Patents by Inventor Eiji Yoshikawa

Eiji Yoshikawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190250509
    Abstract: A photosensitive composition comprising a polymer compound composed of a repeating unit represented by the following formula (1) and at least one repeating unit selected from the group consisting of a repeating unit represented by the following formula (2), a repeating unit represented by the following formula (3) and a repeating unit represented by the following formula (4), and a compound having at least two azide groups: In the formula (1), Ar1 represents a phenyl group or a naphthyl group, and in the formula (2), Ar2 represents a phenyl group or a naphthyl group. l, m, n1 and n2 are numbers satisfying l?15 and m+n1+n2=100-l, and 1+n2?10 when the total amount of all repeating units contained in the above-described polymer compound is taken as 100.
    Type: Application
    Filed: February 6, 2019
    Publication date: August 15, 2019
    Applicant: SUMITOMO CHEMICAL COMPANY, LIMITED
    Inventors: Takayuki OKACHI, Eiji Yoshikawa
  • Publication number: 20190178739
    Abstract: A semiconductor pressure sensor includes: a first semiconductor substrate having a plurality of recesses formed thereon; an intermediate semiconductor substrate joined to the first semiconductor substrate with a first oxide film interposed therebetween; a second semiconductor substrate joined to the intermediate semiconductor substrate with a second oxide film interposed therebetween; a first reference pressure chamber formed as a space surrounded by a first recess of the first semiconductor substrate and the intermediate semiconductor substrate; a second reference pressure chamber formed as a space surrounded by a second recess formed on the first semiconductor substrate, the intermediate semiconductor substrate, and the second semiconductor substrate, the intermediate semiconductor substrate having a through hole communicating with the second recess of the first semiconductor substrate; and piezoresistors formed on a surface of the second semiconductor substrate that receives pressure, along outer peripheri
    Type: Application
    Filed: March 23, 2018
    Publication date: June 13, 2019
    Applicant: Mitsubishi Electric Corporation
    Inventor: Eiji YOSHIKAWA
  • Publication number: 20190177154
    Abstract: Provided is a semiconductor pressure sensor that can maintain high reliability and measure pressure with high accuracy without increasing the size thereof and that has hydrogen permeation prevention performance. The semiconductor pressure sensor includes: a first semiconductor substrate having a recess formed thereon; a second semiconductor substrate joined to the first semiconductor substrate with an oxide film interposed therebetween; a reference pressure chamber formed as a space surrounded by the recess of the first semiconductor substrate and the second semiconductor substrate; a piezoresistor formed on a surface of the second semiconductor substrate that receives pressure, along an outer periphery of the reference pressure chamber; and a protective film formed on the surface of the second semiconductor substrate that receives pressure, and side surfaces of the second semiconductor substrate and the oxide film.
    Type: Application
    Filed: May 8, 2018
    Publication date: June 13, 2019
    Applicant: Mitsubishi Electric Corporation
    Inventor: Eiji YOSHIKAWA
  • Publication number: 20190145685
    Abstract: An icemaker includes an ice-making tray in which ice is produced, an ice-discharging mechanism that removes the ice from the ice-making tray, a driver that drives the ice-discharging mechanism and that is attached to the ice-making tray on a front side in a front-rear direction, and a lighting unit that emits light. The lighting unit emits the light toward a rear side in the front-rear direction.
    Type: Application
    Filed: June 6, 2017
    Publication date: May 16, 2019
    Inventors: Eiji KURODA, Kenji SUGAYA, Hironobu YOSHIKAWA, Hideaki ITO
  • Patent number: 10260976
    Abstract: A semiconductor differential pressure sensor element is such that as strain sensitive elements are disposed only inside a diaphragm, and strain relaxation grooves are provided along the diaphragm, it is difficult for thermal stress caused by expansion or contraction of a case to propagate to the strain sensitive elements, thus suppressing characteristic fluctuations resulting from a change in external temperature. Also, as a configuration is such that a sacrificial column is provided inside a depressed portion, and that the diaphragm is held by the sacrificial column in a diaphragm formation step which thins a second semiconductor substrate and a functional element formation step which repeatedly implements a cleaning step, breakage of the diaphragm can be prevented, thus achieving a significant improvement in yield.
