Abstract: The present invention discloses a film formation device. The film formation device includes a vacuum chamber, an evacuation mechanism communicating with an interior of the vacuum chamber, a substrate holding means capable of holding a plurality of substrates, and a film formation area located in the interior of the vacuum chamber. The film formation area allows sputter ions to be emitted from a target by sputtering and arrive at the substrates. The film formation device further includes an isolation means located in the vacuum chamber. The isolation means isolates the film formation area from other areas in the vacuum chamber. The isolation means is arranged such that the film formation area communicates with an exterior of the film formation area.

Abstract: A method for forming a thin film having durability at a low cost is provided. A film formation apparatus 1 is used in the film formation method. The apparatus 1 comprises a vacuum container 11 in which a substrate 100 is placed at a lower part, a vacuum pump 15 for exhaust inside the container 11, a storage container 23 for storing a coating agent 21 provided outside the container 11, and a nozzle having an ejection part 19 capable of ejecting the coating agent 21 at its one end. A solution including two or more kinds of materials is used as the coating agent 21. The solution is ejected to the substrate in an atmosphere at a pressure set based on vapor pressures of respective materials composing the solution.

Abstract: The present invention discloses a film formation device and a film formation method for film formation of thin films. The film formation device includes a vacuum chamber, an evacuation mechanism that is connected to the vacuum chamber and evacuates the vacuum chamber, a substrate holding mechanism that holds a substrate in the vacuum chamber, a film formation mechanism that is disposed in the vacuum chamber, and an introduction mechanism that is connected to the vacuum chamber and capable of introducing a hydroxyl group-containing gas into the vacuum chamber during film formation by the film formation mechanism.

Abstract: Provided are a thin film formation apparatus, a sputtering cathode, and a method of forming thin film, capable of forming a multilayer optical film at a high film deposition rate on a large-sized substrate. The thin film formation apparatus forms a thin film of a metal compound on a substrate in a vacuum chamber by sputtering. The vacuum chamber is provided in its inside with targets composed of metal or a conductive metal compound, and an active species source for generating an active species of a reactive gas. The active species source is provided with gas sources for supplying the reactive gas, and an energy source for supplying energy into the vacuum chamber to excite the reactive gas to a plasma state. The energy source is provided between itself and the vacuum chamber with a dielectric window for supplying the energy into the vacuum chamber.

Abstract: The method for depositing a film of the present invention includes the first film deposition step of depositing a first film 103 having hardness higher than hardness of a substrate 101 on a surface of the substrate 101, the first irradiation step of irradiating particles having energy on the first film 103, and the second film deposition step of depositing an oil-repellent film 105 on a surface of the first film 103 subjected to the first irradiation step. A method for depositing a film enabling production of an oil-repellent substrate includes an oil-repellent film having abrasion resistance of a practically sufficient level can be provided.

Abstract: A magnetic field generator arranged behind a target and for generating a magnetic field on a front surface of the target based on magnetic force lines can include a ring-shaped outer magnetic body having a pole axis in a parallel direction (X-direction) with respect to the target surface, a center magnetic body arranged on an inner side of the outer magnetic body and having a pole axis in a parallel direction (X-direction) with the direction of the pole axis of the outer magnetic body, a yoke plate for supporting the outer magnetic body and the center magnetic body from behind, and a magnetic permeable plate for changing a magnetic field distribution of the front surface of the target. The magnetic permeable plate is arranged so as to be supported by the yoke plate from behind.

Abstract: A method for forming a thin film having durability at a low cost is provided. A film formation apparatus 1 is used in the film formation method. The apparatus 1 comprises a vacuum container 11 in which a substrate 100 is placed at a lower part, a vacuum pump 15 for exhaust inside the container 11, a storage container 23 for storing a coating agent 21 provided outside the container 11, and a nozzle having an ejection part 19 capable of ejecting the coating agent 21 at its one end. A solution including two or more kinds of materials including a first material (S1) and a second material (S2) having a higher vapor pressure (P2) than a vapor pressure (P1) of the Si is used as the coating agent 21. The coating agent 21 is ejected to the substrate in an atmosphere with a pressure higher than P1 and lower than P2.

