Abstract: A semiconductor detector including a substrate formed of a semiconductor material and defining two opposite facing surfaces and at least one side wall, electrodes formed on two opposite facing surfaces of the substrate, the electrodes on one of the two opposite facing surfaces including an array of mutually spaced pixellated anodes defining interstices therebetween, an electrical insulator formed on the substrate at locations in the interstices between the mutually spaced pixellated anodes, or on the side wall, or both, and an electrical conductor formed onto at least part of the electrical insulator. There is also disclosed a method for overcoming performance degradation in a semiconductor detector due to non-uniformities in an electric field.

Abstract: A semiconductive detector includes a semiconductor substrate having electrodes formed at two opposite-facing surfaces thereof. A peripheral side-wall extends between the two opposite facing-surfaces, and an electrical insulator is formed on at least a portion of the side wall. An electrical conductor is provided over the insulator. A bias voltage may be applied to the conductor such that the electrical insulator and the conductor operate generally in a manner of a field effect transistor.