Abstract: There is provided a plasma processing apparatus including: a chamber having a processing space in which a plasma processing is performed on a substrate and a synthetic space in which electromagnetic waves are synthesized; a dielectric window configured to partition the processing space and the synthetic space; an antenna unit including a plurality of antennas configured to radiate the electromagnetic waves to the synthetic space; an electromagnetic wave output part configured to output the electromagnetic waves to the antenna unit; and a controller configured to control the antenna unit to function as the phased array antenna, wherein the plurality of antennas are helical antennas.

Abstract: A method of controlling a scanning-type plasma processing apparatus using a phased array antenna, includes observing light emission of plasma generated inside a processing container through observation windows provided at multiple positions in the processing container, calculating an in-plane distribution of values representing characteristics of the plasma on a substrate, based on data on the observed light emission of the plasma, and correcting a scanning pattern and/or a plasma density distribution of the plasma based on the calculated in-plane distribution of the values representing the characteristics of the plasma on the substrate.

Abstract: A plasma processing apparatus disclosed herein includes a stage disposed in a processing container and configured to mount thereon a substrate, a rotary driving mechanism configured to rotatably drive the stage, and a plurality of plasma sources provided on an upper wall of the processing container facing the stage. The plurality of plasma sources are not arranged axially symmetrically with respect to a rotation axis of the stage.

Abstract: There is a plasma processing apparatus comprising: a processing container in which a mounting table on which a substrate is mounted is arranged and plasma processing is performed; a plurality of sensors for detecting a state of plasma generated in the processing container; and a controller for estimating a state of plasma in the processing container based on the state of plasma obtained from the plurality of sensors, wherein the controller obtains a two-dimensional distribution representing the state of plasma with respect to installation positions of the plurality of sensors, from data obtained from the plurality of sensors, and estimates the state of plasma in the processing container based on the obtained two-dimensional distribution.

Abstract: A plasma processing method includes: supplying a gas into a processing container; and intermittently supplying microwave powers output from a plurality of microwave introducing modules into the processing container. In the intermittently supplying the microwave powers, the supply of all the microwave powers from the plurality of microwave introducing modules is periodically in an OFF state for a given time.

Abstract: There is provided a plasma processing apparatus that converts a gas supplied into a processing container into a plasma to process a substrate, the plasma processing apparatus including: a microwave introduction window disposed in each of a plurality of openings formed in a ceiling wall of the processing container, the microwave introduction window being configured to supply power of microwaves into the processing container; and a plurality of grooves formed on the ceiling wall to surround the openings respectively, wherein widths between the grooves and the openings are not uniform with respect to circumferential directions of the openings.

Abstract: There is provided a tuner that forms a part of an electromagnetic wave transmission path for supplying electromagnetic waves from a power supply to a load, and that matches an impedance on a power supply side and an impedance on a load side, comprising: a coaxial line including a cylindrical inner conductor and a cylindrical outer conductor disposed coaxially outside the inner conductor; an annular first dielectric constant changing material disposed in a space between the inner conductor and the outer conductor of the coaxial line, and having a variable dielectric constant; an annular second dielectric constant changing material spaced apart from the first dielectric constant changing material in a line length direction of the coaxial line, disposed in the space between the inner conductor and the outer conductor of the coaxial line, and having a variable dielectric constant; a first power supply portion configured to supply power to the first dielectric constant changing material; and a second power supply

Abstract: A plasma processing apparatus includes a chamber having a processing space for performing plasma processing on a substrate and a synthesis space for synthesizing electromagnetic waves, a dielectric window configured to partition the processing space and the synthesis space, an antenna unit having a plurality of antennas that radiate the electromagnetic waves into the synthesis space and functioning as a phased array antenna, an electromagnetic wave output part configured to output the electromagnetic waves to the antenna unit, and a controller configured to cause the antenna unit to function as the phased array antenna. The dielectric window has a plurality of recesses on a surface thereof facing the processing space.

Abstract: A plasma processing apparatus includes a stage provided in a chamber and having a heater therein, the stage being configured to place a substrate thereon, and an annular member provided around the stage to be spaced apart therefrom and formed of a dielectric material. At least one annular groove is formed in a lower surface of the annular member in a radial direction.

Abstract: There is provided a plasma processing apparatus including: a processing container; a first electrode provided inside the processing container and connected to a high-frequency power supply; a second electrode provided inside the processing container to face the first electrode, the second electrode being grounded; and a film thickness calculator connected to at least one of the first electrode and the second electrode and configured to calculate a thickness of a film deposited on the at least one of the first electrode and the second electrode.

Abstract: A plasma processing apparatus includes: a processing container; a ceiling plate that constitutes a ceiling wall of the processing container, is formed of a first dielectric, and has an opening formed in the first dielectric; at least one transmissive window disposed in the opening and formed of a second dielectric having a second permittivity greater than a first permittivity of the first dielectric; and at least one electromagnetic wave supplier configured to supply electromagnetic waves toward the at least one transmissive window.