    Type: Grant
    Filed: February 27, 2017
    Date of Patent: April 16, 2019
    Assignee: Mitsubishi Electric Corporation
    Inventor: Eiji Yoshikawa
  • Patent number: 10239886
    Abstract: A polymer compound comprising a structural unit represented by the formula (1): wherein a ring A and a ring B represent a heterocyclic ring. A ring C represents a condensed aromatic heterocyclic ring not having a line-symmetric axis and a rotational axis. Z1 and Z2 represent a group represented by the formula (Z-1), a group represented by the formula (Z-2), a group represented by the formula (Z-3), a group represented by the formula (Z-4), a group represented by the formula (Z-5), a group represented by the formula (Z-6) or a group represented by the formula (Z-7). R represents an alkyl group, a cycloalkyl group, an alkoxy group, a cycloalkoxy group, an alkylthio group, a cycloalkylthio group, an aryl group or a monovalent heterocyclic group.].
    Type: Grant
    Filed: July 15, 2015
    Date of Patent: March 26, 2019
    Assignee: SUMITOMO CHEMICAL COMPANY, LIMITED
    Inventors: Tomoya Kashiki, Eiji Yoshikawa
  • Patent number: 10096785
    Abstract: Tetracenothiophene derivatives are disclosed, which comprise alkoxy-C-alkyne solubilizing groups at transversal positions of the tetracenothiophene unit. These compounds enable preferential molecular stacking and a high field effect mobility and at the same time show improved solubility as compared to known benzothiophene- and pentacene-based materials. In addition, organic thin films comprising these derivatives, their use in electronic devices and components, such as organic thin film transistors, and methods of manufacturing the same are disclosed.
    Type: Grant
    Filed: October 25, 2016
    Date of Patent: October 9, 2018
    Assignees: Cambridge Display Technology Limited, Sumitomo Chemical Company Limited
    Inventors: Nazrul Islam, Eiji Yoshikawa
  • Publication number: 20180120184
    Abstract: A semiconductor differential pressure sensor element is such that as strain sensitive elements are disposed only inside a diaphragm, and strain relaxation grooves are provided along the diaphragm, it is difficult for thermal stress caused by expansion or contraction of a case to propagate to the strain sensitive elements, thus suppressing characteristic fluctuations resulting from a change in external temperature. Also, as a configuration is such that a sacrificial column is provided inside a depressed portion, and that the diaphragm is held by the sacrificial column in a diaphragm formation step which thins a second semiconductor substrate and a functional element formation step which repeatedly implements a cleaning step, breakage of the diaphragm can be prevented, thus achieving a significant improvement in yield.
    Type: Application
    Filed: February 27, 2017
    Publication date: May 3, 2018
    Applicant: Mitsubishi Electric Corporation
    Inventor: Eiji YOSHIKAWA
  • Publication number: 20170186958
    Abstract: A polymer compound comprising a structural unit represented by the formula (1): wherein R1, R2, R3 and R4 each independently represent an alkyl group, an aryl group or a monovalent heterocyclic group, and these groups optionally have a substituent, two rings A may be the same or different, and represent a thiophene ring, a benzothiophene ring or a thienothiophene ring, n represents 1 or 2, and X represents a halogen atom, an alkyl group, an alkoxy group, an alkylthio group, an amino group, an aryl group, a monovalent heterocyclic group, an alkenyl group or an alkynyl group, and these groups optionally have a substituent, and when n is 2, two groups X may be the same or different.
    Type: Application
    Filed: July 15, 2015
    Publication date: June 29, 2017
    Applicant: SUMITOMO CHEMICAL COMPANY, LIMITED
    Inventors: Eiji YOSHIKAWA, Tomoya KASHIKI
  • Publication number: 20170145030
    Abstract: A polymer compound comprising a structural unit represented by the formula (1): wherein a ring A and a ring B represent a heterocyclic ring. A ring C represents a condensed aromatic heterocyclic ring not having a line-symmetric axis and a rotational axis. Z1 and Z2 represent a group represented by the formula (Z-1), a group represented by the formula (Z-2), a group represented by the formula (Z-3), a group represented by the formula (Z-4), a group represented by the formula (Z-5), a group represented by the formula (Z-6) or a group represented by the formula (Z-7). R represents an alkyl group, a cycloalkyl group, an alkoxy group, a cycloalkoxy group, an alkylthio group, a cycloalkylthio group, an aryl group or a monovalent heterocyclic group.].
