Abstract: Provided is an azo compound represented by formula (1A). L1 and L2 each represent a divalent linking group or a single bond. y represents 1 or 2. p and q each represent 0 or 1, and at least one of p and q is 1. X represents an oxygen atom or NR5, and R5 represents a hydrogen atom or an aliphatic hydrocarbon group. R12, R13, and R14 each represent an aliphatic hydrocarbon group or the like, and may each have a polymerizable group. Q represents a single bond or a group selected from the group consisting of —OC(?O)—, —C(?O)O—, —C?C—, —CH?CH—, —N?N—, —NHC(?O)—, and —C(?O)NH—. Ar1, Ar2, and Ar3 each represent a 1,4-phenylene group or a divalent sulfur-containing aromatic heterocyclic group. When y is 2, two Ar3s may be the same or different.

Abstract: Provided is a novel semiconductor material. A compound represented by the following formula (I): A1-B1-A1 (I) (In the formula (I), A1 represents an electron-withdrawing group, B1 is a divalent group including two or more constituent units that are linked by a single bond to constitute a ?-conjugated system, at least one of the two or more constituent units is a first constituent unit represented by the following formula (II), and the remaining second constituent unit other than the first constituent unit is a divalent group including an unsaturated bond, an arylene group, or a heteroarylene group.) (In the formula (II), Ar1, Ar2, Y, and R are as defined in the specification.).

Abstract: The present application provides a semiconductor pressure sensor having high manufacturing stability and high accuracy. A second silicon substrate is bonded across an oxide film to one main face of a first silicon substrate, in which a recessed portion that becomes a reference pressure chamber and an alignment mark are formed, whereby the first silicon substrate and the second silicon substrate are joined in a state wherein the recessed portion and the alignment mark are covered by the second silicon substrate. The alignment mark is detected using an infrared sensor, positioning is carried out using the alignment mark, and a gauge resistor, which is a pressure-sensitive element portion, is formed in a diaphragm formed in the second silicon substrate positioned above the recessed portion.

Abstract: In a semiconductor pressure sensor element, a first hydrogen permeation protection film is provided on a principal surface side of a first silicon substrate, and a second hydrogen permeation protection film is provided on a principal surface side of a second silicon substrate. The permeation paths of the hydrogen fluxes shown by the arrows A and B in FIG. 9 are blocked by the films. Also, a trench surrounding a reference pressure chamber is provided, and the first hydrogen permeation protection film and a third hydrogen permeation protection film are joined at the bottom portion of the trench, thereby blocking the permeation path of the hydrogen flux shown by the arrow C in FIG. 9. Furthermore, by providing a hydrogen storage chamber, hydrogen is trapped before the hydrogen reaches the reference pressure chamber.

Abstract: A semiconductor pressure sensor includes: a first semiconductor substrate having a plurality of recesses formed thereon; an intermediate semiconductor substrate joined to the first semiconductor substrate with a first oxide film interposed therebetween; a second semiconductor substrate joined to the intermediate semiconductor substrate with a second oxide film interposed therebetween; a first reference pressure chamber formed as a space surrounded by a first recess of the first semiconductor substrate and the intermediate semiconductor substrate; a second reference pressure chamber formed as a space surrounded by a second recess formed on the first semiconductor substrate, the intermediate semiconductor substrate, and the second semiconductor substrate, the intermediate semiconductor substrate having a through hole communicating with the second recess of the first semiconductor substrate; and piezoresistors formed on a surface of the second semiconductor substrate that receives pressure, along outer peripheri

Abstract: Provided is a semiconductor pressure sensor that can maintain high reliability and measure pressure with high accuracy without increasing the size thereof and that has hydrogen permeation prevention performance. The semiconductor pressure sensor includes: a first semiconductor substrate having a recess formed thereon; a second semiconductor substrate joined to the first semiconductor substrate with an oxide film interposed therebetween; a reference pressure chamber formed as a space surrounded by the recess of the first semiconductor substrate and the second semiconductor substrate; a piezoresistor formed on a surface of the second semiconductor substrate that receives pressure, along an outer periphery of the reference pressure chamber; and a protective film formed on the surface of the second semiconductor substrate that receives pressure, and side surfaces of the second semiconductor substrate and the oxide film.

