Patents by Inventor Elena Lawrence

Elena Lawrence has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250038238
    Abstract: The invention is directed to a redox flow battery that exhibits a tunable power output and/or tunable storage capacity, said redox flow battery comprising an anodic compartment and a cathodic compartment that respectively comprise an anolyte fluid and a catholyte fluid of which at least one comprises a dispersion of particles of a redox-active component, wherein said redox flow battery further comprises a tunable agitation device that is configured to controllably gradually agitate at least part of said dispersion. Further, the invention is directed to a method of operating the redox flow battery, for example by changing the agitation frequency of said tunable agitation device and/or by changing the displacement volume of the agitating device.
    Type: Application
    Filed: October 28, 2022
    Publication date: January 30, 2025
    Inventors: Ruud CUYPERS, Earl Lawrence Vincent GOETHEER, Anca ANASTASOPOL, Elena PEREZ GALLENT, Susan TURK, Arie Jacobus KALKMAN, Franciscus Petrus Felix VAN BERKEL, Riccardo ZAFFARONI
  • Patent number: 11069583
    Abstract: A plurality of endpoints in a wet etching process of a substrate are determined. A plurality of benchmark end points during a wet etching process of a first substrate are determined, using first light information represented by a HSV color model for sample locations of the first substrate. Etch parameters are generated for a wet etching process for a second substrate. The generated etch parameters are used with second light information represented by at least one value of the Hue, Saturation, Value color model associated with a plurality of sample locations of the second substrate to reach respective end points during the wet etching process of a second substrate.
    Type: Grant
    Filed: November 15, 2019
    Date of Patent: July 20, 2021
    Assignee: VEECO INSTRUMENTS INC.
    Inventors: John Taddei, David A. Goldberg, Elena Lawrence, Ian Cochran, Christopher Orlando, James Swallow, William Gilbert Breingan
  • Patent number: 11004755
    Abstract: A semiconductor etch process is provided in which an undercut is minimized during an etch process through tight control of etch profile, recognition of etch completion, and minimization of over etch time to increase productivity.
    Type: Grant
    Filed: June 20, 2019
    Date of Patent: May 11, 2021
    Assignee: VEECO INSTRUMENTS INC.
    Inventors: John Taddei, David A. Goldberg, Elena Lawrence, Ian Cochran, Christopher Orlando, James Swallow
  • Publication number: 20200091014
    Abstract: A plurality of endpoints in a wet etching process of a substrate are determined. A plurality of benchmark end points during a wet etching process of a first substrate are determined, using first light information represented by a HSV color model for sample locations of the first substrate. Etch parameters are generated for a wet etching process for a second substrate. The generated etch parameters are used with second light information represented by at least one value of the Hue, Saturation, Value color model associated with a plurality of sample locations of the second substrate to reach respective end points during the wet etching process of a second substrate.
    Type: Application
    Filed: November 15, 2019
    Publication date: March 19, 2020
    Inventors: John Taddei, David A. Goldberg, Elena Lawrence, Ian Cochran, Christopher Orlando, James Swallow, William Gilbert Breingan
  • Patent number: 10553502
    Abstract: A system and method for performing a wet etching process is disclosed. The system includes multiple processing stations accessible by a transfer device, including a measuring station to optically measure the thickness of a wafer before and after each etching steps in the process. The system also includes a controller to analyze the thickness measurements in view of a target wafer profile and generate an etch recipe, dynamically and in real time, for each etching step. In addition, the process controller can cause a single wafer wet etching station to etch the wafer according to the generated etching recipes. In addition, the system can, based on the pre and post-etch thickness measurements and target etch profile, generate and/or refine the etch recipes.
    Type: Grant
    Filed: June 8, 2018
    Date of Patent: February 4, 2020
    Assignee: VEECO PRECISION SURFACE PROCESSING LLC
    Inventors: Laura Mauer, John Taddei, John Clark, Elena Lawrence, Eric Kurt Zwirnmann, David A. Goldberg, Jonathan Yutkowitz
  • Publication number: 20190393108
    Abstract: A semiconductor etch process is provided in which an undercut is minimized during an etch process through tight control of etch profile, recognition of etch completion, and minimization of over etch time to increase productivity.
    Type: Application
    Filed: June 20, 2019
    Publication date: December 26, 2019
    Inventors: John Taddei, David A. Goldberg, Elena Lawrence, Ian Cochran, Christopher Orlando, James Swallow
  • Publication number: 20180294196
    Abstract: A system and method for performing a wet etching process is disclosed. The system includes multiple processing stations accessible by a transfer device, including a measuring station to optically measure the thickness of a wafer before and after each etching steps in the process. The system also includes a controller to analyze the thickness measurements in view of a target wafer profile and generate an etch recipe, dynamically and in real time, for each etching step. In addition, the process controller can cause a single wafer wet etching station to etch the wafer according to the generated etching recipes. In addition, the system can, based on the pre and post-etch thickness measurements and target etch profile, generate and/or refine the etch recipes.
