Patents by Inventor Eishi Tsutsumi

Eishi Tsutsumi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20100236620
    Abstract: According to one aspect of the present invention, there is provided a thin film solar cell comprising a substrate, a photoelectric conversion layer formed on said substrate, said photoelectric conversion layer having a thickness of 1 ?m or less, and said photoelectric conversion layer comprising a p-type semiconductor layer, an n-type semiconductor layer, and are i-type semiconductor layer placed between said p-type semiconductor layer and said n-type semiconductor layer, a light-incident side electrode layer formed on a light-incident surface of said photoelectric conversion layer and a counter electrode layer formed on the surface opposite to the light-incident surface. Said light-incident side electrode layer has plural openings bored though said layer, and the thickness thereof is in the range of 10 nm to 200 nm. Each of said openings occupies an area of 80 nm2 to 0.8 ?m2. The opening ratio is in the range of 10% to 66%.
    Type: Application
    Filed: February 16, 2010
    Publication date: September 23, 2010
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Tsutomu NAKANISHI, Eishi Tsutsumi, Akira Fujimoto, Kumi Masunaga, Ryota Kitagawa, Koji Asakawa, Hideyuki Nishizawa
  • Publication number: 20100175749
    Abstract: A solar cell includes: a first electrode layer formed on a substrate; a generating layer formed on the first electrode layer; and a second electrode layer formed on the generating layer, at least one of the first electrode layer and the second electrode layer being a metal electrode layer having optical transparency, the metal electrode layer having a plurality of openings that penetrate through the metal electrode layer. The metal electrode layer includes metal parts, any two metal parts of the metal electrode layer continues to each other without a cut portion, the metal electrode layer has a film thickness in the range of 10 nm to 200 nm, and sizes of the openings are equal to or smaller than ½ of the wavelength of light to be used for generating electricity.
    Type: Application
    Filed: January 29, 2009
    Publication date: July 15, 2010
    Inventors: Eishi Tsutsumi, Tsutomu Nakanishi, Ryota Kitagawa, Akira Fujimoto, Koji Asakawa, Satoshi Mikoshiba
  • Publication number: 20090242925
    Abstract: The present invention provides a semiconductor light-emitting element comprising an electrode part excellent in ohmic contact and capable of emitting light from the whole surface. An electrode layer placed on the light-extraction side comprises a metal part and plural openings. The metal part is so continuous that any pair of point-positions in the part is continuously connected without breaks, and the metal part in 95% or more of the whole area continues linearly without breaks by the openings in a straight distance of not more than ? of the wavelength of light emitted from an active layer. The average opening diameter is of 10 nm to ? of the wavelength of emitted light. The electrode layer has a thickness of 10 nm to 200 nm, and is in good ohmic contact with a semiconductor layer.
    Type: Application
    Filed: January 30, 2009
    Publication date: October 1, 2009
    Inventors: Ryota KITAGAWA, Koji Asakawa, Akira Fujimoto, Tsutomu Nakanishi, Eishi Tsutsumi
  • Publication number: 20090236962
    Abstract: The Present invention provides an organic EL display and a lighting device having high efficiency. The organic EL display comprises a substrate, a pixel-driving circuit unit, and pixels arranged in the form of a matrix on the substrate. The pixel comprises a light-emitting part, and the light-emitting part is composed of a first electrode placed near to the substrate, a second electrode placed far from the substrate, and at least one organic layer placed between the first and second electrodes. The second electrode has a metal electrode layer having a thickness of 10 nm to 200 nm, and the metal electrode layer comprises a metal part and plural openings penetrating through the layer. The metal part is seamless and formed of metal continuously connected without breaks between any points therein.
    Type: Application
    Filed: February 25, 2009
    Publication date: September 24, 2009
    Inventors: Akira FUJIMOTO, Koji Asakawa, Tsutomu Nakanishi, Eishi Tsutsumi, Ryota Kitagawa
  • Publication number: 20090211783
    Abstract: The present invention provides a light-transmitting metal electrode including a substrate and a metal electrode layer having plural openings. The metal electrode layer also has such a continuous metal part that any pair of point-positions in the part is continuously connected without breaks. The openings in the metal electrode layer are periodically arranged to form plural microdomains. The plural microdomains are so placed that the in-plane arranging directions thereof are oriented independently of each other. The thickness of the metal electrode layer is in the range of 10 to 200 nm.
    Type: Application
    Filed: September 23, 2008
    Publication date: August 27, 2009
    Inventors: Eishi Tsutsumi, Tsutomu Nakanishi, Akira Fujimoto, Koji Asakawa
  • Publication number: 20090079322
    Abstract: The present invention provides a metal electrode transparent to light. The metal electrode comprises a transparent substrate and a metal electrode layer composed of a metal part and plural openings. The metal electrode layer continues without breaks, and 90% or more of the metal part continues linearly without breaks by the openings in a straight length of not more than ? of the visible wavelength to use in 380 nm to 780 nm. The openings have an average diameter in the range of not less than 10 nm and not more than ? of the wavelength of incident light, and the pitches between the centers of the openings are not less than the average diameter and not more than ½ of the wavelength of incident light. The metal electrode layer has a thickness in the range of not less than 10 nm and not more than 200 nm.
    Type: Application
    Filed: August 7, 2008
    Publication date: March 26, 2009
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Eishi TSUTSUMI, Akira Fujimoto, Koji Asakawa