Abstract: A photosensitive composition comprising a polymer compound composed of a repeating unit represented by the following formula (1) and at least one repeating unit selected from the group consisting of a repeating unit represented by the following formula (2), a repeating unit represented by the following formula (3) and a repeating unit represented by the following formula (4), and a compound having at least two azide groups: In the formula (1), Ar1 represents a phenyl group or a naphthyl group, and in the formula (2), Ar2 represents a phenyl group or a naphthyl group. l, m, n1 and n2 are numbers satisfying l?15 and m+n1+n2=100-l, and 1+n2?10 when the total amount of all repeating units contained in the above-described polymer compound is taken as 100.

Abstract: A semiconductor pressure sensor includes: a first semiconductor substrate having a plurality of recesses formed thereon; an intermediate semiconductor substrate joined to the first semiconductor substrate with a first oxide film interposed therebetween; a second semiconductor substrate joined to the intermediate semiconductor substrate with a second oxide film interposed therebetween; a first reference pressure chamber formed as a space surrounded by a first recess of the first semiconductor substrate and the intermediate semiconductor substrate; a second reference pressure chamber formed as a space surrounded by a second recess formed on the first semiconductor substrate, the intermediate semiconductor substrate, and the second semiconductor substrate, the intermediate semiconductor substrate having a through hole communicating with the second recess of the first semiconductor substrate; and piezoresistors formed on a surface of the second semiconductor substrate that receives pressure, along outer peripheri

Abstract: Provided is a semiconductor pressure sensor that can maintain high reliability and measure pressure with high accuracy without increasing the size thereof and that has hydrogen permeation prevention performance. The semiconductor pressure sensor includes: a first semiconductor substrate having a recess formed thereon; a second semiconductor substrate joined to the first semiconductor substrate with an oxide film interposed therebetween; a reference pressure chamber formed as a space surrounded by the recess of the first semiconductor substrate and the second semiconductor substrate; a piezoresistor formed on a surface of the second semiconductor substrate that receives pressure, along an outer periphery of the reference pressure chamber; and a protective film formed on the surface of the second semiconductor substrate that receives pressure, and side surfaces of the second semiconductor substrate and the oxide film.

Abstract: A semiconductor differential pressure sensor element is such that as strain sensitive elements are disposed only inside a diaphragm, and strain relaxation grooves are provided along the diaphragm, it is difficult for thermal stress caused by expansion or contraction of a case to propagate to the strain sensitive elements, thus suppressing characteristic fluctuations resulting from a change in external temperature. Also, as a configuration is such that a sacrificial column is provided inside a depressed portion, and that the diaphragm is held by the sacrificial column in a diaphragm formation step which thins a second semiconductor substrate and a functional element formation step which repeatedly implements a cleaning step, breakage of the diaphragm can be prevented, thus achieving a significant improvement in yield.

Abstract: A polymer compound comprising a structural unit represented by the formula (1): wherein a ring A and a ring B represent a heterocyclic ring. A ring C represents a condensed aromatic heterocyclic ring not having a line-symmetric axis and a rotational axis. Z1 and Z2 represent a group represented by the formula (Z-1), a group represented by the formula (Z-2), a group represented by the formula (Z-3), a group represented by the formula (Z-4), a group represented by the formula (Z-5), a group represented by the formula (Z-6) or a group represented by the formula (Z-7). R represents an alkyl group, a cycloalkyl group, an alkoxy group, a cycloalkoxy group, an alkylthio group, a cycloalkylthio group, an aryl group or a monovalent heterocyclic group.].

Abstract: Tetracenothiophene derivatives are disclosed, which comprise alkoxy-C-alkyne solubilizing groups at transversal positions of the tetracenothiophene unit. These compounds enable preferential molecular stacking and a high field effect mobility and at the same time show improved solubility as compared to known benzothiophene- and pentacene-based materials. In addition, organic thin films comprising these derivatives, their use in electronic devices and components, such as organic thin film transistors, and methods of manufacturing the same are disclosed.

Abstract: A semiconductor differential pressure sensor element is such that as strain sensitive elements are disposed only inside a diaphragm, and strain relaxation grooves are provided along the diaphragm, it is difficult for thermal stress caused by expansion or contraction of a case to propagate to the strain sensitive elements, thus suppressing characteristic fluctuations resulting from a change in external temperature. Also, as a configuration is such that a sacrificial column is provided inside a depressed portion, and that the diaphragm is held by the sacrificial column in a diaphragm formation step which thins a second semiconductor substrate and a functional element formation step which repeatedly implements a cleaning step, breakage of the diaphragm can be prevented, thus achieving a significant improvement in yield.

