Abstract: The present invention relates to a semiconductor memory device, and more particularly to a dynamic random access memory for accomplishing high speed data access by supplying a plurality of row address strobe signals to a chip. A plurality of row address strobe signals are supplied to a plurality of pins, and each row address strobe signal is sequentially supplied with an active signal during a data access operation. Therefore, data in a plurality of memory cell arrays is accessed during one access cycle time. Thus, since a large number of random data are provided, the data access time decreases and the performance of a system can be greatly improved.

Abstract: Memory arrays of non-binary physical dimensions are disclosed. A novel addressing scheme provides that multiple word lines are activated in response to each received address code. Generally, at least two physical block rows containing blocks of an addressed logical block row are activated in response to each address. Block rows containing redundant blocks are activated in response to every address. In a specific embodiment, a 1 M-bit array arranged in 11 rows of blocks and 6 columns of blocks functions as an 8.times.8 block logical array, with two blocks available for redundancy. The availablity of non-binary physical arrays affords a designer new flexibility in meeting packaging constraints and redundancy specifications.

Abstract: A multi-stage output buffer provides for inactivation and then delayed reactivation of a second gain stage after a data transition. The delay imposed is a function of the output voltage, which is fed back through a threshold detector. A transition detector is coupled to data inputs so that it can inactivate the second gain stage upon a data transition; the transition detector is coupled to the threshold detector so that it can activate the second gain stage once the output voltage crosses a predetermined threshold voltage. This configuration imposes relatively long delays on second gain stage activation when large loads are applied to keep switching transients at tolerable levels. When lesser loads are applied, a shorter delay permits more rapid throughput.