Patents by Inventor Ekta Misra

Ekta Misra has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • STRUCTURES AND METHODS TO REDUCE MAXIMUM CURRENT DENSITY IN A SOLDER BALL
    Publication number: 20110147922
    Abstract: Structures and methods to reduce maximum current density in a solder ball are disclosed. A method includes forming a contact pad in a last wiring level and forming a plurality of wires of the contact pad extending from side edges of the contact pad to respective ones of a plurality of vias. Each one of the plurality of wires has substantially the same electrical resistance.
    Type: Application
    Filed: December 17, 2009
    Publication date: June 23, 2011
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Raschid J. BEZAMA, Timothy H. DAUBENSPECK, Gary LaFONTANT, Ian D. MELVILLE, Ekta MISRA, George J. SCOTT, Krystyna W. SEMKOW, Timothy D. SULLIVAN, Robin A. SUSKO, Thomas A. WASSICK, Xiaojin WEI, Steven L. WRIGHT
  • Cladded silver and silver alloy metallization for improved adhesion electromigration resistance
    Patent number: 7888263
    Abstract: In semiconductor integrated circuit and device fabrication interconnect metallization is accomplished by a clad Ag deposited on a SiO2 level on a Si surface. The clad Ag has a layer of an alloy of Ag and Al (5 atomic %) contacting the SiO2, a layer of substantially pure Ag and an outer layer of the Ag and Al alloy. The alloy improves adhesion to the SiO2, avoids agglomeration of the Ag, reduces or eliminates diffusion at the SiO2 surface, reduces electromigration and presents a passive exterior surface.
    Type: Grant
    Filed: September 25, 2008
    Date of Patent: February 15, 2011
    Assignee: Arizona Board of Regents
    Inventors: Terry L. Alford, Ekta Misra
  • CLADDED SILVER AND SILVER ALLOY METALLIZATION FOR IMPROVED ADHESION ELECTROMIGRATION RESISTANCE
    Publication number: 20090085212
    Abstract: In semiconductor integrated circuit and device fabrication interconnect metallization is accomplished by a clad Ag deposited on a SiO2 level on a Si surface. The clad Ag has a layer of an alloy of Ag and Al (5 atomic %) contacting the SiO2, a layer of substantially pure Ag and an outer layer of the Ag and Al alloy. The alloy improves adhesion to the SiO2, avoids agglomeration of the Ag, reduces or eliminates diffusion at the SiO2 surface, reduces electromigration and presents a passive exterior surface.
    Type: Application
    Filed: September 25, 2008
    Publication date: April 2, 2009
    Applicant: ARIZONA BOARD OF REGENTS
    Inventors: Terry L. Alford, Ekta Misra
  • Cladded silver and silver alloy metallization for improved adhesion and electromigration resistance
    Patent number: 7446037
    Abstract: In semiconductor integrated circuit and device fabrication interconnect metallization is accomplished by a clad Ag deposited on a SiO2 level on a Si surface. The clad Ag has a layer of an alloy of Ag and Al (5 atomic %) contacting the SiO2, a layer of substantially pure Ag and an outer layer of the Ag and Al alloy. The alloy improves adhesion to the SiO2, avoids agglomeration of the Ag, reduces or eliminates diffusion at the SiO2 surface, reduces electromigration and presents a passive exterior surface.
    Type: Grant
    Filed: August 18, 2005
    Date of Patent: November 4, 2008
    Inventors: Terry L. Alford, Ekta Misra
  • Cladded silver and silver alloy metallization for improved adhesion and electromigration resistance
    Publication number: 20060199360
    Abstract: In semiconductor integrated circuit and device fabrication interconnect metallization is accomplished by a clad Ag deposited on a SiO2 level on a Si surface. The clad Ag has a layer of an alloy of Ag and Al (5 atomic %) contacting the SiO2, a layer of substantially pure Ag and an outer layer of the Ag and Al alloy. The alloy improves adhesion to the SiO2, avoids agglomeration of the Ag, reduces or eliminates diffusion at the SiO2 surface, reduces electromigration and presents a passive exterior surface.
    Type: Application
    Filed: August 18, 2005
    Publication date: September 7, 2006
    Inventors: Terry Alford, Ekta Misra