Abstract: A method of forming a semiconductor device having a vertical metal line interconnect (via) fully aligned to a first direction of a first interconnect layer and a second direction of a second interconnect layer in a selective recess region by forming a plurality of metal lines in a first dielectric layer; and recessing in a recess region first portions of the plurality of metal lines such that top surfaces of the first portions of the plurality of metal lines are below a top surface of the first dielectric layer; wherein a non-recess region includes second portions of the plurality of metal lines that are outside the recess region.

Abstract: A method of forming a semiconductor device having a vertical metal line interconnect (via) fully aligned to a first direction of a first interconnect layer and a second direction of a second interconnect layer in a selective recess region by forming a plurality of metal lines in a first dielectric layer; and recessing in a recess region first portions of the plurality of metal lines such that top surfaces of the first portions of the plurality of metal lines are below a top surface of the first dielectric layer; wherein a non-recess region includes second portions of the plurality of metal lines that are outside the recess region.

Abstract: A method of forming a semiconductor device having a vertical metal line interconnect (via) fully aligned to a first direction of a first interconnect layer and a second direction of a second interconnect layer in a selective recess region by forming a plurality of metal lines in a first dielectric layer; and recessing in a recess region first portions of the plurality of metal lines such that top surfaces of the first portions of the plurality of metal lines are below a top surface of the first dielectric layer; wherein a non-recess region includes second portions of the plurality of metal lines that are outside the recess region.

Abstract: A low aspect ratio interconnect is provided and includes a metallization layer, a liner and a metallic interconnect. The metallization layer includes bottommost and uppermost surfaces. The uppermost surface has a maximum post-deposition height from the bottommost surface at first metallization layer portions. The metallization layer defines a trench at second metallization layer portions. The liner includes is disposed to line the trench and includes liner sidewalls that have terminal edges that extend to the maximum post-deposition height and lie coplanar with the uppermost surface at the first metallization layer portions. The metallic interconnect is disposed on the liner to fill a trench remainder and has an uppermost interconnect surface that extends to the maximum post-deposition height and lies coplanar with the uppermost surface at the first metallization layer portions.

Abstract: A method of forming a semiconductor device having a vertical metal line interconnect (via) fully aligned to a first direction of a first interconnect layer and a second direction of a second interconnect layer in a selective recess region by forming a plurality of metal lines in a first dielectric layer; and recessing in a recess region first portions of the plurality of metal lines such that top surfaces of the first portions of the plurality of metal lines are below a top surface of the first dielectric layer; wherein a non-recess region includes second portions of the plurality of metal lines that are outside the recess region.

Abstract: A structure having fully aligned via connecting metal lines on different Mx levels. The structure may include a first metal line and a second metal line in a first ILD, a cap covering the first ILD, the second metal line and a portion of the first metal line, a second ILD on the cap, and a via that electrically connects the first metal line to a third metal line, wherein the third metal line is above the first metal line and runs perpendicular to the first metal line, the via is fully aligned to the first metal line and the third metal line, and the via electrically connects the first metal line to the third metal line.

Abstract: A structure having fully aligned via connecting metal lines on different Mx levels. The structure may include a first metal line and a second metal line in a first ILD, a cap covering the first ILD, the second metal line and a portion of the first metal line, a second ILD on the cap, and a via that electrically connects the first metal line to a third metal line, wherein the third metal line is above the first metal line and runs perpendicular to the first metal line, the via is fully aligned to the first metal line and the third metal line, and the via electrically connects the first metal line to the third metal line.

Abstract: A low aspect ratio interconnect is provided and includes a metallization layer, a liner and a metallic interconnect. The metallization layer includes bottommost and uppermost surfaces. The uppermost surface has a maximum post-deposition height from the bottommost surface at first metallization layer portions. The metallization layer defines a trench at second metallization layer portions. The liner includes is disposed to line the trench and includes liner sidewalls that have terminal edges that extend to the maximum post-deposition height and lie coplanar with the uppermost surface at the first metallization layer portions. The metallic interconnect is disposed on the liner to fill a trench remainder and has an uppermost interconnect surface that extends to the maximum post-deposition height and lies coplanar with the uppermost surface at the first metallization layer portions.

Abstract: A method of forming a semiconductor device having a vertical metal line interconnect (via) fully aligned to a first direction of a first interconnect layer and a second direction of a second interconnect layer in a selective recess region by forming a plurality of metal lines in a first dielectric layer; and recessing in a recess region first portions of the plurality of metal lines such that top surfaces of the first portions of the plurality of metal lines are below a top surface of the first dielectric layer; wherein a non-recess region includes second portions of the plurality of metal lines that are outside the recess region.

Abstract: Methods of forming an interconnect structure include depositing a first conductive material on a substrate. Aspects include subtractively etching the conductive material to form a patterned first conductive layer, and depositing a dielectric layer on interconnect structure. Aspects also include depositing a second conductive material on the dielectric layer and removing the second conductive material through the top of the second metal liner.

