Patents by Inventor Eishi Shiobara

Eishi Shiobara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11366380
    Abstract: According to one embodiment, a reflective mask comprises a reflection layer including a first region having a plurality of first patterns, a second region surrounding the first region, and a third region within the second region. The reflection layer includes a stack of alternating first layers and second layers. An absorber film covers the second region and has a second pattern that includes an opening exposing a portion of the third region. In some examples, the third region can include a plurality of third patterns therein.
    Type: Grant
    Filed: August 26, 2020
    Date of Patent: June 21, 2022
    Assignee: KIOXIA CORPORATION
    Inventor: Eishi Shiobara
  • Patent number: 11112344
    Abstract: According to one embodiment, a particle measuring method is disclosed. The method includes irradiating a detection liquid with light. The detection liquid contains methyl salicylate. The method further includes converting scattered light from the detection liquid into an electric signal by using photoelectric conversion after irradiating the detection liquid with the light. The method further includes performing a particle measurement on the detection liquid by using the electric signal.
    Type: Grant
    Filed: March 3, 2020
    Date of Patent: September 7, 2021
    Assignees: Kioxia Corporation, Rion Co., Ltd.
    Inventors: Hiroshi Tomita, Hidekazu Hayashi, Eishi Shiobara, Kaoru Kondo, Takuya Tabuchi, Kazuna Bando, Sota Kondo
  • Publication number: 20210072634
    Abstract: According to one embodiment, a reflective mask comprises a reflection layer including a first region having a plurality of first patterns, a second region surrounding the first region, and a third region within the second region. The reflection layer includes a stack of alternating first layers and second layers. An absorber film covers the second region and has a second pattern that includes an opening exposing a portion of the third region. In some examples, the third region can include a plurality of third patterns therein.
    Type: Application
    Filed: August 26, 2020
    Publication date: March 11, 2021
    Inventor: Eishi SHIOBARA
  • Publication number: 20200284714
    Abstract: According to one embodiment, a particle measuring method is disclosed. The method includes irradiating a detection liquid with light. The detection liquid contains methyl salicylate. The method further includes converting scattered light from the detection liquid into an electric signal by using photoelectric conversion after irradiating the detection liquid with the light. The method further includes performing a particle measurement on the detection liquid by using the electric signal.
    Type: Application
    Filed: March 3, 2020
    Publication date: September 10, 2020
    Applicants: Kioxia Corporation, RION Co., Ltd.
    Inventors: Hiroshi TOMITA, Hidekazu HAYASHI, Eishi SHIOBARA, Kaoru KONDO, Takuya TABUCHI, Kazuna BANDO, Sota KONDO
  • Patent number: 9958794
    Abstract: According to one embodiment, a management method of a manufacturing apparatus of a semiconductor device, the method includes measuring a weight of a pre-exposure substrate including a semiconductor substrate and a resist film provided on the semiconductor substrate, performing an exposure process for the resist film, measuring a weight of a post-exposure substrate including the semiconductor substrate and the resist film after the exposure process is performed, and acquiring a weight difference between the weight of the pre-exposure substrate and the weight of the post-exposure substrate.
    Type: Grant
    Filed: August 26, 2015
    Date of Patent: May 1, 2018
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventor: Eishi Shiobara
  • Patent number: 9891524
    Abstract: According to one embodiment, a method of manufacturing a semiconductor device, includes forming an energy-ray-curable resin layer containing a sensitizer for increasing sensitivity to exposure light, on an underlayer region including a semiconductor substrate, irradiating the energy-ray-curable resin layer with energy rays to form a lower layer film containing the sensitizer, forming a resist film on the lower layer film, diffusing the sensitizer from the lower layer film into the resist film by thermal treatment, irradiating the resist film in which the sensitizer is diffused with exposure light, and developing the resist film irradiated with the exposure light.
    Type: Grant
    Filed: August 26, 2015
    Date of Patent: February 13, 2018
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventor: Eishi Shiobara
  • Publication number: 20160216609
    Abstract: According to one embodiment, a method of manufacturing a semiconductor device, includes forming an energy-ray-curable resin layer containing a sensitizer for increasing sensitivity to exposure light, on an underlayer region including a semiconductor substrate, irradiating the energy-ray-curable resin layer with energy rays to form a lower layer film containing the sensitizer, forming a resist film on the lower layer film, diffusing the sensitizer from the lower layer film into the resist film by thermal treatment, irradiating the resist film in which the sensitizer is diffused with exposure light, and developing the resist film irradiated with the exposure light.
