Abstract: A micromechanical mirror structure includes a mirror element designed to reflect an incident light radiation and a protective structure arranged over the mirror element to provide mechanical protection for the mirror element and to increase the reflectivity of the mirror element with respect to the incident light radiation. The protective structure has a first protective layer and a second protective layer which are stacked on the mirror element. The second protective layer is arranged on the first protective layer and the first protective layer is arranged on the mirror element. The layers include a respective dielectric material and having respective refractive indexes that jointly increase the reflectivity of the mirror element in a range of wavelengths of interest.

Abstract: A micromechanical mirror structure includes a mirror element designed to reflect an incident light radiation and a protective structure arranged over the mirror element to provide mechanical protection for the mirror element and to increase the reflectivity of the mirror element with respect to the incident light radiation. The protective structure has a first protective layer and a second protective layer which are stacked on the mirror element. The second protective layer is arranged on the first protective layer and the first protective layer is arranged on the mirror element. The layers include a respective dielectric material and having respective refractive indexes that jointly increase the reflectivity of the mirror element in a range of wavelengths of interest.

Abstract: The invention relates to an ultrasonic transducer comprising a plurality of micro-cells, arranged in an array having M rows and N columns, and driving electronic means apt to connect in parallel to each other said micro-cells so as to form at least two sub-groups of said micro-cells, the micro-cells of each sub-group being connected in parallel to each other, at least one column of said array comprising micro-cells belonging to at least two different adjacent sub-groups, so that a radiation emitted in a direction perpendicular to the array columns by said at least one column has a phase that is intermediate between the phases of said at least two different adjacent sub-groups.

Abstract: The invention concerns a manufacturing process, and the related micromachined capacitive ultra-acoustic transducer, that uses commercial silicon wafer 8 already covered on at least one or, more preferably, on both faces by an upper layer 9 and by a lower layer 9? of silicon nitride deposited with low pressure chemical vapour deposition technique, or deposition LPCVD deposition. One of the two layers 9 or 9? of silicon nitride, of optimal quality, covering the wafer 8 is used as emitting membrane of the transducer. As a consequence, the micro-cell array 6 forming the CMUT transducer is grown onto one of the two layers of silicon nitride, i.e. it is grown at the back of the transducer with a sequence of steps that is reversed with respect to the classical technology.

Abstract: The invention concerns a manufacturing process, and the related micromachined capacitive ultra-acoustic transducer, that uses commercial silicon wafer 8 already covered on at least one or, more preferably, on both faces by an upper layer 9 and by a lower layer 9? of silicon nitride deposited with low pressure chemical vapour deposition technique, or deposition LPCVD deposition. One of the two layers 9 or 9? of silicon nitride, of optimal quality, covering the wafer 8 is used as emitting membrane of the transducer. As a consequence, the micro-cell array 6 forming the CMUT transducer is grown onto one of the two layers of silicon nitride, i.e. it is grown at the back of the transducer with a sequence of steps that is reversed with respect to the classical technology.

Abstract: A surface micromachining process for manufacturing Electro-acoustic transducers, particularly ultrasonic transducers, the transducers comprising a silicon semiconductor substrate (1), on an upper surface of which one or more membranes (18) of resilient materials are supported by a structural layer (11) of insulating material, rigidly connected to the semiconductor substrate (1), the resilient material having a Young's modulus not lower than 50 GPa, the membranes (18) being metallised, the transducers including one or more lower electrodes (23, 25), rigidly connected to the semiconductor substrate. The process is characterised in that the structural layer (11) includes silicon monoxide. The invention further relates to an Electro-acoustic transducer, particularly an ultrasonic transducer, characterised in that the insulating material of the structural layer (11) is silicon monoxide.

Abstract: The invention relates to an ultrasonic transducer comprising a plurality of micro-cells, arranged in an array having M rows and N columns, and driving electronic means apt to connect in parallel to each other said micro-cells so as to form at least two sub-groups of said micro-cells, the micro-cells of each sub-group being connected in parallel to each other, at least one column of said array comprising micro-cells belonging to at least two different adjacent sub-groups, so that a radiation emitted in a direction perpendicular to the array columns by said at least one column has a phase that is intermediate between the phases of said at least two different adjacent sub-groups.

Abstract: This invention relates to a surface micromachining process for manufacturing Electro-acoustic transducers, particularly ultrasonic transducers, said transducers comprising a silicon semiconductor substrate (1), on an upper surface of which one or more membranes (18) of resilient materials are supported by a structural layer (11) of insulating materiel, rigidly connected to said semiconductor substrate (1), said resilient material having a Young's modulus not lower than 50 GPa, said membranes (18) being metallised, said transducers including one or more lower electrodes (23, 25), rigidly connected to said semiconductor substrate (1), the process being characterised in that said structural layer (11) includes silicon monoxide. The invention further relates to an Electro-acoustic transducer, particularly an ultrasonic transducer, characterised in that the insulating material of the structural layer (11) is silicon monoxide.