    Type: Application
    Filed: June 8, 2018
    Publication date: October 11, 2018
    Inventors: Laura Mauer, John Taddei, John Clark, Elena Lawrence, Eric Kurt Zwirnmann, David A. Goldberg, Jonathan Yutkowitz
  • Patent number: 10026660
    Abstract: A system and method for performing a wet etching process is disclosed. The system includes multiple processing stations accessible by a transfer device, including a measuring station to optically measure the thickness of a wafer before and after each etching steps in the process. The system also includes a controller to analyze the thickness measurements in view of a target wafer profile and generate an etch recipe, dynamically and in real time, for each etching step. In addition, the process controller can cause a single wafer wet etching station to etch the wafer according to the generated etching recipes. In addition, the system can, based on the pre and post-etch thickness measurements and target etch profile, generate and/or refine the etch recipes.
    Type: Grant
    Filed: October 30, 2015
    Date of Patent: July 17, 2018
    Assignee: VEECO PRECISION SURFACE PROCESSING LLC
    Inventors: Laura Mauer, John Taddei, John Clark, Elena Lawrence, Eric Kurt Zwirnmann, David A. Goldberg, Jonathan Yutkowitz
  • Patent number: 9698062
    Abstract: A system and method for performing a wet etching process is disclosed. The system includes multiple processing stations accessible by a transfer device, including a measuring station to optically measure the thickness of a substrate, a controller to calculate an etch recipe for the substrate, in real time, and cause a single wafer wet etching station to etch the substrate according to the recipe. In addition, the system can measure the after etch thickness and calculate etch recipes, in real time, as a function of the final measurements of a previous substrate. The system can also include an in situ end point detection device for detecting the TSV reveal point while etching TSVs substrates. The system provides an automated solution to adjust etch recipe parameters in real time according to feedback concerning previously etched wafers and precisely control the TSV reveal height and etch duration using end point detection.
    Type: Grant
    Filed: February 28, 2013
    Date of Patent: July 4, 2017
    Assignee: VEECO PRECISION SURFACE PROCESSING LLC
    Inventors: Laura Mauer, Elena Lawrence, John Taddei, Ramey Youssef
  • Patent number: 9541837
    Abstract: The present apparatus and method are configured to remove challenging polymer films and structures from semiconductor wafers. This technique involves the use of a double soak and spray sequence with unique parameters and can be varied depending upon the application. The initial immersion step is used to initiate the swelling and dissolution of the polymer. The first spray step may include a high pressure needle to pierce through the top layer allowing more solvent to penetrate in the subsequent soak process. The second immersion can then penetrate further and faster allowing substantial penetration of the polymer by the solvent. The final high pressure spray proceeds to remove all of the polymer coating. The process ends with a final rinse and dry sequence.
    Type: Grant
    Filed: June 20, 2013
    Date of Patent: January 10, 2017
    Assignee: VEECO PRECISION SURFACE PROCESSING LLC
    Inventors: John Taddei, Laura Mauer, Ramey Youssef, John Clark, Elena Lawrence
  • Publication number: 20160126148
    Abstract: A system and method for performing a wet etching process is disclosed. The system includes multiple processing stations accessible by a transfer device, including a measuring station to optically measure the thickness of a wafer before and after each etching steps in the process. The system also includes a controller to analyze the thickness measurements in view of a target wafer profile and generate an etch recipe, dynamically and in real time, for each etching step. In addition, the process controller can cause a single wafer wet etching station to etch the wafer according to the generated etching recipes. In addition, the system can, based on the pre and post-etch thickness measurements and target etch profile, generate and/or refine the etch recipes.
    Type: Application
    Filed: October 30, 2015
    Publication date: May 5, 2016
    Inventors: Laura Mauer, John Taddei, John Clark, Elena Lawrence, Eric Kurt Zwirnmann, David A. Goldberg, Jonathan Yutkowitz
  • Publication number: 20140377951
    Abstract: The present apparatus and method are configured to remove challenging polymer films and structures from semiconductor wafers. This technique involves the use of a double soak and spray sequence with unique parameters and can be varied depending upon the application. The initial immersion step is used to initiate the swelling and dissolution of the polymer. The first spray step may include a high pressure needle to pierce through the top layer allowing more solvent to penetrate in the subsequent soak process. The second immersion can then penetrate further and faster allowing substantial penetration of the polymer by the solvent. The final high pressure spray proceeds to remove all of the polymer coating. The process ends with a final rinse and dry sequence.
    Type: Application
    Filed: June 20, 2013
    Publication date: December 25, 2014
    Inventors: John Taddei, Laura Mauer, Ramey Youssef, John Clark, Elena Lawrence
  • Publication number: 20140242731
    Abstract: A system and method for performing a wet etching process is disclosed. The system includes multiple processing stations accessible by a transfer device, including a measuring station to optically measure the thickness of a substrate, a controller to calculate an etch recipe for the substrate, in real time, and cause a single wafer wet etching station to etch the substrate according to the recipe. In addition, the system can measure the after etch thickness and calculate etch recipes, in real time, as a function of the final measurements of a previous substrate. The system can also include an in situ end point detection device for detecting the TSV reveal point while etching TSVs substrates. The system provides an automated solution to adjust etch recipe parameters in real time according to feedback concerning previously etched wafers and precisely control the TSV reveal height and etch duration using end point detection.
    Type: Application
    Filed: February 28, 2013
    Publication date: August 28, 2014
    Applicant: Solid State Equipment LLC
    Inventors: Laura Mauer, Elena Lawrence, John Taddei, Ramey Youssef