Abstract: A semiconductor light emitting element includes a laminated semiconductor layer including a light emitting layer that emits light by passing a current, the laminated semiconductor layer has a lower semiconductor bottom surface, a semiconductor side surface that rises from an edge of the lower semiconductor bottom surface upwardly and outwardly of the laminated semiconductor layer, and a lower semiconductor top surface that faces upward by extending inwardly of the laminated semiconductor layer from an upper edge of the semiconductor side surface, an edge of the lower semiconductor top surface includes first and second linear portions extending linearly and plural connecting portions connecting the first and second linear portions, and, when viewed from a direction perpendicular to the lower semiconductor top surface, each connecting portion is positioned inside a point of intersection of extended lines of the first and second linear portions connected to the connecting portion.

Abstract: A semiconductor light emitting element (1) includes; an n-type semiconductor layer (120), a light emitting layer (130), a p-type semiconductor layer (140), a p-side power supply portion (150), and an n-side power supply portion (160) that includes an n-side power supply electrode (162), an n-side auxiliary electrode (163) and n-side connective electrodes (164). The n-side power supply electrode (162) and auxiliary electrode (163) are provided in the inner side beyond the p-type semiconductor layer (140) viewed from the light emitting layer (130). On the p-type semiconductor layer (140), a power supply insulating layer (170) transparent to light from the light emitting layer (130) is provided, and portions at lower side of the n-side power supply electrode (162) and auxiliary electrode (163) are set to have a thickness with which the light is easily reflected, and other portions are set to have a thickness with which the light is easily transmitted.

Abstract: A semiconductor light emitting element suppressing non-uniformity in light emission on a light emitting surface is provided. An n-type semiconductor layer, a light emitting layer and a p-type semiconductor layer are laminated in order, and a translucent electrode film is laminated on the p-type semiconductor layer and a p-electrode is provided on the translucent electrode film. On the other hand, an n-electrode is provided on a semiconductor layer exposure surface that exposes the n-type semiconductor layer. The p-electrode includes a connecting portion having a circular planar shape and an extending portion that extends like a long and slender strip from the connecting portion to encircle and face the n-electrode. Holes in the translucent electrode film are provided such that the density thereof is decreased along with a move from the n-electrode side toward the p-electrode side.

Abstract: A semiconductor light emitting element (1) includes; an n-type semiconductor layer (120), a light emitting layer (130), a p-type semiconductor layer (140), a p-side power supply portion (150), and an n-side power supply portion (160) that includes an n-side power supply electrode (162), an n-side auxiliary electrode (163) and n-side connective electrodes (164). The n-side power supply electrode (162) and auxiliary electrode (163) are provided in the inner side beyond the p-type semiconductor layer (140) viewed from the light emitting layer (130). On the p-type semiconductor layer (140), a power supply insulating layer (170) transparent to light from the light emitting layer (130) is provided, and portions at lower side of the n-side power supply electrode (162) and auxiliary electrode (163) are set to have a thickness with which the light is easily reflected, and other portions are set to have a thickness with which the light is easily transmitted.

Abstract: A semiconductor light emitting element includes a laminated semiconductor layer including a light emitting layer that emits light by passing a current, the laminated semiconductor layer has a lower semiconductor bottom surface, a semiconductor side surface that rises from an edge of the lower semiconductor bottom surface upwardly and outwardly of the laminated semiconductor layer, and a lower semiconductor top surface that faces upward by extending inwardly of the laminated semiconductor layer from an upper edge of the semiconductor side surface, an edge of the lower semiconductor top surface includes first and second linear portions extending linearly and plural connecting portions connecting the first and second linear portions, and, when viewed from a direction perpendicular to the lower semiconductor top surface, each connecting portion is positioned inside a point of intersection of extended lines of the first and second linear portions connected to the connecting portion.

Abstract: A semiconductor light emitting element suppressing non-uniformity in light emission on a light emitting surface is provided. An n-type semiconductor layer, a light emitting layer and a p-type semiconductor layer are laminated in order, and a translucent electrode film is laminated on the p-type semiconductor layer and a p-electrode is provided on the translucent electrode film. On the other hand, an n-electrode is provided on a semiconductor layer exposure surface that exposes the n-type semiconductor layer. The p-electrode includes a connecting portion having a circular planar shape and an extending portion that extends like a long and slender strip from the connecting portion to encircle and face the n-electrode. Holes in the translucent electrode film are provided such that the density thereof is decreased along with a move from the n-electrode side toward the p-electrode side.

Abstract: There is provided a light-emitting element in which the driving voltage is reduced and light extraction efficiency is improved, a method of manufacturing the light-emitting element, a lamp, electronic equipment, and a mechanical apparatus. This is achieved by using a light-emitting element (1) which includes an n-type semiconductor layer (12), a light emission layer (13), a p-type semiconductor layer (14), and a titanium oxide-based conductive film layer (15), laminated in order on one face of a substrate (11), wherein a first oxide containing an element that is any one of In, Al, and Ga and a second oxide containing either Zn or Sn are present between the p-type semiconductor layer (14) and the titanium oxide-based conductive film layer (15), and the mass ratio of the second oxide to the total of the first oxide and the second oxide is in a range of 1 to 20 mass %.

Abstract: A link for a watch band and a bracelet, comprising a plurality of link elements each having a substantially S-shaped configuration and including a face arm facing a face of the link and having a joining portion and a back arm facing a back of the link and having a joining portion, at least one of the link elements being disposed in a direction opposite to that of the other link elements.

Abstract: In a mechano-pneumatic timer device having a vessel, a membrane piston with its skirt fixedly attached to the vessel for defining jointly a variable volume chamber, a spring for urging the piston in its expanding direction, a check valve cooperating with the piston for evacuating air from the chamber to the outside atmosphere when the piston is contracted, a passage for supplementing air from open atmosphere to the chamber when negative pressure prevails in the chamber by virtue of the expanding movement of the piston for a performing predetermined time-limiting operation of the timer, and a device cooperating with the passage for allowing a limited flow rate of the air drawn by the piston, with the device consisting of a composite sheet having a main body formed lengthwise of pervious material such as foamed synthetic resin and a non-pervious cover layer integral with the main body in facial engagement with the passage.