Abstract: For coincidence determination, a PET device that regards and counts a pair of annihilation radiations detected within a predetermined time as occurring from the same nuclide changes a coincidence time width according to a maximum detection time difference. This prevents the inclusion of extra noise data for improved image quality.

Abstract: In a coincidence determination processing of a PET device for regarding and counting a pair of annihilation radiations detected within a predetermined time as occurring from the same nuclide, a priority of a line of response to acquire is set and a true coincidence is extracted from multiple coincidences by using information on a detection time difference if a plurality of coincidences are detected with the predetermined time. Consequently, a true coincidence is extracted from multiple coincidences which have heretofore been discarded. This improves detection sensitivity at high radioactive concentration and contributes to an improved dynamic range.

Abstract: A polarization state of a transmission signal can be changed at a high speed based on a symbol-rate By switching a first switch, a second switch, and a third switch with time, one of an X-polarized wave_I-signal as a Y-polarized wave_I-signal, a signal caused by performing logical inversion for an X-polarized wave_I-signal, an X-polarized wave_Q-signal and a signal caused by logical inversion for an X-polarized wave_Q-signal is input to a second modulator. Further, by switching the first switch, the second switch and the third switch with time, the second modulator is input one of the X-polarized wave_I-signal as the Y-polarized wave_Q-signal, the X-polarized wave_I-signal, the signal caused by performing logical inversion for the X-polarized wave_I-signal, the X-polarized wave_Q-signal and the signal caused by performing logical inversion for the X-polarized wave_Q-signal. Thereby, a polarization state of a transmission signal can be changed at high speed based on a symbol-rate speed.

Abstract: A semiconductor device includes a first device isolation insulating film formed in a semiconductor substrate, a first well having a first conductivity type, defined by the first device isolation insulating film, and shallower than the first device isolation insulating film, a second device isolation insulating film formed in the first well, shallower than the first well, and defining a first part of the first well and a second part of the first well, a gate insulating film formed above the first part, a gate electrode formed above the gate insulating film, and an interconnection electrically connected to the second part of the first well and the gate electrode, wherein an electric resistance of the first well in a first region below the second device isolation insulating film is lower than an electric resistance of the first well in a second region other than the first region on the same depth level.

Abstract: A semiconductor device is provided that forms a three-dimensional semiconductor device having semiconductor devices stacked on one another. In this semiconductor device, a hole is formed in a silicon semiconductor substrate that has an integrated circuit unit and an electrode pad formed on a principal surface on the outer side. The hole is formed by etching, with the electrode pad serving as an etching stopper layer. An embedded electrode is formed in the hole. This embedded electrode serves to electrically lead the electrode pad to the principal surface on the bottom side of the silicon semiconductor substrate.

Abstract: An imaging device, or a PET device, opposed gamma camera type PET device, or open PET device in particular, that is combined with a radiation therapy device, in which detectors are rotated to reduce incidence of nuclear fragments on the detectors. For example, in an opposed gamma camera type PET device, beam irradiation and detector rotation can be synchronized to prevent the detectors from interfering with the treatment beam and reduce the incidence of nuclear fragments on the detectors. This makes it possible to reduce the incidence of nuclear fragments on the detectors without interfering with a treatment beam, thereby enabling measurement of annihilation radiations and three-dimensional imaging of the irradiation field immediately after irradiation or during irradiation.

Abstract: An optical signal transmitter of the present invention includes: two phase modulating portions; a phase shifter which displaces carrier phases of two output lights from the phase modulating portions by ?/2; a multiplexing portion which multiplexes two signal lights, carrier phases of the two signal lights being made orthogonal to each other by the phase shifter; a drive signal electrode portion which supplies a differential data signal to each of four paths of interference optical waveguides, each of the two phase modulating portions having the interference optical waveguides, the differential data signal having an amplitude which is equal to a half-wave voltage V? of the two phase modulating portions; a drive amplifier which amplifies the differential data signal to be supplied to each of the four paths of the interference optical waveguides; a data bias electrode portion which supplies a total of four data bias voltages to two arms, each of the two phase modulating portions having the two arms; an orthogona

Abstract: Upon detection of radiation by using a (three-dimensional) detector capable of distinguishing a detection position in a depth direction and energy, an energy window for distinguishing between a signal and noise is changed depending on the detection position in the depth direction, thus making it possible to obtain scattering components inside the detector. Alternatively, a weight is given to a detection event depending on the detection position in the depth direction and energy information to obtain scattering components inside the detector. Thereby, scattering components inside the detector can be obtained to increase the sensitivity of the detector. In this case, different detecting elements can be used depending on the detection position in the depth direction.

Abstract: A semiconductor device production method includes: forming a semiconductor region including a first region, a second region connecting with the first region and having a width smaller than that of the first region, and a third region connecting with the second region and having a width smaller than that of the second region; forming a gate electrode including a first part crossing the third region and a second part extending from the first part across the first region; forming a side wall insulation film on the gate electrode to cover part of the second region while exposing the remaining part of the second region; implanting a second conductivity type impurity into the first region and the remaining part of the second region; performing heat treatment; removing part of the side wall insulation film, and forming a silicide layer on the first region and the remaining part of the second region.

Abstract: A frequency domain multiplexed signal receiving method which decodes received signals that are multiplexed in a frequency domain, includes: a digital signal acquisition step of acquiring digital signals from the received signals that are multiplexed in the frequency domain; an offset discrete Fourier transform step of applying an offset discrete Fourier transform to odd discrete point numbers based on the acquired digital signals; and a decode step of decoding frequency domain digital signals in the frequency domain obtained by the offset discrete Fourier transform, and that are the frequency domain digital signals of one or more frequency channels.

