Patents by Inventor Eitan Hajaj
Eitan Hajaj has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240118606Abstract: A method for semiconductor metrology includes depositing first and second overlying film layers on a semiconductor substrate and patterning the layers to define an overlay target. The target includes a first grating pattern in the first layer, including at least a first linear grating oriented in a first direction and at least a second linear grating oriented in a second direction perpendicular to the first direction, and a second grating pattern in the second layer, including at least a third linear grating identical to the first linear grating and a fourth linear grating identical to the second linear grating. The second grating pattern has a nominal offset relative to the first grating pattern by first and second displacements in the first and second directions, respectively. A scatterometric image of the substrate is captured and processed to estimate an overlay error between the patterning of the first and second layers.Type: ApplicationFiled: October 6, 2022Publication date: April 11, 2024Inventors: Itay GDOR, Yuval LUBASHEVSKY, Daria NEGRI, Eitan HAJAJ, Vladimir LEVINSKI
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Publication number: 20240068804Abstract: An overlay metrology system with pitches in multiple directions in a single cell is disclosed. The overlay target may, according to a metrology recipe, include a multi-layer structure on two or more layers of a cell of the sample. The multi-layer structure may include structures in each layer having one or more pitches in one or more directions of periodicity. The multi-layer structure may include structures with a first pitch in a first direction, a second pitch in a second direction, a third pitch in the first direction, and a fourth pitch in the second direction. At least one of the first pitch or the third pitch may be different than at least one of the second pitch or the fourth pitch.Type: ApplicationFiled: August 16, 2023Publication date: February 29, 2024Inventors: Yuval Lubashevsky, Itay Gdor, Daria Negri, Eitan Hajaj
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Patent number: 11862524Abstract: The present disclosure provides a target and a method of performing overlay measurements on a target. The target includes an array of cells comprising a first cell, a second cell, a third cell, and a fourth cell. Each cell includes a periodic structure with a pitch. The periodic structure includes a first section and a second section, separated by a first gap. The target further includes an electron beam overlay target, such that electron beam overlay measurements, advanced imaging metrology, and/or scatterometry measurements can be performed on the target.Type: GrantFiled: September 28, 2021Date of Patent: January 2, 2024Inventors: Inna Steely-Tarshish, Stefan Eyring, Mark Ghinovker, Yoel Feler, Eitan Hajaj, Ulrich Pohlmann, Nadav Gutman, Chris Steely, Raviv Yohanan, Ira Naot
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Patent number: 11796925Abstract: An overlay metrology system may include an illumination source and illumination optics to illuminate an overlay target on a sample with illumination from the illumination source as the sample is in motion with respect to the illumination from the illumination source in accordance with a measurement recipe. The overlay target may include one or more cells, where a single cell is suitable for measurement along a particular direction. Such a cell may include two or more gratings with different pitches. Further, the system may include two or more photodetectors, each configured to capture three diffraction lobes from the two or more grating structures. The system may further include a controller to determine an overlay measurement associated with each cell of the overlay target.Type: GrantFiled: March 30, 2022Date of Patent: October 24, 2023Assignee: KLA CorporationInventors: Yuval Lubashevsky, Itay Gdor, Daria Negri, Eitan Hajaj
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Publication number: 20230324810Abstract: Electron beam overlay targets and method of performing overlay measurements on a target using a semiconductor metrology tool are provided. One target includes a plurality of electron beam overlay elements and a plurality of two-dimensional elements that provide at least one two-dimensional imaging. The plurality of two dimensional elements are an array of evenly-spaced polygonal gratings across at least three rows and at least three columns. Another target includes a plurality of electron beam overlay elements and a plurality of AIMid elements. Each of the electron beam overlay elements includes at least two gratings that are overlaid at a perpendicular orientation to each other. The plurality of AIMid elements includes at least two gratings that are overlaid at a perpendicular orientation to each other.Type: ApplicationFiled: June 1, 2023Publication date: October 12, 2023Inventors: Inna Steely-Tarshish, Stefan Eyring, Mark Ghinovker, Yoel Feler, Eitan Hajaj, Ulrich Pohlmann, Nadav Gutman, Chris Steely, Raviv Yohanan, Ira Naot
