Abstract: A process for encapsulating a component made of organic semiconductors is provided which includes steps of: a) providing a housing including a substrate with electrical connections and a cover; b) mixing a soldering glass with at least one of a binder and a solvent; c) applying the soldering glass at least to the cover, in the form of an encircling bank; d) expelling the binder or solvent; e) sintering-on of the solder; f) covering the substrate with layers which represent the semiconductor component together with electrodes; g) placing the cover onto the substrate; and h) locally heating the soldering glass by means of a light source with a predetermined peak wavelength, wherein the housing parts and soldering glass are matched to one another such that their coefficients of thermal expansion differ from one another by less than 1.0×10?6K?1.

Abstract: A process for encapsulating a component made of organic semiconductors is provided which includes steps of: a) providing a housing including a substrate with electrical connections and a cover; b) mixing a soldering glass with at least one of a binder and a solvent; c) applying the soldering glass at least to the cover, in the form of an encircling bank; d) expelling the binder or solvent; e) sintering-on of the solder; f) covering the substrate with layers which represent the semiconductor component together with electrodes; g) placing the cover onto the substrate; and h) locally heating the soldering glass by means of a light source with a predetermined peak wavelength, wherein the housing parts and soldering glass are matched to one another such that their coefficients of thermal expansion differ from one another by less than 1.0×10−6K−1.

Abstract: A process for the production of an optoelectronic semiconductor component, and the component formed by the process. The component includes a chip which is provided with electrical terminals, and being fitted in a package which functionally consists of at least a base body and a top, both consisting of glass.

Abstract: To inhibit, or at least sharply attenuate, fluorescence of a quartz-glass velope (10) surrounding a light source (11), such as a halogen incandescent lamp, a high-pressure discharge lamp, or the like, when the quartz glass is subjected to ultraviolet (UV) radiation from the light source, and has been doped with a UV radiation absorbing material, typically a cerium, or cerium-titanium doping, the quartz-glass envelope is additionally doped with barium and boron. The barium/boron in the doping is, preferably, present in quantities of between about 0.008 and 1.25%, by weight, with reference to the undoped quartz glass. Barium metaborate can be used, optionally together with praseodymium to attenuate the fluorescence. Preferably, barium and boron form a combined doping substance with cerium, in form of a cerium aluminate and metaborate, added to the starting material for the quartz glass, and before the quartz glass is fused from quartz sand or pulverized quartz crystal.

Abstract: To inhibit, or at least sharply attenuate, fluorescence of a quartz-glass velope (10) surrounding a light source (11), such as a halogen incandescent lamp, a high-pressure discharge lamp, or the like, when the quartz glass is subjected to ultraviolet (UV) radiation from the light source, and has been doped with a UV radiation absorbing material, typically a cerium, or cerium-titanium doping, the quartz-glass envelope is additionally doped with praseodymium or a praseodymium compound, such as praseodymium oxide or praseodymium aluminate. The pure praseodymium in the doping is, preferably, present in quantities of between about 0.008 and 1.25%, by weight, with reference to the undoped quartz glass. Barium metaborate can also be used, preferably together with praseodymium to attenuate the fluorescence.