Patents by Inventor Eikyuu Hiruma

Eikyuu Hiruma has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4952839
    Abstract: A photoconductive device having a photoconductive layer which includes an amorphous semiconductor layer capable of charge multiplication in at least a part thereof is disclosed. The method of operating such a photoconductive device is also disclosed. By using the avalanche effect of the amorphous semiconductor layer, it is possible to realize a highly sensitive photoconductive device while maintaining low lag property.
    Type: Grant
    Filed: October 12, 1989
    Date of Patent: August 28, 1990
    Assignees: Hitachi, Ltd, Nippon Hoso Kyokai
    Inventors: Kenkichi Tanioka, Mitsuo Kosugi, Junichi Yamazaki, Keiichi Shidara, Kazuhisa Taketoshi, Tatsuro Kawamura, Eikyuu Hiruma, Shiro Suzuki, Takashi Yamashita, Masaaki Aiba, Yochizumi Ikeda, Tadaaki Hirai, Yukio Takasaki, Sachio Ishioka, Tatsuo Makishima, Kenji Sameshima, Tsuyoshi Uda, Naohiro Goto, Yasuhiko Nonaka, Eisuke Inoue, Kazutaka Tsuji, Hirofumi Ogawa
  • Patent number: 4900975
    Abstract: A target of an image pickup tube is formed by laminating at least a transparent conductive film, an amorphous layer consisting essentially of silicon, and an amorphous layer consisting essentially of selenium in the above order on a light-transmitting substrate.
    Type: Grant
    Filed: June 29, 1987
    Date of Patent: February 13, 1990
    Assignees: Hitachi, Ltd., Nippon Hoso Kyokai
    Inventors: Yasuharu Shimomoto, Sachio Ishioka, Yukio Takasaki, Tadaaki Hirai, Kazutaka Tsuji, Tatsuo Makishima, Hirokazu Matsubara, Kenji Sameshima, Junichi Yamazaki, Kenkichi Tanioka, Mitsuo Kosugi, Keiichi Shidara, Tatsuro Kawamura, Eikyuu Hiruma, Takashi Yamashita
  • Patent number: 4888521
    Abstract: A photoconductive device having a photoconductive layer which includes an amorphous semiconductor layer capable of charge multiplication in at least a part thereof is disclosed. The method of operating such a photoconductive device is also disclosed. By using the avalanche effect of the amorphous semiconductor layer, it is possible to realize a highly sensitive photoconductive device while maintaining low lag property.
    Type: Grant
    Filed: July 2, 1987
    Date of Patent: December 19, 1989
    Assignees: Hitachi Ltd., Nippon Hoso Kyokai
    Inventors: Kenkichi Tanioka, Keiichi Shidara, Tatsuro Kawamura, Junichi Yamazaki, Eikyuu Hiruma, Kazuhisa Taketoshi, Shiro Suzuki, Takashi Yamashita, Mitsuo Kosugi, Yochizumi Ikeda, Masaaki Aiba, Tadaaki Hirai, Yukio Takasaki, Sachio Ishioka, Tatsuo Makishima, Kenji Sameshima, Tsuyoshi Uda, Naohiro Goto, Yasuhiko Nonaka, Eisuke Inoue, Kazutaka Tsuji, Hirofumi Ogawa
  • Patent number: 4866332
    Abstract: A target of an image pickup tube, having a transparent substrate, a transparent conductive film, a p-type photoconductive film made mainly from amorphous Se, and an n-type conductive film capable of forming a rectifying contact at the interface with the p-type photoconductive film, using the rectifying contact as a reverse bias, characterized in that the p-type photoconductive film containing at least a region having more than 35%, and to 60% by weight of Te in the film thickness direction, and at least a region containing 0.005 to 5% by weight of at least a material capable of forming shallow levels in the amorphous Se in the film thickness direction, has good after-image characteristics even if operated at a high temperature.
    Type: Grant
    Filed: February 19, 1987
    Date of Patent: September 12, 1989
    Assignees: Hitachi, Ltd., Nippon Hoso Kyokai
    Inventors: Yukio Takasaki, Tatsuo Makishima, Kazutaka Tsuji, Tadaaki Hirai, Eisuke Inoue, Yasuhiko Nonaka, Naohiro Goto, Masanao Yamamoto, Keiichi Shidara, Kenkichi Tanioka, Takashi Yamashita, Tatsuro Kawamura, Eikyuu Hiruma, Shirou Suzuki, Masaaki Aiba
  • Patent number: 4717854
    Abstract: An image pick-up tube target comprising an N-type conductive film formed on a transparent substrate, and P-type photoconductive film in rectifying contact with the N-type conductive film and comprising a first layer containing As, fluoride and Se, a second layer containing As, Te and Se, a portion of said second layer containing fluoride, a third layer containing As and Se, the composition of the third layer being different along the direction of thickness thereof, a fourth layer containing As and Se, wherein the concentration of As in the second layer varies continuously along the direction of thickness thereof, and in the second layer the minimum As concentration is located on the first layer side of the second layer and the maximum As concentration is located on the third layer side of the second layer.
    Type: Grant
    Filed: February 19, 1986
    Date of Patent: January 5, 1988
    Assignees: Hitachi, Ltd., Nippon Hoso Kyokai
    Inventors: Masanao Yamamoto, Eisuke Inoue, Keiichi Shidara, Eikyuu Hiruma