Abstract: A semiconductor device includes: a semiconductor substrate including a support substrate, a buried insulating film, and an active layer stacked in the stated order; a trench isolation portion disposed in the active layer and dividing the active layer into a plurality of regions including an extracting region; and a contact electrode disposed in a through hole that is provided from a main surface of the semiconductor substrate to reach the support substrate in the extracting region, and electrically connected to the support substrate. A minimum width of a portion of the contact electrode being in contact with the support substrate is wider than a minimum width of a portion of the contact electrode located in the active layer.

Abstract: In a semiconductor device, an insulating film is disposed between an upper surface of a substrate and a floating gate of a flash memory, a first oxide film is disposed directly above the floating gate, a silicon nitride film is disposed on an upper surface of the first oxide film, and a second oxide film made of silicon oxide film is disposed on an upper surface of the silicon nitride film.

Abstract: In a semiconductor device, an insulating film is disposed between an upper surface of a substrate and a floating gate of a flash memory, a first oxide film is disposed directly above the floating gate, a silicon nitride film is disposed on an upper surface of the first oxide film, and a second oxide film made of silicon oxide film is disposed on an upper surface of the silicon nitride film.