Patents by Inventor Eitaroh MORIMOTO

Eitaroh MORIMOTO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Electronic component manufacturing method and electrode structure
    Patent number: 9437702
    Abstract: It is an object of the present invention to provide an electronic component manufacturing method, capable of suppressing reduction in a trench opening and suppressing diffusion of a metal film embedded in a trench. An embodiment of the present invention is an electronic component manufacturing method, including the steps of: forming a first electrode constituting layer (e.g., a TiAl film) in a recess (e.g., a trench) formed in a workpiece; forming an ultrathin barrier layer (e.g., a TiAlN film) by forming a nitride layer by plasma-nitriding a surface of the first electrode constituting layer; and forming a second electrode constituting layer (e.g., an Al wiring layer) on the ultrathin barrier layer.
    Type: Grant
    Filed: July 10, 2014
    Date of Patent: September 6, 2016
    Assignee: CANON ANELVA CORPORATION
    Inventors: Akira Matsuo, Yohsuke Shibuya, Naomu Kitano, Eitaroh Morimoto, Koji Yamazaki, Yu Sato, Takuya Seino
  • ELECTRONIC COMPONENT MANUFACTURING METHOD AND ELECTRODE STRUCTURE
    Publication number: 20140319676
    Abstract: It is an object of the present invention to provide an electronic component manufacturing method, capable of suppressing reduction in a trench opening and suppressing diffusion of a metal film embedded in a trench. An embodiment of the present invention is an electronic component manufacturing method, including the steps of: forming a first electrode constituting layer (e.g., a TiAl film) in a recess (e.g., a trench) formed in a workpiece; forming an ultrathin barrier layer (e.g., a TiAlN film) by forming a nitride layer by plasma-nitriding a surface of the first electrode constituting layer; and forming a second electrode constituting layer (e.g., an Al wiring layer) on the ultrathin barrier layer.
    Type: Application
    Filed: July 10, 2014
    Publication date: October 30, 2014
    Inventors: Akira MATSUO, Yohsuke SHIBUYA, Naomu KITANO, Eitaroh MORIMOTO, Koji YAMAZAKI, Yu SATO, Takuya SEINO