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Patent number: 11726410Abstract: A product includes at least one semiconductor substrate, multiple thin-film layers disposed on the at least one substrate, and an overlay target formed in at least one of the thin-film layers. The overlay target includes a first sub-target having a first center of symmetry and including first target features having a first linewidth, and a second sub-target having a second center of symmetry coincident with the first center of symmetry and including second target features, which have a second linewidth, greater than the first linewidth, and are adjacent to but non-overlapping with the first target features.Type: GrantFiled: June 17, 2021Date of Patent: August 15, 2023Assignee: KLA CorporationInventors: Eitan Hajaj, Amnon Manassen, Shlomo Eisenbach, Anna Golotsvan, Yoav Grauer, Eugene Maslovsky
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Patent number: 11720031Abstract: Combined electron beam overlay and scatterometry overlay targets include first and second periodic structures with gratings. Gratings in the second periodic structure can be positioned under the gratings of the first periodic structure or can be positioned between the gratings of the first periodic structure. These overlay targets can be used in semiconductor manufacturing.Type: GrantFiled: September 28, 2021Date of Patent: August 8, 2023Assignee: KLA CorporationInventors: Inna Steely-Tarshish, Stefan Eyring, Mark Ghinovker, Yoel Feler, Eitan Hajaj, Ulrich Pohlmann, Nadav Gutman, Chris Steely, Raviv Yohanan, Ira Naot
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Patent number: 11703767Abstract: Electron beam overlay targets and method of performing overlay measurements on a target using a semiconductor metrology tool are provided. One target includes a plurality of electron beam overlay elements and a plurality of two-dimensional elements that provide at least one two-dimensional imaging. The plurality of two dimensional elements are an array of evenly-spaced polygonal gratings across at least three rows and at least three columns. Another target includes a plurality of electron beam overlay elements and a plurality of AIMid elements. Each of the electron beam overlay elements includes at least two gratings that are overlaid at a perpendicular orientation to each other. The plurality of AIMid elements includes at least two gratings that are overlaid at a perpendicular orientation to each other.Type: GrantFiled: September 28, 2021Date of Patent: July 18, 2023Inventors: Inna Steely-Tarshish, Stefan Eyring, Mark Ghinovker, Yoel Feier, Eitan Hajaj, Ulrich Pohlmann, Nadav Gutman, Chris Steely, Raviv Yohanan, Ira Naot
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Publication number: 20230213875Abstract: An overlay metrology system may include an illumination source and illumination optics to illuminate an overlay target on a sample with illumination from the illumination source as the sample is in motion with respect to the illumination from the illumination source in accordance with a measurement recipe. The overlay target may include one or more cells, where a single cell is suitable for measurement along a particular direction. Such a cell may include two or more gratings with different pitches. Further, the system may include two or more photodetectors, each configured to capture three diffraction lobes from the two or more grating structures. The system may further include a controller to determine an overlay measurement associated with each cell of the overlay target.Type: ApplicationFiled: March 30, 2022Publication date: July 6, 2023Inventors: Yuval Lubashevsky, Itay Gdor, Daria Negri, Eitan Hajaj
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Patent number: 11676909Abstract: A metrology target for use in measuring misregistration between layers of a semiconductor device including a first target structure placed on a first layer of a semiconductor device, the first target structure including a first plurality of unitary elements respectively located in at least four regions of the first target structure, the first plurality of elements being rotationally symmetric with respect to a first center of symmetry and at least a second target structure placed on at least a second layer of the semiconductor device, the second target structure including a second plurality of elements respectively located in at least four regions of the second target structure, the second plurality of elements being rotationally symmetric with respect to a second center of symmetry, the second center of symmetry being designed to be axially aligned with the first center of symmetry and corresponding ones of the second plurality of elements being located adjacent corresponding ones of the first plurality of eType: GrantFiled: May 5, 2020Date of Patent: June 13, 2023Assignee: KLA CorporationInventors: Eitan Hajaj, Yoav Grauer