Abstract: A method for forming a thin film having durability at a low cost is provided. A film formation apparatus 1 is used in the film formation method. The apparatus 1 comprises a vacuum container 11 in which a substrate 100 is placed at a lower part, a vacuum pump 15 for exhaust inside the container 11, a storage container 23 for storing a coating agent 21 provided outside the container 11, and a nozzle having an ejection part 19 capable of ejecting the coating agent 21 at its one end. A solution including two or more kinds of materials is used as the coating agent 21. The solution is ejected to the substrate in an atmosphere at a pressure set based on vapor pressures of respective materials composing the solution.

Abstract: A method for forming a thin film having durability at a low cost is provided. A film formation apparatus 1 is used in the film formation method. The apparatus 1 comprises a vacuum container 11, in which a substrate 100 is placed at a lower part, a vacuum pump 15 for exhaust inside the container 11, a storage container 23 for storing a coating agent 21 provided outside the container 11, a nozzle having an ejection part 19 capable of ejecting the coating agent 21 at its one end and a pressurizing means (a gas supply source 29, etc.) for pressurizing a liquid surface of a coating agent 21 stored in the storage container 23. A solution, which includes two or more kinds of materials including a first material (S1) and a second material (S2) having a higher vapor pressure (P2) than a vapor pressure (P1) of the S1 and has a concentration of the first material being 0.01 wt % or more, is used as the coating agent 21.

Abstract: Provided is a thin film forming apparatus for reducing operation time and cost by forming a film only on a specific portion on substrates. A substrate holding mechanism provided in the apparatus includes: substrate holding members holding substrates in a manner that a part of a non-film forming portion of a substrate overlaps the other substrate and a film forming portion is exposed, a support member supporting the substrate holding members, and a rotation member which rotates the support member. The substrate holding members include: holding surfaces holding the substrates and disposed between a film forming source and the substrates, step portions formed between the holding surfaces in a manner that ends of the substrates respectively contact with the step portions, and opening portions formed on the holding surfaces of the portion corresponding to the film forming portion when the ends of the substrates contact with the step portions.

Abstract: The method for depositing a film of the present invention comprises the first film deposition step of depositing a first film 103 having hardness higher than hardness of a substrate 101 on a surface of the substrate 101, the first irradiation step of irradiating particles having energy on the first film 103, and the second film deposition step of depositing an oil-repellent film 105 on a surface of the first film 103 subjected to the first irradiation step. According to the present invention, a method for depositing a film enabling production of an oil-repellent substrate comprising an oil-repellent film having abrasion resistance of a practically sufficient level can be provided.

Abstract: The method for depositing a film of the present invention comprises the first irradiation step of irradiating particles having energy on a surface of a substrate 101, the first film deposition step of depositing a first film 103 on the surface of the substrate 101 subjected to the first irradiation step by using a dry process, and the second film deposition step of depositing a second film 105 having oil repellency on a surface of the first film 103. According to the present invention, a method for depositing a film enabling production of an oil-repellent substrate comprising an oil-repellent film having abrasion resistance of a practically sufficient level can be provided.

Abstract: The method for depositing a film of the present invention comprises the first film deposition step of depositing a first film 103 having hardness higher than hardness of a substrate 101 on a surface of the substrate 101, the first irradiation step of irradiating particles having energy on the first film 103, and the second film deposition step of depositing an oil-repellent film 105 on a surface of the first film 103 subjected to the first irradiation step. According to the present invention, a method for depositing a film enabling production of an oil-repellent substrate comprising an oil-repellent film having abrasion resistance of a practically sufficient level can be provided.

