Abstract: An operation method for cleaning a vacuum processing apparatus includes feeding a cleaning gas into a film deposition chamber of the vacuum processing apparatus when a predetermined number of batches of film deposition process is finished. The predetermined number of batch of film deposition processes is calculated based on a film deposition-related operating time (a film deposition time and a film deposition preparation time) and a cleaning-related operating time (a cleaning procedure time, a cleaning procedure preparation time, and a pre-deposition film deposition time).

Abstract: A large surface area photovoltaic device having high conversion efficiency and excellent mass productivity is provided. A photovoltaic device 100 having a photovoltaic layer 3 comprising a crystalline silicon layer formed on a substrate 1, wherein the crystalline silicon layer has a crystalline silicon i-layer 42, and the crystalline silicon i-layer 42 has a substrate in-plane distribution represented by an average value for the Raman peak ratio, which represents the ratio of the Raman peak intensity for the crystalline silicon phase relative to the Raman peak intensity for the amorphous silicon phase, that is not less than 4 and not more than 8, a standard deviation for the Raman peak ratio that is not less than 1 and not more than 3, and a proportion of regions in which the Raman peak ratio is not more than 4 of not less than 0% and not more than 15%.

Abstract: A vacuum processing apparatus includes a discharge chamber with a ridge waveguide having an exhaust-side ridge electrode and a substrate-side ridge electrode between which a plasma is formed; a pair of converters, which convert high-frequency power into TE mode, which represents the basic transmission mode of rectangular waveguides, for transmission to the discharge chamber, and form a plasma between the exhaust-side ridge electrode and the substrate-side ridge electrode; a uniform heating temperature controller, which is disposed on the outer surface of the substrate-side ridge electrode and heats the electrode uniformly; and a heat-absorbing temperature control unit, which is disposed on the outer surface of the exhaust-side ridge electrode and controls thermal flux through the thickness direction of a substrate undergoing plasma processing. The substrate is disposed between the exhaust-side ridge electrode and the substrate-side ridge electrode, and subjected to plasma processing.

Abstract: It is an object of the invention to provide a vacuum processing apparatus that enables setting a timing interval between self-cleaning procedures simply and so as to have general-use, enables significantly lengthening this timing interval, and improves the production efficiency. In a plasma CVD apparatus (100) that carries out self-cleaning procedure by feeding a cleaning gas into a film deposition chamber (1) in which film deposition processing is carried out on a substrate (4), the timing interval between self-cleaning procedures is set in a range in which a film deposition operating time ratio (Ps) is converged with respect to an increase in a film deposition process amount, where the film deposition operating time ratio (Ps) is represented by the proportion of a film deposition-related operating time (Tt) in the sum of the film deposition-related operating time (Tt) and a cleaning-related operating time (Tc).

Abstract: A large surface area photovoltaic device having high conversion efficiency and excellent mass productivity is provided. A photovoltaic device 100 having a photovoltaic layer 3 comprising a crystalline silicon layer formed on a substrate 1, wherein the crystalline silicon layer has a crystalline silicon i-layer 42, and the crystalline silicon i-layer 42 has a substrate in-plane distribution represented by an average value for the Raman peak ratio, which represents the ratio of the Raman peak intensity for the crystalline silicon phase relative to the Raman peak intensity for the amorphous silicon phase, that is not less than 4 and not more than 8, a standard deviation for the Raman peak ratio that is not less than 1 and not more than 3, and a proportion of regions in which the Raman peak ratio is not more than 4 of not less than 0% and not more than 15%.

Abstract: A solar panel has a substrate (1) and a plurality of photovoltaic cells (5). The substrate (1) has a first side (1a), a second side (1b), a third side (1c) and a fourth side (1d). The plurality of photovoltaic cells (5) are provided on the substrate (1), arranged parallel to the first side (1a), and connected in series one after another. The plurality of photovoltaic cells (5) have a first trench (15a) located adjacent to the first side (1a) and parallel to the first side (1a) and a second trench (15b) located adjacent to the second side (1b) and parallel to the second side (1b), while do not have a trench located adjacent to the third side (1c) and parallel to the third side (1c) and a trench located adjacent to the fourth side (1d) and parallel to the fourth side (1d).

Abstract: A plasma generation device for generating plasma uniformly over a large surface area by very high frequency (VHF), which is installed in a plasma chemical vapor deposition apparatus. A first and a second power supply section are installed on both ends of the discharge electrode installed in a plasma chemical vapor deposition apparatus, and are supplied with alternate cycles: the first cycle wherein the first and second power supply sections receive high frequency waves at the same frequency, and a second cycle wherein different high frequency waves are received. In this manner, the state of plasma generation may be varied in each cycle, and when averaged over time, it makes possible uniform plasma generation over a large surface area.

Abstract: This invention relates a plasma generation device for generating plasma uniformly over a large surface area by very high frequency (VHF), which is installed in a plasma chemical vapor deposition apparatus. The present invention installs a first and a second power supply section on both ends of the discharge electrode installed in plasma chemical vapor deposition apparatus, which are supplied with alternate cycles: the first cycle wherein the first and second power supply sections receive high frequency waves at the same frequency, and a second cycle wherein different high frequency waves are received. In this manner, the state of plasma generation may be varied in each cycle, and when averaged over time, it makes possible uniform plasma generation over a large surface area.

Abstract: A power generation system in a fuel cell having an air preheater for preheating air for a fuel cell reaction which will be fed to an afterburner of a high-temperature solid electrolyte type fuel cell, characterized by disposing, between the air preheater and the afterburner, a combustor for performing an additional combustion after the temperature of the air for the reaction has been elevated by the air preheater.