    Type: Application
    Filed: July 15, 2015
    Publication date: May 25, 2017
    Applicant: SUMITOMO CHEMICAL COMPANY, LIMITED
    Inventors: Tomoya KASHIKI, Eiji YOSHIKAWA
  • Publication number: 20170133605
    Abstract: Tetracenothiophene derivatives are disclosed, which comprise alkoxy-C-alkyne solubilising groups at transversal positions of the tetracenothiophene unit. These compounds enable preferential molecular stacking and a high field effect mobility and at the same time show improved solubility as compared to known benzothiophene- and pentacene-based materials. In addition, organic thin films comprising these derivatives, their use in electronic devices and components, such as organic thin film transistors, and methods of manufacturing the same are disclosed.
    Type: Application
    Filed: October 25, 2016
    Publication date: May 11, 2017
    Applicants: CAMBRIDGE DISPLAY TECHNOLOGY LIMITED, SUMITOMO CHEMICAL COMPANY LIMITED
    Inventors: NAZRUL ISLAM, EIJI YOSHIKAWA
  • Publication number: 20170113917
    Abstract: In a semiconductor pressure sensor element, a first hydrogen permeation protection film is provided on a principal surface side of a first silicon substrate, and a second hydrogen permeation protection film is provided on a principal surface side of a second silicon substrate. The permeation paths of the hydrogen fluxes shown by the arrows A and B in FIG. 9 are blocked by the films. Also, a trench surrounding a reference pressure chamber is provided, and the first hydrogen permeation protection film and a third hydrogen permeation protection film are joined at the bottom portion of the trench, thereby blocking the permeation path of the hydrogen flux shown by the arrow C in FIG. 9. Furthermore, by providing a hydrogen storage chamber, hydrogen is trapped before the hydrogen reaches the reference pressure chamber.
    Type: Application
    Filed: February 8, 2016
    Publication date: April 27, 2017
    Applicant: Mitsubishi Electric Corporation
    Inventor: Eiji YOSHIKAWA
  • Patent number: 9266715
    Abstract: In order to obtain a SOI wafer having an excellent ability of gettering metal impurities, an efficient method of manufacturing a SOI wafer, and a highly reliable MEMS device using such a SOI wafer, provided is a SOI wafer including: a support wafer (1) and an active layer wafer (6) which are bonded together with an oxide film (3) therebetween, each of the support wafer (1) and the active layer wafer (6) being a silicon wafer; a cavity (1b) formed in a bonding surface of at least one of the silicon wafers; and a gettering material (2) formed on a surface on a side opposite to the bonding surface.
    Type: Grant
    Filed: February 28, 2014
    Date of Patent: February 23, 2016
    Assignee: Mitsubishi Electric Corporation
    Inventors: Eiji Yoshikawa, Jyunichi Ichikawa, Yukihisa Yoshida
  • Patent number: 9212049
    Abstract: In order to obtain a SOI wafer having an excellent ability of gettering metal impurities, an efficient method of manufacturing a SOI wafer, and a highly reliable MEMS device using such a SOI wafer, provided is a SOI wafer including: a support wafer (1) and an active layer wafer (6) which are bonded together with an oxide film (3) therebetween, each of the support wafer (1) and the active layer wafer (6) being a silicon wafer; a cavity (1b) formed in a bonding surface of at least one of the silicon wafers; and a gettering material (2) formed on a surface on a side opposite to the bonding surface.
    Type: Grant
    Filed: January 17, 2013
    Date of Patent: December 15, 2015
    Assignee: Mitsubishi Electric Corporation
    Inventors: Eiji Yoshikawa, Jyunichi Ichikawa, Yukihisa Yoshida
  • Publication number: 20140175573
    Abstract: In order to obtain a SOI wafer having an excellent ability of gettering metal impurities, an efficient method of manufacturing a SOI wafer, and a highly reliable MEMS device using such a SOI wafer, provided is a SOI wafer including: a support wafer (1) and an active layer wafer (6) which are bonded together with an oxide film (3) therebetween, each of the support wafer (1) and the active layer wafer (6) being a silicon wafer; a cavity (1b) formed in a bonding surface of at least one of the silicon wafers; and a gettering material (2) formed on a surface on a side opposite to the bonding surface.
