Abstract: The invention relates to a method for electrochemical production of a product in an electrochemical cell comprising an extraction compartment. The extraction compartment comprises a liquid comprising a dissolved polyelectrolyte. The method comprises producing cations at an anode, producing anions at a cathode and transporting the ions through ion-selective membranes into the extraction compartment where the product is formed. The invention further relates to an electrochemical cell for use in the method.

Abstract: The invention is in the field of CO2 capture. In particular the invention relates to a method for capturing CO2 from a CO2-containing feed gas stream, wherein the method comprises at least partially removing dissolved transition metal ions by electrodeposition. The invention further relates to a system for the method.

Abstract: A plurality of endpoints in a wet etching process of a substrate are determined. A plurality of benchmark end points during a wet etching process of a first substrate are determined, using first light information represented by a HSV color model for sample locations of the first substrate. Etch parameters are generated for a wet etching process for a second substrate. The generated etch parameters are used with second light information represented by at least one value of the Hue, Saturation, Value color model associated with a plurality of sample locations of the second substrate to reach respective end points during the wet etching process of a second substrate.

Abstract: A semiconductor etch process is provided in which an undercut is minimized during an etch process through tight control of etch profile, recognition of etch completion, and minimization of over etch time to increase productivity.

Abstract: A plurality of endpoints in a wet etching process of a substrate are determined. A plurality of benchmark end points during a wet etching process of a first substrate are determined, using first light information represented by a HSV color model for sample locations of the first substrate. Etch parameters are generated for a wet etching process for a second substrate. The generated etch parameters are used with second light information represented by at least one value of the Hue, Saturation, Value color model associated with a plurality of sample locations of the second substrate to reach respective end points during the wet etching process of a second substrate.

Abstract: A system and method for performing a wet etching process is disclosed. The system includes multiple processing stations accessible by a transfer device, including a measuring station to optically measure the thickness of a wafer before and after each etching steps in the process. The system also includes a controller to analyze the thickness measurements in view of a target wafer profile and generate an etch recipe, dynamically and in real time, for each etching step. In addition, the process controller can cause a single wafer wet etching station to etch the wafer according to the generated etching recipes. In addition, the system can, based on the pre and post-etch thickness measurements and target etch profile, generate and/or refine the etch recipes.

Abstract: A semiconductor etch process is provided in which an undercut is minimized during an etch process through tight control of etch profile, recognition of etch completion, and minimization of over etch time to increase productivity.

Abstract: A system and method for performing a wet etching process is disclosed. The system includes multiple processing stations accessible by a transfer device, including a measuring station to optically measure the thickness of a wafer before and after each etching steps in the process. The system also includes a controller to analyze the thickness measurements in view of a target wafer profile and generate an etch recipe, dynamically and in real time, for each etching step. In addition, the process controller can cause a single wafer wet etching station to etch the wafer according to the generated etching recipes. In addition, the system can, based on the pre and post-etch thickness measurements and target etch profile, generate and/or refine the etch recipes.

Abstract: A system and method for performing a wet etching process is disclosed. The system includes multiple processing stations accessible by a transfer device, including a measuring station to optically measure the thickness of a wafer before and after each etching steps in the process. The system also includes a controller to analyze the thickness measurements in view of a target wafer profile and generate an etch recipe, dynamically and in real time, for each etching step. In addition, the process controller can cause a single wafer wet etching station to etch the wafer according to the generated etching recipes. In addition, the system can, based on the pre and post-etch thickness measurements and target etch profile, generate and/or refine the etch recipes.

Abstract: A system and method for performing a wet etching process is disclosed. The system includes multiple processing stations accessible by a transfer device, including a measuring station to optically measure the thickness of a substrate, a controller to calculate an etch recipe for the substrate, in real time, and cause a single wafer wet etching station to etch the substrate according to the recipe. In addition, the system can measure the after etch thickness and calculate etch recipes, in real time, as a function of the final measurements of a previous substrate. The system can also include an in situ end point detection device for detecting the TSV reveal point while etching TSVs substrates. The system provides an automated solution to adjust etch recipe parameters in real time according to feedback concerning previously etched wafers and precisely control the TSV reveal height and etch duration using end point detection.

Abstract: The present apparatus and method are configured to remove challenging polymer films and structures from semiconductor wafers. This technique involves the use of a double soak and spray sequence with unique parameters and can be varied depending upon the application. The initial immersion step is used to initiate the swelling and dissolution of the polymer. The first spray step may include a high pressure needle to pierce through the top layer allowing more solvent to penetrate in the subsequent soak process. The second immersion can then penetrate further and faster allowing substantial penetration of the polymer by the solvent. The final high pressure spray proceeds to remove all of the polymer coating. The process ends with a final rinse and dry sequence.

Abstract: A system and method for performing a wet etching process is disclosed. The system includes multiple processing stations accessible by a transfer device, including a measuring station to optically measure the thickness of a wafer before and after each etching steps in the process. The system also includes a controller to analyze the thickness measurements in view of a target wafer profile and generate an etch recipe, dynamically and in real time, for each etching step. In addition, the process controller can cause a single wafer wet etching station to etch the wafer according to the generated etching recipes. In addition, the system can, based on the pre and post-etch thickness measurements and target etch profile, generate and/or refine the etch recipes.

Abstract: The present apparatus and method are configured to remove challenging polymer films and structures from semiconductor wafers. This technique involves the use of a double soak and spray sequence with unique parameters and can be varied depending upon the application. The initial immersion step is used to initiate the swelling and dissolution of the polymer. The first spray step may include a high pressure needle to pierce through the top layer allowing more solvent to penetrate in the subsequent soak process. The second immersion can then penetrate further and faster allowing substantial penetration of the polymer by the solvent. The final high pressure spray proceeds to remove all of the polymer coating. The process ends with a final rinse and dry sequence.

Abstract: A system and method for performing a wet etching process is disclosed. The system includes multiple processing stations accessible by a transfer device, including a measuring station to optically measure the thickness of a substrate, a controller to calculate an etch recipe for the substrate, in real time, and cause a single wafer wet etching station to etch the substrate according to the recipe. In addition, the system can measure the after etch thickness and calculate etch recipes, in real time, as a function of the final measurements of a previous substrate. The system can also include an in situ end point detection device for detecting the TSV reveal point while etching TSVs substrates. The system provides an automated solution to adjust etch recipe parameters in real time according to feedback concerning previously etched wafers and precisely control the TSV reveal height and etch duration using end point detection.