    Type: Application
    Filed: August 26, 2015
    Publication date: July 28, 2016
    Applicant: Kabushiki Kaisha Toshiba
    Inventor: Eishi SHIOBARA
  • Publication number: 20160204040
    Abstract: According to one embodiment, a management method of a manufacturing apparatus of a semiconductor device, the method includes measuring a weight of a pre-exposure substrate including a semiconductor substrate and a resist film provided on the semiconductor substrate, performing an exposure process for the resist film, measuring a weight of a post-exposure substrate including the semiconductor substrate and the resist film after the exposure process is performed, and acquiring a weight difference between the weight of the pre-exposure substrate and the weight of the post-exposure substrate.
    Type: Application
    Filed: August 26, 2015
    Publication date: July 14, 2016
    Applicant: Kabushiki Kaisha Toshiba
    Inventor: Eishi SHIOBARA
  • Patent number: 8883405
    Abstract: According to one embodiment, a method is disclosed for forming a pattern. The method can include forming a resist film above a subject. The resist film includes a photosensitive material. The resist film has a concentration profile having a concentration of the photosensitive material being higher on a side of a bottom of the resist film than on a side of a surface of the resist film. A portion of the resist film has a maximum concentration of the photosensitive material existing closer to the side of the bottom than a center of the resist film in a thickness direction. The method can include irradiating the resist film with a light from the side of the surface. The method can include developing the resist film after the resist film being irradiated with the light.
    Type: Grant
    Filed: August 27, 2012
    Date of Patent: November 11, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventor: Eishi Shiobara
  • Patent number: 8753803
    Abstract: According to one embodiment, a pattern forming method is disclosed. The method can include selectively providing a curing agent to a pattern in a template, contacting the template provided the curing agent to a substrate, irradiating the curing agent with light where the template and the substrate are contacted each other to harden the curing agent, demolding the template from the substrate to form a curing agent pattern on the substrate, and etching the substrate on a basis of the curing agent pattern.
    Type: Grant
    Filed: September 9, 2010
    Date of Patent: June 17, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Yoshihisa Kawamura, Eishi Shiobara, Shinichi Ito
  • Patent number: 8747682
    Abstract: According to one embodiment, a pattern formation method is disclosed. The method includes forming a plurality of regions on a foundation and the plurality of the regions correspond to different pattern sizes. The method includes separating each of a plurality of block copolymers from another one of the plurality of the block copolymers and segregating the each of the plurality of the block copolymers into a corresponding one of the regions. The method includes performing a phase separation of the each of the block copolymers of each of the regions. The method includes selectively removing a designated phase of each of the phase-separated block copolymers to form a pattern of the each of the block copolymers and the pattern has a different pattern size for the each of the regions.
    Type: Grant
    Filed: August 3, 2010
    Date of Patent: June 10, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Kentaro Matsunaga, Tomoya Oori, Eishi Shiobara, Yukiko Sato, Yoshihisa Kawamura
  • Publication number: 20130164691
    Abstract: According to one embodiment, a method is disclosed for forming a pattern. The method can include forming a resist film above a subject. The resist film includes a photosensitive material. The resist film has a concentration profile having a concentration of the photosensitive material being higher on a side of a bottom of the resist film than on a side of a surface of the resist film. A portion of the resist film has a maximum concentration of the photosensitive material existing closer to the side of the bottom than a center of the resist film in a thickness direction. The method can include irradiating the resist film with a light from the side of the surface. The method can include developing the resist film after the resist film being irradiated with the light.
    Type: Application
    Filed: August 27, 2012
    Publication date: June 27, 2013
    Applicant: Kabushiki Kaisha Toshiba
    Inventor: Eishi SHIOBARA
  • Patent number: 8419995
    Abstract: An imprint method includes applying a light curable resin on a substrate to be processed, the substrate including first and second regions on which the light curable resin is applied, contacting an imprint mold with the light curable resin, curing the light curable resin by irradiating the light curable resin with light passing through the imprint mold, generating gas by performing a predetermined process to the light curable resin applied on a region of the substrate, the region including at least the first region, wherein an amount of gas generated from the light curable resin applied on the first region is larger than an amount of gas generated from the light curable resin of the second region, and forming a pattern by separating the imprint mold from the light curable resin after the gas being generated.
    Type: Grant
    Filed: September 21, 2009
    Date of Patent: April 16, 2013
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Ikuo Yoneda, Kentaro Matsunaga, Yukiko Kikuchi, Yoshihisa Kawamura, Eishi Shiobara, Shinichi Ito, Tetsuro Nakasugi, Hirokazu Kato
  • Patent number: 8329385
    Abstract: A method of manufacturing a semiconductor device according to one embodiment, includes: forming a first mask material film on a workpiece film formed on a semiconductor substrate; forming a resist pattern on the first mask material film; forming a second mask material film having a desired film thickness on the first mask material film so as to cover the resist pattern; carrying out etchback of the second mask material film so as to expose the resist pattern and the first mask material film; processing the resist pattern and the first mask material film simultaneously which are exposed, while leaving the second mask material film of which etchback is carried out; and processing the workpiece film which exposes under the first mask material film.