    Type: Application
    Filed: February 28, 2014
    Publication date: June 26, 2014
    Applicant: Mitsubishi Electric Corporation
    Inventors: Eiji YOSHIKAWA, Jyunichi ICHIKAWA, Yukihisa YOSHIDA
  • Patent number: 8710600
    Abstract: A semiconductor pressure sensor that can improve diaphragm breakage pressure tolerance is provided. Included are: a first semiconductor substrate on which is formed a recess portion that has an opening on a first surface in a thickness direction; a second semiconductor substrate that is disposed so as to face the first surface of the first semiconductor substrate; and a first silicon oxide film that is interposed between the first semiconductor substrate and the second semiconductor substrate, and on which is formed a penetrating aperture that communicates between the recess portion and the second semiconductor substrate, and at least a portion of an edge portion of the penetrating aperture is positioned inside an opening edge portion of the recess portion when viewed from a side facing the penetrating aperture and the opening of the recess portion.
    Type: Grant
    Filed: November 18, 2010
    Date of Patent: April 29, 2014
    Assignee: Mitsubishi Electric Corporation
    Inventors: Eiji Yoshikawa, Shinichi Izuo
  • Patent number: 8647908
    Abstract: A semiconductor pressure sensor includes a first substrate having a concave portion and an alignment mark at a main surface thereof, and a second substrate formed on the main surface of the first substrate and having a diaphragm provided to cover a space inside the concave portion of the first substrate and a gauge resistor provided on the diaphragm. The alignment mark is provided to be exposed from the second substrate. Accordingly, it is possible to obtain a semiconductor pressure sensor and a method of manufacturing the same with reduced production costs and with improved pressure measuring accuracy.
    Type: Grant
    Filed: March 7, 2012
    Date of Patent: February 11, 2014
    Assignee: Mitsubishi Electric Corporation
    Inventors: Eiji Yoshikawa, Shinichi Izuo
  • Publication number: 20130277675
    Abstract: In order to obtain a SOI wafer having an excellent ability of gettering metal impurities, an efficient method of manufacturing a SOI wafer, and a highly reliable MEMS device using such a SOI wafer, provided is a SOI wafer including: a support wafer (1) and an active layer wafer (6) which are bonded together with an oxide film (3) therebetween, each of the support wafer (1) and the active layer wafer (6) being a silicon wafer; a cavity (1b) formed in a bonding surface of at least one of the silicon wafers; and a gettering material (2) formed on a surface on a side opposite to the bonding surface.
    Type: Application
    Filed: January 17, 2013
    Publication date: October 24, 2013
    Inventors: Eiji YOSHIKAWA, Jyunichi ICHIKAWA, Yukihisa YOSHIDA
  • Publication number: 20130105922
    Abstract: A semiconductor pressure sensor includes a first substrate having a concave portion and an alignment mark at a main surface thereof, and a second substrate formed on the main surface of the first substrate and having a diaphragm provided to cover a space inside the concave portion of the first substrate and a gauge resistor provided on the diaphragm. The alignment mark is provided to be exposed from the second substrate. Accordingly, it is possible to obtain a semiconductor pressure sensor and a method of manufacturing the same with reduced production costs and with improved pressure measuring accuracy.
    Type: Application
    Filed: March 7, 2012
    Publication date: May 2, 2013
    Applicant: Mitsubishi Electric Corporation
    Inventors: Eiji YOSHIKAWA, Shinichi IZUO
  • Publication number: 20120190868
    Abstract: Provided are a novel compound suitable as an organic semiconductor material, the compound being a substituted benzochalcogenoacene compound represented by the formula (1), a thin film comprising the compound, and an organic semiconductor device having the thin film as a component. In the formula (1), each E independently represents a sulfur or selenium atom, and R1 and R2 each independently represents a hydrogen atom, an optionally substituted C4-30 alkyl group, an optionally substituted C4-30 alkoxy group, an optionally substituted C6-30 aryl group, an optionally substituted C7-30 aralkyl group, an optionally substituted C4-30 heteroaryl group, an optionally substituted C5-30 heteroaralkyl group, or an optionally fluorinated C3-30 trialkylsilyl group, both R1 and R2 being not hydrogen atoms.
    Type: Application
    Filed: July 8, 2010
    Publication date: July 26, 2012
    Applicants: NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY, SUMITOMO CHEMICAL COMPANY, LIMITED
    Inventors: Yasuo Miyata, Eiji Yoshikawa, Shigehiro Yamaguchi