Abstract: This plasma processing apparatus for performing plasma processing on an end part of a substrate includes a processing container, a substrate supporting member configured to support a portion of the substrate and to which a high frequency power is applied, at least a side of the substrate supporting member being composed of a dielectric, an opposing dielectric member composed of a dielectric and disposed to oppose the substrate supporting member, and a gas supply configured to supply a processing gas for generating plasma on at least the end part of the substrate. The plasma processing apparatus further includes a side ground electrode provided at a side of the substrate so as to be close to the substrate to such an extent that an electrical coupling is formed between an end surface of the substrate and the side ground electrode, the side ground electrode having a ground potential.

Abstract: A plasma probe device includes: an antenna installed in an opening portion formed in a wall of a processing container via a seal member that seals between a vacuum space and an atmospheric space; and a light transmission portion installed inside the antenna or forming at least a portion of the antenna, and configured to transmit emission of plasma generated in the vacuum space to the atmospheric space.

Abstract: A plasma processing apparatus includes a main container, one or more radio frequency antennas, a plurality of metal windows, and a plasma detector. The one or more radio frequency antennas are configured to generate inductively coupled plasma in a plasma generation region in the main container. The metal windows are disposed between the plasma generation region and the radio frequency antennas while being insulated from each other and from the main container. Further, a plasma detector is connected to each of the metal windows and configured to detect a plasma state.

Abstract: Measuring a plasma state using a probe device in the case of performing plasma processing on a substrate by introducing process gas into a processing container accommodating the substrate and by producing pulsed plasma using an electromagnetic wave pulse obtained by processing an electromagnetic wave generated from an electromagnetic wave oscillator using a pulsing device. An AC voltage to the pulsed plasma is applied via the probe device; transmitting a signal from the pulsed plasma based on the AC voltage via the probe device and measuring data including a current value; and obtaining a state of the pulsed plasma by analyzing the measured data. The frequency of the AC voltage deviates from a frequency of the electromagnetic wave pulse so that the number of data required for the measurement of the pulsed plasma within one cycle of the electromagnetic wave pulse is obtained within allowable time.

Abstract: An array antenna radiates an electromagnetic wave into a chamber of a plasma processing apparatus. The array antenna includes antennas and coupling prevention elements arranged at intervals between the antennas. Each of the coupling prevention elements includes a first member connected to a ceiling wall which is a ground surface in the chamber and a second member connected to a tip end of the first member or a vicinity of the tip end of the first member.

Abstract: A microwave plasma processing apparatus includes a microwave supply part configured to supply a microwave; a microwave emission member provided on a ceiling of a process chamber and configured to emit the microwave supplied from the microwave supply part; and a microwave transmission member configured to close an opening provided in the ceiling and made of a dielectric substance that transmits the microwave transmitted to a slot antenna. The ceiling has at least two recesses provided on an outer side of the opening, each of the at least two recesses having a depth different from each other.

Abstract: A plasma density monitor for monitoring a plasma density of surface wave plasma in a chamber accommodating a substrate and performs a plasma process on the substrate. The monitor includes: a monopole antenna installed to extend from a wall of the chamber toward an interior of the chamber and to be perpendicular to an inner wall surface of the chamber, and configured to receive a surface wave; a coaxial line configured to extract a detection value from a signal received by the monopole antenna; a length adjuster configured to adjust a length of the monopole antenna; and a controller configured to control the length adjuster so as to obtain a wavelength of the surface wave and the plasma density of the surface wave plasma from the wavelength of the surface wave.

Abstract: Embodiments of this application discloses a plasma processing method performed in a plasma processing apparatus having a plurality of plasma sources, the plasma processing method comprising: controlling each of the plasma sources so that at least one plasma source of the plurality of plasma sources is in a first state referring an OFF-state or a power state of a first level and the remaining plasma sources are in a second state referring an ON-state or a power state of a second level higher than the power state of the first level; and generating plasma from a processing gas with power output from the plurality of plasma sources, and processing a substrate, wherein said controlling of each of the plasma sources includes repeatedly controlling so that the plasma source of the first state among the plurality of plasma sources is sequentially transitioned.

Abstract: There is provided a plasma processing method in a plasma processing apparatus including a chamber, a stage on which a substrate is placed in the chamber, a plurality of radiating devices configured to radiate a plurality of electromagnetic waves, and a dielectric window disposed between the plurality of radiating devices and the stage. The method comprises: preparing the substrate on the stage; controlling a phase of at least one of the plurality of electromagnetic waves radiated from the plurality of radiating devices; radiating the plurality of electromagnetic waves into the chamber from the plurality of radiating devices; and processing the substrate using localized plasma generated from a gas supplied between the dielectric window and the stage.