    Type: Grant
    Filed: June 10, 2009
    Date of Patent: December 11, 2012
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Eishi Shiobara, Keisuke Kikutani, Kazuyuki Yahiro, Kentaro Matsunaga, Tomoya Oori
  • Patent number: 8198005
    Abstract: Provided is a method of forming a resist pattern capable of forming a resist pattern, whose dimensional variations and defects are reduced as far as possible, with a high throughput. The invention provides a method of forming a resist pattern involving the following: forming a resist film on a substrate; subjecting the resist film to exposure treatment in a pressure-reduced condition after performing pressure-reducing treatment; performing reduced-pressure releasing treatment that releases the resist film from a pressure-reduced condition while humidifying the resist film by introducing a humidity-adjusted gas into the pressure-reduced environment; performing bake treatment that heats the resist film after the reduced-pressure releasing treatment; and developing the resist film.
    Type: Grant
    Filed: March 16, 2009
    Date of Patent: June 12, 2012
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Eishi Shiobara, Shinichi Ito
  • Patent number: 8187797
    Abstract: A template having a first recess pattern is brought into contact with a mask material formed on a substrate. The mask material with which the first recess pattern is filled is cured. A mask material pattern is formed on the substrate by releasing the template from the mask material. A resist pattern is formed to cover a part of the mask material pattern by forming a resist on the mask material pattern and selectively irradiating radiation onto the resist and thereafter developing the resist. The substrate is processed by using the mask material pattern and the resist pattern as a mask.
    Type: Grant
    Filed: September 18, 2009
    Date of Patent: May 29, 2012
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Eishi Shiobara, Shinichi Ito
  • Patent number: 8158332
    Abstract: A method of fabricating a semiconductor device according to an embodiment includes: forming a first resist pattern made of a first resist material on a workpiece material; irradiating an energy beam onto the first resist pattern, the energy beam exposing the first resist material to light; performing a treatment for improving resistance the first resist pattern after irradiation of the energy beam; forming a coating film on the workpiece material so as to cover the first resist pattern; and forming a second resist pattern made of a second resist material on the coating film after the treatment.
    Type: Grant
    Filed: January 19, 2010
    Date of Patent: April 17, 2012
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Kentaro Matsunaga, Tomoya Oori, Eishi Shiobara
  • Patent number: 8097398
    Abstract: In the method for manufacturing a semiconductor device, a resist film is formed on a substrate and is processed to be provided with openings to form a first resist pattern. Additive-containing layers containing an additive that changes a state of the resist film to a soluble state for a developer are formed so as to cover the first resist pattern. A first resin film having a nature of changing to a soluble state for the developer by containing the additive is formed in the openings of the first resist pattern. The additive is diffused into the first resist pattern and the first resin film to form first and second additive-diffusing portions which can be solved in the developer. The first and second additive-diffusing portions are removed by the developer to form second resist pattern made of remaining portions in the first resist pattern and the first resin film.
    Type: Grant
    Filed: June 3, 2009
    Date of Patent: January 17, 2012
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Takehiro Kondoh, Eishi Shiobara
  • Patent number: 8080429
    Abstract: A method for evaluating chemical solution includes determining number of particles in liquid for each size of the particles by measurement, expressing a relationship between size of the particles and number of particles corresponding to the size by a function based on the number of particles for each size of the particles determined by the measurement, and evaluating influence of particles having size less than or equal to a measurement limit in the liquid based on the function.
    Type: Grant
    Filed: February 9, 2010
    Date of Patent: December 20, 2011
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Shinichi Ito, Eishi Shiobara
  • Publication number: 20110229826
    Abstract: This invention discloses a method to form a resist pattern on a to-be-processed substrate by immersion exposure. A resist film is formed on the central portion of the upper surface of the to-be-processed substrate, on a bevel portion of the upper surface, which is obtained by chamfering the peripheral portion of the to-be-processed substrate, and on the end portion of the to-be-processed substrate. Pattern exposure for forming the latent image of a desired pattern on the resist film is executed while a liquid whose refractive index is higher than that of air exists between the resist film and a constituent element of a projection optical system of an exposure apparatus, which is nearest to the to-be-processed substrate. The resist film formed on the end portion of the to-be-processed substrate is removed by supplying a rinse solution to the end portion of the to-be-processed substrate after executing pattern exposure.
    Type: Application
    Filed: May 31, 2011
    Publication date: September 22, 2011
    Inventors: Daisuke KAWAMURA, Eishi Shiobara, Tomoyuki Takeishi, Kei Hayasaki, Yasunobu Onishi, Shinichi Ito, Tatsuhiko Higashiki