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Publication number: 20220413394Abstract: Combined electron beam overlay and scatterometry overlay targets include first and second periodic structures with gratings. Gratings in the second periodic structure can be positioned under the gratings of the first periodic structure or can be positioned between the gratings of the first periodic structure. These overlay targets can be used in semiconductor manufacturing.Type: ApplicationFiled: September 28, 2021Publication date: December 29, 2022Inventors: Inna Steely-Tarshish, Stefan Eyring, Mark Ghinovker, Yoel Feler, Eitan Hajaj, Ulrich Pohlmann, Nadav Gutman, Chris Steely, Raviv Yohanan, Ira Naot
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Publication number: 20220415725Abstract: The present disclosure provides a target and a method of performing overlay measurements on a target. The target includes an array of cells comprising a first cell, a second cell, a third cell, and a fourth cell. Each cell includes a periodic structure with a pitch. The periodic structure includes a first section and a second section, separated by a first gap. The target further includes an electron beam overlay target, such that electron beam overlay measurements, advanced imaging metrology, and/or scatterometry measurements can be performed on the target.Type: ApplicationFiled: September 28, 2021Publication date: December 29, 2022Inventors: Inna Steely-Tarshish, Stefan Eyring, Mark Ghinovker, Yoel Feler, Eitan Hajaj, Ulrich Pohlmann, Nadav Gutman, Chris Steely, Raviv Yohanan, Ira Naot
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Publication number: 20220413395Abstract: Electron beam overlay targets and method of performing overlay measurements on a target using a semiconductor metrology tool are provided. One target includes a plurality of electron beam overlay elements and a plurality of two-dimensional elements that provide at least one two-dimensional imaging. The plurality of two dimensional elements are an array of evenly-spaced polygonal gratings across at least three rows and at least three columns. Another target includes a plurality of electron beam overlay elements and a plurality of AIMid elements. Each of the electron beam overlay elements includes at least two gratings that are overlaid at a perpendicular orientation to each other. The plurality of AIMid elements includes at least two gratings that are overlaid at a perpendicular orientation to each other.Type: ApplicationFiled: September 28, 2021Publication date: December 29, 2022Inventors: Inna Steely-Tarshish, Stefan Eyring, Mark Ghinovker, Yoel Feler, Eitan Hajaj, Ulrich Pohlmann, Nadav Gutman, Chris Steely, Raviv Yohanan, Ira Naot
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Publication number: 20220334501Abstract: A product includes at least one semiconductor substrate, multiple thin-film layers disposed on the at least one substrate, and an overlay target formed in at least one of the thin-film layers. The overlay target includes a first sub-target having a first center of symmetry and including first target features having a first linewidth, and a second sub-target having a second center of symmetry coincident with the first center of symmetry and including second target features, which have a second linewidth, greater than the first linewidth, and are adjacent to but non-overlapping with the first target features.Type: ApplicationFiled: June 17, 2021Publication date: October 20, 2022Inventors: Eitan Hajaj, Amnon Manassen, Shlomo Eisenbach, Anna Golotsvan, Yoav Grauer, Eugene Maslovsky
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Publication number: 20220291143Abstract: An optical metrology tool may include one or more illumination sources to generate illumination having wavelengths both within a short-wave infrared (SWIR) spectral range and outside the SWIR spectral range, illumination optics configured to direct the illumination to a sample, a first imaging channel including a first detector configured to image the sample based on a first wavelength range including at least some wavelengths in the SWIR spectral range, a second imaging channel including a second detector configured to image the sample based on a second wavelength range including at least some wavelengths outside the SWIR spectral range, and a controller. The controller may receive first images of the sample from the first detector, receive second images of the sample from the second detector, and generate an optical metrology measurement of the sample based on the first and second images.Type: ApplicationFiled: April 29, 2021Publication date: September 15, 2022Inventors: Amnon Manassen, Isaac Salib, Raviv YOHANAN, Diana Shaphirov, Eitan Hajaj, Vladimir Levinski, Avi Abramov, Michael Shentcis, Ariel Hildesheim, Yoav Grauer, Shlomo Eisenbach, Etay Lavert, Iftach Nir
