Abstract: A method and an arrangement are provided for the return of brake fluid from a pedal travel simulator into the auxiliary brake circuit of an electrohydraulic brake system, and to an electrohydraulic brake system and a tandem master brake cylinder. For this purpose, in an emergency, the return line of the pedal travel simulator, which is connected to the brake fluid reservoir during normal operation, is separated from the unpressurized brake fluid reservoir and instead connected to the delivery side of the electrohydraulic pressure supply system or at least to the pressure accumulator of the electrohydraulic system.

Abstract: The invention relates to a return of the brake fluid out of the pedal travel simulator into the auxiliary brake circuit. For this purpose, a pedal travel simulator is designed as a spring-loaded cylinder with a coupled and activated hydraulic booster piston and with a strengthened compression spring. The compression spring conveys the brake fluid contained in the pedal travel simulator back into the auxiliary brake circuit of the electrohydraulic brake system. The spring force of the compression spring is dimensioned such that, when the piston of the pedal travel simulator is in its inlet-side end position, the pedal travel simulator has prevailing in it a minimum pressure which is sufficient to make it possible to adhere in the auxiliary brake circuit to the boundary conditions for the auxiliary brake system which are prescribed according to StVZO, EU directive 71/3210 EWG and ECE regulation 13.

Abstract: The invention relates to a method for producing a microelectronic semiconductor component, especially made of silicon carbide. According to said method doped areas are produced in the semiconductor by ion implantation and radiation damage in the semiconductor is then eliminated by irradiation with electromagnetic rays. The semiconductor is exposed across substantially its entire surface to pulse-like optical radiation and heated at least in the doped area.

Abstract: A process for producing high-resistance SiC from low-resistance SiC starting material. The flat (shallow) donor levels of a prevailing nitrogen impurity are overcompensated by admixture of a trivalent doping element with the concentration of the doping element in the SiC being such that it changes the conductivity type from a n-conductivity to a p-conductivity. In addition, a transition element is added having donor levels approximately in the middle of the SiC energy gap, so that the excess acceptor levels are in turn compensated and a high specific resistance is achieved.

Abstract: SiC field-effect transistors with source, gate and drain contacts and in which the source contacts are located on the surface of the semiconductor wafer, the drain contacts on the underside of the wafer and the gate contacts in trench-like structures. The trench-like structures surround the source electrodes of the transistors in the shape of a ring and the gate contacts are connected to each other on the floors of the trenches.

Abstract: A method of providing an amorphous carbon cover layer on an electrophotographic recording material, including the steps of (a) providing a substrate which is an electrophotographic recording material, (b) maintaining the substrate in an atmosphere comprised of argon, hydrogen, and C.sub.2 F.sub.6, and (c) simultaneously with step (b), depositing amorphous fluorinated, hydrogenated carbon on the substrate by direct current magnetron cathode sputtering of glasslike carbon to provide an amorphous carbon cover layer which is transparent, hydrophobic, and has a Vickers hardness of greater than 2000.

Abstract: A thin film solar cell with an n-i-p structure has roughened substrate surface and to achieve an improved fill factor, the substrate surface of the solar cell is a multiply concave surface and has no sharp points.

Abstract: A method of producing an electrophotographic recording material, in which an aluminum substrate is coated with a blocking layer. The blocking layer is coated with a layer of amorphous silicon by direct current magnetron cathode sputtering. At least one sputter target containing silicon is used, and a power density of from about 2.0 W/cm.sup.2 to about 30 W/cm.sup.2 is used for the sputtering. The sputtering is performed in an atmosphere containing hydrogen and an inert gas, with a total pressure of inert gas and hydrogen being in a range from about 1.times.10.sup.-3 to about 10.times.10.sup.-3 mbar. This produces a layer of amorphous silicon having a hydrogen content of more than 40 atom %, an inert gas content in a range of 0.01 to 10 atom %, and in which the relative peak heights of the low and high temperature peaks during hydrogen effusion are approximately equal. The amorphous silicon layer is then coated with a cover layer.