Abstract: A method includes forming a stack of alternating oxide semiconductor channel layers and sacrificial layers over a substrate; removing first portions of the sacrificial layers to expose channel regions of the oxide semiconductor channel layers; forming a gate structure wrapping around each of the channel regions of the oxide semiconductor channel layers; removing second portions of the sacrificial layers to expose source/drain regions of the oxide semiconductor channel layers; and forming source/drain electrodes wrapping around and in contact with each of the source/drain regions of the oxide semiconductor channel layers, wherein the source/drain electrodes are made of a metal-containing material.

Abstract: An integrated circuit device includes a semiconductor layer, an oxide semiconductor layer, and a gate structure. The semiconductor layer is free of oxygen. The oxide semiconductor layer is over and spaced apart from the semiconductor layer. The gate structure wraps around a channel region of the semiconductor layer and a channel region of the oxide semiconductor layer.

Abstract: A photosensor provided herein includes a sensing structure and a microlens. The sensing structure includes an epitaxial layer, a deep trench and a scattering structure. The epitaxial layer has an illuminated surface and a non-illuminated surface. The deep trench isolation is located along an edge of the epitaxial layer. The scattering structure is embedded in the epitaxial layer and extends inwardly from the illuminated surface. The scattering structure includes a first circular ring pattern and a peripheral pattern. The deep trench isolation surrounds the scattering structure, the peripheral pattern is connected with the deep trench isolation and the first circular ring pattern is separated from the peripheral pattern and the deep trench isolation. The microlens is disposed on the epitaxial layer, wherein the illuminated surface of the epitaxial layer is relatively close to the microlens than the non-illuminated surface.

Abstract: A photosensor provided herein includes a sensing structure and a microlens. The sensing structure includes an epitaxial layer, a deep trench and a scattering structure. The epitaxial layer has an illuminated surface and a non-illuminated surface. The deep trench isolation is located along an edge of the epitaxial layer. The scattering structure is embedded in the epitaxial layer and extends inwardly from the illuminated surface. The scattering structure includes a first circular ring pattern and a peripheral pattern. The deep trench isolation surrounds the scattering structure, the peripheral pattern is connected with the deep trench isolation and the first circular ring pattern is separated from the peripheral pattern and the deep trench isolation. The microlens is disposed on the epitaxial layer, wherein the illuminated surface of the epitaxial layer is relatively close to the microlens than the non-illuminated surface.