Abstract: A film deposition method of a silicon carbide thin film having a high transmissivity and high film strength applicable for optical use purposes is provided. The film can be formed safely and efficiently in a short time and on a low heat resistance substrate. The method can include depositing a silicon carbide thin film on a moving substrate by using a film formation apparatus configured such that a reaction process region and film formation process regions are arranged spatially separated from one another in a vacuum container. Silicon targets can be sputtered in one region and carbon targets can be sputtered in another region. Thereby, an interlayer thin film containing silicon and carbon is formed on the substrate. Next, in another region, the interlayer thin film can be exposed to plasma generated in an atmosphere of a mixed gas including inert gas and hydrogen.

Abstract: Provided are a thin film formation apparatus, a sputtering cathode, and a method of forming thin film, capable of forming a multilayer optical film at a high film deposition rate on a large-sized substrate. The thin film formation apparatus forms a thin film of a metal compound on a substrate in a vacuum chamber by sputtering. The vacuum chamber is provided in its inside with targets composed of metal or a conductive metal compound, and an active species source for generating an active species of a reactive gas. The active species source is provided with gas sources for supplying the reactive gas, and an energy source for supplying energy into the vacuum chamber to excite the reactive gas to a plasma state. The energy source is provided between itself and the vacuum chamber with a dielectric window for supplying the energy into the vacuum chamber.

Abstract: An optical thin-film vapor deposition apparatus and method are capable of producing an optical thin-film by vapor depositing a vapor deposition substance onto substrates (14) within a vacuum vessel (10). A dome shaped holder (12) is disposed within the vacuum vessel (10) and holds the substrates (14). A drive rotates the dome shaped holder (12). A vapor depositing source (34) is disposed oppositely to the substrates (14). An ion source (38) irradiates ions to the substrates (14). A neutralizer (40) irradiates electrons to the substrates (14). The ion source (38) is disposed at an angle between an axis, along which ions are irradiated from the ion source (38), and a line perpendicular to a surface of each of the substrates (14). The angle is between 8° inclusive and 40° inclusive. A ratio of a distance in a vertical direction between (i) a center of rotational axis of the dome shaped holder (12), and (ii) a center of the ion source (38), relative to a diameter of the dome shaped holder (12), is between 0.

Abstract: Provided is a film formation apparatus with which an anti-fouling film having high usability and antiwear performance may be formed efficiently. According to a film formation apparatus (1) of the present invention, a substrate holder (12) which comprises a basal body holding surface for folding a plurality of substrates (14) is disposed in a vacuum container (10) in a rotatable manner.

Abstract: A magnetic field generator arranged behind a target and for generating a magnetic field on a front surface of the target based on magnetic force lines can include a ring-shaped outer magnetic body having a pole axis in a parallel direction (X-direction) with respect to the target surface, a center magnetic body arranged on an inner side of the outer magnetic body and having a pole axis in a parallel direction (X-direction) with the direction of the pole axis of the outer magnetic body, a yoke plate for supporting the outer magnetic body and the center magnetic body from behind, and a magnetic permeable plate for changing a magnetic field distribution of the front surface of the target. The magnetic permeable plate is arranged so as to be supported by the yoke plate from behind.

Abstract: Provided is a thin film forming apparatus for reducing operation time and cost by forming a film only on a specific portion on substrates. A substrate holding mechanism provided in the apparatus includes: substrate holding members holding substrates in a manner that a part of a non-film forming portion of a substrate overlaps the other substrate and a film forming portion is exposed, a support member supporting the substrate holding members, and a rotation member which rotates the support member. The substrate holding members include: holding surfaces holding the substrates and disposed between a film forming source and the substrates, step portions formed between the holding surfaces in a manner that ends of the substrates respectively contact with the step portions, and opening portions formed on the holding surfaces of the portion corresponding to the film forming portion when the ends of the substrates contact with the step portions.

Abstract: A method of vapor depositing a vapor deposition substance onto substrates within a vacuum vessel includes holding the substrates with a dome shaped holder disposed within the vacuum vessel, rotating the dome shaped holder, vapor depositing a substance from a vapor deposition source disposed oppositely to the substrates, supplying ions from an ion source to the substrates, and supplying neutralizing electrons from a neutralizer to the substrates.