Patents by Inventor Eisaku KAJI

Eisaku KAJI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11152762
    Abstract: A semiconductor laser device of an edge emission type, where a waveguide mode is multi-mode, is provided. The semiconductor laser device includes a first facet of the waveguide on an emission direction front side, the first facet having a first width in a horizontal direction perpendicular to a longitudinal direction of the waveguide; and a second facet of the waveguide on an emission direction rear side, the second facet having the first width, wherein a width of the waveguide, in the horizontal direction, is at least partially narrower than the first width, between the first facet and the second facet.
    Type: Grant
    Filed: July 5, 2018
    Date of Patent: October 19, 2021
    Assignee: FURUKAWA ELECTRIC CO., LTD.
    Inventors: Eisaku Kaji, Yutaka Ohki
  • Publication number: 20210281039
    Abstract: A semiconductor-laser-chip-on-submount includes: a semiconductor laser chip that includes a semiconductor portion having an emitting facet and a rear facet along a longitudinal direction and emits laser light from the emitting facet; and a submount where the semiconductor laser chip is mounted. Further, a first distance between the submount and the emitting facet of the semiconductor portion is less than a second distance between the submount and the rear facet of the semiconductor portion.
    Type: Application
    Filed: May 25, 2021
    Publication date: September 9, 2021
    Applicant: FURUKAWA ELECTRIC CO., LTD.
    Inventors: Eisaku KAJI, Yutaka OHKI
  • Patent number: 10505346
    Abstract: A semiconductor laser device of an edge emission type, where a waveguide mode is multi-mode, is provided. The semiconductor laser device includes a first facet of the waveguide on an emission direction front side, the first facet having a first width in a horizontal direction perpendicular to a longitudinal direction of the waveguide; and a second facet of the waveguide on an emission direction rear side, the second facet having the first width, wherein a width of the waveguide, in the horizontal direction, is at least partially narrower than the first width, between the first facet and the second facet.
    Type: Grant
    Filed: July 5, 2018
    Date of Patent: December 10, 2019
    Assignee: FURUKAWA ELECTRIC CO., LTD.
    Inventors: Eisaku Kaji, Yutaka Ohki
  • Publication number: 20180323579
    Abstract: A semiconductor laser device of an edge emission type, where a waveguide mode is multi-mode, is provided. The semiconductor laser device includes a first facet of the waveguide on an emission direction front side, the first facet having a first width in a horizontal direction perpendicular to a longitudinal direction of the waveguide; and a second facet of the waveguide on an emission direction rear side, the second facet having the first width, wherein a width of the waveguide, in the horizontal direction, is at least partially narrower than the first width, between the first facet and the second facet.
    Type: Application
    Filed: July 5, 2018
    Publication date: November 8, 2018
    Applicant: FURUKAWA ELECTRIC CO., LTD.
    Inventors: Eisaku KAJI, Yutaka OHKI
  • Patent number: 9960572
    Abstract: A semiconductor device includes a semiconductor layer formed of a III-V group semiconductor crystal containing As as a primary component of a V group. A V group element other than As has been introduced at a concentration of 0.02 to 5% into a V group site of the III-V group semiconductor crystal in the semiconductor layer.
    Type: Grant
    Filed: August 12, 2016
    Date of Patent: May 1, 2018
    Assignee: FURUKAWA ELECTRIC CO., LTD.
    Inventors: Masayuki Iwami, Hirotatsu Ishii, Norihiro Iwai, Takeyoshi Matsuda, Akihiko Kasukawa, Takuya Ishikawa, Yasumasa Kawakita, Eisaku Kaji
  • Publication number: 20160351392
    Abstract: A semiconductor device includes a semiconductor layer formed of a III-V group semiconductor crystal containing As as a primary component of a V group. A V group element other than As has been introduced at a concentration of 0.02 to 5% into a V group site of the III-V group semiconductor crystal in the semiconductor layer.
    Type: Application
    Filed: August 12, 2016
    Publication date: December 1, 2016
    Applicant: FURUKAWA ELECTRIC CO., LTD.
    Inventors: Masayuki IWAMI, Hirotatsu ISHII, Norihiro IWAI, Takeyoshi MATSUDA, Akihiko KASUKAWA, Takuya ISHIKAWA, Yasumasa KAWAKITA, Eisaku KAJI
  • Publication number: 20160352075
    Abstract: A semiconductor laser device includes an active layer including a well layer and a barrier layer formed of a III-V group semiconductor crystal containing As as a primary component of a V group. A V group element other than As has been introduced at a concentration of 0.02 to 5% into a V group site of the III-V group semiconductor crystal in at least one of the well layer and the barrier layer, and a III group site of the III-V group semiconductor crystal in at least one of the well layer and the barrier layer contains Al.
    Type: Application
    Filed: August 12, 2016
    Publication date: December 1, 2016
    Applicant: FURUKAWA ELECTRIC CO., LTD.
    Inventors: Masayuki IWAMI, Hirotatsu ISHII, Norihiro IWAI, Takeyoshi MATSUDA, Akihiko KASUKAWA, Takuya ISHIKAWA, Yasumasa KAWAKITA, Eisaku KAJI