Abstract: An electronic memory block comprises phase change memory cells for memory storage and further phase change memory cells forming logic gates, to provide in-memory data processing.

Abstract: A memory device, a programmable insulator-semiconductor bipolar transistor (PISBT) and a method for measuring a temperature of a filament, the method may include: providing base voltages of different values to a base of the PISBT; obtaining measurement results by measuring a minority carrier current that flows from a collector of the PISBT in response to the providing of the base voltages of the different values; and calculating the temperature of the filament, based upon the measurement results; wherein the filament is formed in a variable resistance layer of the PISBT when the PISBT is programmed to a certain value out of multiple programmable values, wherein the filament facilitates a flow of minority carriers from an emitter of the PISBT.