Abstract: A switching circuit includes first and second half bridges supplying an electrical load via filter networks. During alternate switching sequences a first transistor pair (high-side in one half bridge and low-side in the other half bridge) is switched to a non-conductive state, and a second transistor pair (high-side in the other half bridge and low-side in the one half bridge) is switched to a conductive state. A current flow line is provided by an inductance, a first switch and a second switch between outputs of the half bridges. In a medium-high power mode, the first and second switches are in the conductive state between switching the first pair of transistors to the non-conductive state and the second pair of transistors to the conductive state. In a low or quiescent power mode, switching the first and second switches to the conductive state is refrained due to application of a longer delay.

Abstract: A non-volatile memory device of flash type includes first memory cells for storing data, second memory cells for storing protection information of the first memory cells, and a circuit for updating the protection information that includes a circuit for writing a plurality of versions of the protection information in the second memory cells, and a circuit for identifying a current version of the protection information.

Abstract: A non-volatile memory device of flash type includes first memory cells for storing data, second memory cells for storing protection information of the first memory cells, and a circuit for updating the protection information that includes a circuit for writing a plurality of versions of the protection information in the second memory cells, and a circuit for identifying a current version of the protection information.