Abstract: The silicon-based photomultiplier device comprises a substrate (1), a first layer (2) of a first conductivity type, a second layer (3) of a second conductivity type formed on the first layer, wherein the first layer (2) and the second layer (3) form a p-n junction, wherein the first layer (2) and the second layer (3) are disposed on or above the substrate (1). A material layer (15) between the substrate (1) and the first layer (2) fulfills the function of a light absorber, thereby efficiently suppressing crosstalk between adjacent cells of the device. Material layer (15) may further serve as an electrode for readout of electrical signals from the device.

Abstract: A triphenylene derivative useful for the production of organic light emitting diodes.

Abstract: The silicon-based photomultiplier device comprises a substrate (1), a first layer (2) of a first conductivity type, a second layer (3) of a second conductivity type formed on the first layer, wherein the first layer (2) and the second layer (3) form a p-n junction, wherein the first layer (2) and the second layer (3) are disposed on or above the substrate (1). A material layer (15) between the substrate (1) and the first layer (2) fulfils the function of a light absorber, thereby efficiently suppressing crosstalk between adjacent cells of the device. Material layer (15) may further serve as an electrode for readout of electrical signals from the device.

Abstract: Organometallic complexes which bear at least one ligand which has a unit having a triplet energy of at least 22 000 cm?1, a process for preparing the organometallic complexes, a mixture comprising at least one inventive organometallic complex, the use of the organometallic complexes or of the mixture in organic light-emitting diodes, the organometallic complexes preferably being used as emitter materials, and specific nitrogen- or phosphorus-substituted triphenylene derivatives and a process for their preparation.

Abstract: Organometallic complexes which bear at least one ligand which has a unit having a triplet energy of at least 22 000 cm?1, a process for preparing the organometallic complexes, a mixture comprising at least one of these organometallic complexes, the use of the organometallic complexes or of the mixture in organic light-emitting diodes, the organometallic complexes preferably being used as emitter materials, and specific nitrogen- or phosphorus-substituted triphenylene derivatives and a process for their preparation, the organometallic complex including a monoanionic bidentate ligand of formula (IIa)

Abstract: An iridium complex Ir(III)L 1L2L3 for emitting light with a central iridium ion Ir(III), with a ligand L3 as dionate from the group comprising pentane-2,4-dionate (acac), 2,2,6,6-tetramethyl-3,5-heptandionate (thd), 7,7-dimethyl-1,1,1,2,2,3,3-heptyfluoro-4,6-octandionate (fod), 4,4,4-trifluorol-(2-thienyl)butane-1,3-dionate (ttfa), 1,3-diphenylpropane-1,3-dionate (dbm), 4,4,4-trifluoro-1-(2-naphthyl)butane-1,3-dionate (tfnb) or 4,4,4-trifluoro-1-(1-naphthyl)butane-1,3-dionate and with two rigid aromatic ligands L1 and L2 with one nitrogen and one carbon atom, sharing in the ligand bond, preferably dibenzo[f,h]chinoline, benzo[h]chinoline or 5,6-dihydro-benzo[h]chinoline, characterized in that the iridium complex Ir(III)L1L2L3 is a first isomer (71), in which the nitrogen atom of the ligand L1 sharing in the ligand bonding and the nitrogen atom of the ligand L2 sharing in the ligand bonding are juxtaposed relative to the central iridium ion.

Abstract: Organometallic complexes which bear at least one ligand which has a unit having a triplet energy of at least 22 000 cm?1, a process for preparing the organometallic complexes, a mixture comprising at least one inventive organometallic complex, the use of the organometallic complexes or of the mixture in organic light-emitting diodes, the organometallic complexes preferably being used as emitter materials, and specific nitrogen- or phosphorus-substituted triphenylene derivatives and a process for their preparation.

Abstract: The present invention is directed to the field of organic light emitting diode (OLED) electroluminescent devices comprising a light-emitting layer containing an organic metal coordination compound with tailored ligands of the general structure (1) where (2) is a N-containing heterocycle comprising one or more cycle and where (3) is a unit with a triplet energy of at least 22,220 cm?1.

Abstract: An iridium complex Ir(III)L 1L2L3 for emitting light with a central iridium ion Ir(III), with a ligand L3 as dionate from the group comprising pentane-2,4-dionate (acac), 2,2,6,6-tetramethyl-3,5-heptandionate (thd), 7,7-dimethyl-1,1,1,2,2,3,3-heptyfluoro-4,6-octandionate (fod), 4,4,4-trifluorol-(2-thienyl)butane-1,3-dionate (ttfa), 1,3-diphenylpropane-1,3-dionate (dbm), 4,4,4-trifluoro-1-(2-naphthyl)butane-1,3-dionate (tfnb) or 4,4,4-trifluoro-1-(1-naphthyl)butane-1,3-dionate and with two rigid aromatic ligands L1 and L2 with one nitrogen and one carbon atom, sharing in the ligand bond, preferably dibenzo[f,h]chinoline, benzo[h]chinoline or 5,6-dihydro-benzo[h]chinoline, characterized in that the iridium complex Ir(III)L1L2L3 is a first isomer (71), in which the nitrogen atom of the ligand L1 sharing in the ligand bonding and the nitrogen atom of the ligand L2 sharing in the ligand bonding are juxtaposed relative to the central iridium ion.