Abstract: A method of forming an air gap for a semiconductor device and the device formed are disclosed. The method may include forming an air gap mask layer over a dielectric interconnect layer, the dielectric interconnect layer including a dielectric layer having a conductive interconnect therein and a cap layer over the dielectric layer; patterning the air gap mask layer using extreme ultraviolet (EUV) light and etching to form an air gap mask including an opening in the cap layer exposing a portion of the dielectric layer of the dielectric interconnect layer adjacent to the conductive interconnect; removing the air gap mask; etching an air gap space adjacent to the conductive interconnect within the dielectric layer of the dielectric interconnect layer using the opening in the cap layer; and forming an air gap in the dielectric interconnect layer by depositing an air gap capping layer to seal the air gap space.

Abstract: A low aspect ratio interconnect is provided and includes a metallization layer, a liner and a metallic interconnect. The metallization layer includes bottommost and uppermost surfaces. The uppermost surface has a maximum post-deposition height from the bottommost surface at first metallization layer portions. The metallization layer defines a trench at second metallization layer portions. The liner includes is disposed to line the trench and includes liner sidewalls that have terminal edges that extend to the maximum post-deposition height and lie coplanar with the uppermost surface at the first metallization layer portions. The metallic interconnect is disposed on the liner to fill a trench remainder and has an uppermost interconnect surface that extends to the maximum post-deposition height and lies coplanar with the uppermost surface at the first metallization layer portions.

Abstract: A structure having fully aligned via connecting metal lines on different Mx levels. The structure may include a first metal line and a second metal line in a first ILD, a cap covering the first ILD, the second metal line and a portion of the first metal line, a second ILD on the cap, and a via that electrically connects the first metal line to a third metal line, wherein the third metal line is above the first metal line and runs perpendicular to the first metal line, the via is fully aligned to the first metal line and the third metal line, and the via electrically connects the first metal line to the third metal line.

Abstract: A method of forming a semiconductor device having a vertical metal line interconnect (via) fully aligned to a first direction of a first interconnect layer and a second direction of a second interconnect layer in a selective recess region by forming a plurality of metal lines in a first dielectric layer; and recessing in a recess region first portions of the plurality of metal lines such that top surfaces of the first portions of the plurality of metal lines are below a top surface of the first dielectric layer; wherein a non-recess region includes second portions of the plurality of metal lines that are outside the recess region.

Abstract: A method of forming a semiconductor device having a vertical metal line interconnect (via) fully aligned to a first direction of a first interconnect layer and a second direction of a second interconnect layer in a selective recess region by forming a plurality of metal lines in a first dielectric layer; and recessing in a recess region first portions of the plurality of metal lines such that top surfaces of the first portions of the plurality of metal lines are below a top surface of the first dielectric layer; wherein a non-recess region includes second portions of the plurality of metal lines that are outside the recess region.

Abstract: A semiconductor device includes a first circuit structure and a second circuit structure. The first circuit structure includes a wiring line and a via upon and electrically contacting the wiring line. The via induces lateral etching voids between the via and the wiring line below the via upon the surface of the wiring line. The second circuit structure includes a similar wiring line, relative to the reference wiring line, without or fewer via thereupon. The first circuit structure is therefore relatively more prone to lateral etching void formation as compared to the second circuit structure. Resistances are measured across the first circuit structure and the second circuit structure and compared against a comparison threshold to determine whether the first circuit structure includes one or more lateral etching voids. If the first structure is deemed to not include lateral etching voids, the fabrication process of the device may be deemed reliable.

Abstract: A method for manufacturing a semiconductor device includes forming a dielectric layer on a substrate, forming a plurality of openings in the dielectric layer, conformally depositing a barrier layer on the dielectric layer and on sides and a bottom of each one of the plurality of openings, depositing a contact layer on the barrier layer in each one of the plurality of openings, removing a portion of each contact layer from each one of the plurality of openings, and removing a portion of the barrier layer from each one of the plurality of openings, wherein at least the removal of the portion of the barrier layer is performed using an etchant including: (a) a compound selected from group consisting of -azole, -triazole, and combinations thereof; (b) a compound containing one or more peroxy groups; (c) one or more alkaline metal hydroxides; and (d) water.

Abstract: A semiconductor substrate including one or more conductors is provided. A first layer and a second layer are deposited on the top surface of the conductors. A dielectric cap layer is formed over the semiconductor substrate and air gaps are etched into the dielectric layer. The result is a bilayer cap air gap structure with effective electrical performance.

Abstract: A method for forming interconnect structures includes forming a barrier material over a dielectric layer having a trench, the barrier layer being disposed on sidewalls and horizontal surfaces of the trench, depositing an interconnect layer over the barrier layer to form an interconnect structure, recessing the interconnect layer down to a surface of the barrier layer using a chemical mechanical planarization process, and planarizing the barrier layer and the interconnect layer using a wet etch process to form a coplanar surface to prevent dishing or divots in the interconnect structure.

Abstract: A method for forming interconnect structures includes forming a barrier material over a dielectric layer having a trench, the barrier layer being disposed on sidewalls and horizontal surfaces of the trench, depositing an interconnect layer over the barrier layer to form an interconnect structure, recessing the interconnect layer down to a surface of the barrier layer using a chemical mechanical planarization process, and planarizing the barrier layer and the interconnect layer using a wet etch process to form a coplanar surface to prevent dishing or divots in the interconnect structure.