Abstract: In order to compensate for chromatic dispersion caused by optical fiber transmission in a communication system with coherent detection using optical signals, specific frequency band signals are used to enable estimation of a chromatic dispersion value.

Abstract: To enable signal position detection, frequency offset compensation, clock offset compensation, and chromatic dispersion amount estimation in a communication system based on coherent detection using an optical signal, even on a signal having a great offset in an arrival time depending on a frequency due to chromatic dispersion. An optical signal transmitting apparatus generates specific frequency band signals having power concentrated on two or more specific frequencies and transmits a signal including the specific frequency band signals. An optical signal receiving apparatus converts a received signal into a digital signal, detects positions of the specific frequency band signals from the converted digital signal, estimates frequency positions of the detected specific frequency band signals, and detects a frequency offset between an optical signal receiving apparatus and an optical signal transmitting apparatus.

Abstract: A semiconductor device includes a silicon substrate; an element isolation region; an element region including a first well; a contact region; a gate electrode extending from the element region to a sub-region of the element isolation region between the element region and the contact region; a source diffusion region; a drain diffusion region; a first insulating region contacting a lower end of the source diffusion region; a second insulating region contacting a lower end of the drain diffusion region; and a via plug configured to electrically connect the gate electrode with the contact region. The first well is disposed below the gate electrode and is electrically connected with the contact region via the silicon substrate under the sub-region. The lower end of the element isolation region except the sub-region is located lower than the lower end of the first well.

Abstract: A seat slide device includes: a lower rail fixed to a vehicle body; an upper rail fixed to a seat and slidably fit into the lower rail; a lock member including an engaging portion that is engageable with an engaged portion of the lower rail for allowing the upper rail to be fixed to the lower rail; a biasing member for displacing the lock member such that the engaging portion is engaged with the engaged portion; a tilting member tiltably supported by the upper rail in contact with the lock member and tiltable in a predetermined direction for displacing the lock member so as to disengage the engaging portion from the engaged portion against a biasing force of the biasing member; and a contact portion being in frictional contact with the upper rail to allow a frictional force to act on the lock member.

Abstract: The present invention relates to an optical receiver, in which the transmittance of a Mach-Zehnder interferometer can be locked at a normal operation point in a simple structure and control. A transmittance detecting circuit and a minute modulation signal detecting circuit are provided in parallel after a balanced optical receiver, and a switch is selectively connectable either a minute modulation signal detecting circuit and a transmittance detecting circuit. In the initial stage of frequency pull-in, the switch is set to connect the transmittance detecting circuit to the synchronous detection circuit. If the transmittance detecting circuit detects that the transmittance of the Mach-Zehnder interferometer at the carrier frequency becomes a desired transmittance, the connection of the switch is switched from the transmittance detecting circuit to the minute modulation signal detecting circuit.

Abstract: This aims to provide a DOI type radiation detector in which scintillation crystals arranged two-dimensionally on a light receiving surface to form rectangular section groups in extending directions of the light receiving surface of a light receiving element are stacked up to make a three-dimensional arrangement and responses of the crystals that have detected radiation are made possible to identify at response positions on the light receiving surface, so that a three-dimensional radiation detection position can be obtained. In the DOI type radiation detector, scintillation crystals are right triangle poles extending upwards from the light receiving surface and the response positions on the light receiving surface are characterized. With this structure, DOI identification of a plurality of layers can be carried out by simply performing an Anger calculation of a light receiving element signal.

Abstract: A semiconductor device is provided that forms a three-dimensional semiconductor device having semiconductor devices stacked on one another. In this semiconductor device, a hole is formed in a silicon semiconductor substrate that has an integrated circuit unit and an electrode pad formed on a principal surface on the outer side. The hole is formed by etching, with the electrode pad serving as an etching stopper layer. An embedded electrode is formed in the hole. This embedded electrode serves to electrically lead the electrode pad to the principal surface on the bottom side of the silicon semiconductor substrate.

Abstract: A connection terminal includes a frame body including first and second support parts positioned to face each other; and a third support part having first and second ends connected to an end of the first support part and an end of the second support part, respectively; first elastic contact pieces provided on the first support part on a first side from which a terminal is to be inserted and having respective first contact parts configured to contact a peripheral surface of the terminal; second elastic contact pieces provided on the second support part on the first side and having respective second contact parts configured to contact the peripheral surface of the terminal and positioned to face the first contact parts; and a third elastic contact piece provided on the frame body on a second side opposite to the first side and configured to contact an end portion of the terminal.

Abstract: A semiconductor device is provided that forms a three-dimensional semiconductor device having semiconductor devices stacked on one another. In this semiconductor device, a hole is formed in a silicon semiconductor substrate that has an integrated circuit unit and an electrode pad formed on a principal surface on the outer side. The hole is formed by etching, with the electrode pad serving as an etching stopper layer. An embedded electrode is formed in the hole. This embedded electrode serves to electrically lead the electrode pad to the principal surface on the bottom side of the silicon semiconductor substrate.

Abstract: A light receiver for detecting incident time is installed on the side of a radiation source of a scintillator (including a Cherenkov radiation emitter), and information (energy, incident time, an incident position, etc.) on radiation made incident into the scintillator is obtained by the output of the light receiver. It is, thereby, possible to identify an incident position and others of radiation into the scintillator at high accuracy.