saturation magnetic flux density than the upper core layer, low coercive force, high resistivity, and a low magnetostriction constant. Also the lower core layer is formed so that the thickness gradually decreases toward both side ends, and a gap layer can be formed on the lower core layer to have a uniform thickness. Since the lower core layer is formed by sputtering, a material having excellent soft magnetic material can be used, thereby enabling recording at high frequency.

Abstract: A thin film magnetic head includes an upper core layer and a lower core layer which are made of an Fe--M--O alloy, an Fe--M--T--O alloy or an NI--Fe--X alloy so that the upper core layer has a high saturation magnetic flux density, low coercive force and high resistivity, and the lower core layer has a lower saturation magnetic flux density than the upper core layer, low coercive force, high resistivity, and a low magnetostriction constant. Also the lower core layer is formed so that the thickness gradually decreases toward both side ends, and a gap layer can be formed on the lower core layer to have a uniform thickness. Since the lower core layer is formed by sputtering, a material having excellent soft magnetic material can be used, thereby enabling recording at high frequency.

Abstract: In a magnetic film forming method, a plurality of chips formed of Fe.sub.3 O.sub.4 and a plurality of chips formed of HfO.sub.2 are disposed on a target formed of Fe. The composition ratio of a Fe--Hf--O film can be set within a proper range by adjusting the numbers of the up said two kind of chips.