Abstract: A polymer compound comprising a structural unit represented by the formula (1): wherein R1, R2, R3 and R4 each independently represent an alkyl group, an aryl group or a monovalent heterocyclic group, and these groups optionally have a substituent, two rings A may be the same or different, and represent a thiophene ring, a benzothiophene ring or a thienothiophene ring, n represents 1 or 2, and X represents a halogen atom, an alkyl group, an alkoxy group, an alkylthio group, an amino group, an aryl group, a monovalent heterocyclic group, an alkenyl group or an alkynyl group, and these groups optionally have a substituent, and when n is 2, two groups X may be the same or different.

Abstract: A polymer compound comprising a structural unit represented by the formula (1): wherein a ring A and a ring B represent a heterocyclic ring. A ring C represents a condensed aromatic heterocyclic ring not having a line-symmetric axis and a rotational axis. Z1 and Z2 represent a group represented by the formula (Z-1), a group represented by the formula (Z-2), a group represented by the formula (Z-3), a group represented by the formula (Z-4), a group represented by the formula (Z-5), a group represented by the formula (Z-6) or a group represented by the formula (Z-7). R represents an alkyl group, a cycloalkyl group, an alkoxy group, a cycloalkoxy group, an alkylthio group, a cycloalkylthio group, an aryl group or a monovalent heterocyclic group.].

Abstract: Tetracenothiophene derivatives are disclosed, which comprise alkoxy-C-alkyne solubilising groups at transversal positions of the tetracenothiophene unit. These compounds enable preferential molecular stacking and a high field effect mobility and at the same time show improved solubility as compared to known benzothiophene- and pentacene-based materials. In addition, organic thin films comprising these derivatives, their use in electronic devices and components, such as organic thin film transistors, and methods of manufacturing the same are disclosed.

Abstract: In a semiconductor pressure sensor element, a first hydrogen permeation protection film is provided on a principal surface side of a first silicon substrate, and a second hydrogen permeation protection film is provided on a principal surface side of a second silicon substrate. The permeation paths of the hydrogen fluxes shown by the arrows A and B in FIG. 9 are blocked by the films. Also, a trench surrounding a reference pressure chamber is provided, and the first hydrogen permeation protection film and a third hydrogen permeation protection film are joined at the bottom portion of the trench, thereby blocking the permeation path of the hydrogen flux shown by the arrow C in FIG. 9. Furthermore, by providing a hydrogen storage chamber, hydrogen is trapped before the hydrogen reaches the reference pressure chamber.

Abstract: In order to obtain a SOI wafer having an excellent ability of gettering metal impurities, an efficient method of manufacturing a SOI wafer, and a highly reliable MEMS device using such a SOI wafer, provided is a SOI wafer including: a support wafer (1) and an active layer wafer (6) which are bonded together with an oxide film (3) therebetween, each of the support wafer (1) and the active layer wafer (6) being a silicon wafer; a cavity (1b) formed in a bonding surface of at least one of the silicon wafers; and a gettering material (2) formed on a surface on a side opposite to the bonding surface.

Abstract: In order to obtain a SOI wafer having an excellent ability of gettering metal impurities, an efficient method of manufacturing a SOI wafer, and a highly reliable MEMS device using such a SOI wafer, provided is a SOI wafer including: a support wafer (1) and an active layer wafer (6) which are bonded together with an oxide film (3) therebetween, each of the support wafer (1) and the active layer wafer (6) being a silicon wafer; a cavity (1b) formed in a bonding surface of at least one of the silicon wafers; and a gettering material (2) formed on a surface on a side opposite to the bonding surface.

Abstract: In order to obtain a SOI wafer having an excellent ability of gettering metal impurities, an efficient method of manufacturing a SOI wafer, and a highly reliable MEMS device using such a SOI wafer, provided is a SOI wafer including: a support wafer (1) and an active layer wafer (6) which are bonded together with an oxide film (3) therebetween, each of the support wafer (1) and the active layer wafer (6) being a silicon wafer; a cavity (1b) formed in a bonding surface of at least one of the silicon wafers; and a gettering material (2) formed on a surface on a side opposite to the bonding surface.