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Publication number: 20220020695Abstract: A metrology target for use in measuring misregistration between layers of a semiconductor device including a first target structure placed on a first layer of a semiconductor device, the first target structure including a first plurality of unitary elements respectively located in at least four regions of the first target structure, the first plurality of elements being rotationally symmetric with respect to a first center of symmetry and at least a second target structure placed on at least a second layer of the semiconductor device, the second target structure including a second plurality of elements respectively located in at least four regions of the second target structure, the second plurality of elements being rotationally symmetric with respect to a second center of symmetry, the second center of symmetry being designed to be axially aligned with the first center of symmetry and corresponding ones of the second plurality of elements being located adjacent corresponding ones of the first plurality of eType: ApplicationFiled: May 5, 2020Publication date: January 20, 2022Inventors: Eitan Hajaj, Yoav Grauer
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Patent number: 10837919Abstract: Scatterometry overlay (SCOL) single cell targets are provided, along with target design methods and measurement methods which employ the single cell SCOL targets for in-die metrology measurements, utilizing the small size of the target along with maintained optical performance due to the design of the target. Disclosed single cell targets comprise a lattice of elements at two or more layers which is periodic two or more measurement directions. Elements in different layers are offset with respect to each other and may have the same pitch along the measurement directions. Measurement algorithms are also provided to derive metrology measurements such as overlays from the single cell targets, possibly simultaneously in both (or more) measurement directions, reducing measurement time and enhancing the metrology throughput. Positioning the small targets in-die provides more accurate metrology results which are less sensitive to process variation.Type: GrantFiled: September 24, 2018Date of Patent: November 17, 2020Assignee: KLA CorporationInventor: Eitan Hajaj
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Patent number: 10579768Abstract: Metrology targets and target design methods are provided, in which target elements are defined by replacing elements from a periodic pattern having a pitch p, by assist elements having at least one geometric difference from the replaced elements, to form a composite periodic structure that maintains the pitch p as a single pitch. Constructing targets within the bounds of compatibility with advanced multiple patterning techniques improves the fidelity of the targets and fill factor modulation enables adjustment of the targets to produce sufficient metrology sensitivity for extracting the overlay while achieving process compatibility of the targets.Type: GrantFiled: November 4, 2016Date of Patent: March 3, 2020Assignee: KLA-Tencor CorporationInventors: Vladimir Levinski, Eitan Hajaj, Tal Itzkovich, Sharon Aharon, Michael E. Adel, Yuri Paskover, Daria Negri, Yuval Lubashevsky, Amnon Manassen, Myungjun Lee, Mark D. Smith
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Publication number: 20190137412Abstract: Scatterometry overlay (SCOL) single cell targets are provided, along with target design methods and measurement methods which employ the single cell SCOL targets for in-die metrology measurements, utilizing the small size of the target along with maintained optical performance due to the design of the target. Disclosed single cell targets comprise a lattice of elements at two or more layers which is periodic two or more measurement directions. Elements in different layers are offset with respect to each other and may have the same pitch along the measurement directions. Measurement algorithms are also provided to derive metrology measurements such as overlays from the single cell targets, possibly simultaneously in both (or more) measurement directions, reducing measurement time and enhancing the metrology throughput. Positioning the small targets in-die provides more accurate metrology results which are less sensitive to process variation.Type: ApplicationFiled: September 24, 2018Publication date: May 9, 2019Inventor: Eitan Hajaj
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Publication number: 20180157784Abstract: Metrology targets and target design methods are provided, in which target elements are defined by replacing elements from a periodic pattern having a pitch p, by assist elements having at least one geometric difference from the replaced elements, to form a composite periodic structure that maintains the pitch p as a single pitch. Constructing targets within the bounds of compatibility with advanced multiple patterning techniques improves the fidelity of the targets and fill factor modulation enables adjustment of the targets to produce sufficient metrology sensitivity for extracting the overlay while achieving process compatibility of the targets.Type: ApplicationFiled: November 4, 2016Publication date: June 7, 2018Inventors: Vladimir Levinski, Eitan Hajaj, Tal Itzkovich, Sharon Aharon, Michael E. Adel, Yuri Paskover, Daria Negri, Yuval Lubashevsky, Amnon Manassen, Myungjun Lee, Mark D. Smith