Patents by Inventor Elfriede Simon

Elfriede Simon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7553458
    Abstract: An alcohol sensor having gas-sensitive layers made of polymers or inorganic oxides wherein a signal is read out by means of work function change which is produced in the form of a field-effect transistor.
    Type: Grant
    Filed: March 4, 2002
    Date of Patent: June 30, 2009
    Assignee: Micronas GmbH
    Inventors: Maximillian Fleischer, Hans Meixner, Tim Schwebel, Elfriede Simon
  • Publication number: 20090029403
    Abstract: A sensor for detecting a gas mixture which substantially comprises air and contains one or a plurality of gases that exhibit a disadvantageous effect on living organisms, comprising: a sensor chip composed of silicon for reading out at least one signal which is generated at a sensitive substance given the presence of one or a plurality of target gases in the measurement gas, a sensitive substance applied on the sensor chip, comprising living cells, which respond to target gas, a signal processing unit for evaluating the signals of the Si chip.
    Type: Application
    Filed: April 4, 2008
    Publication date: January 29, 2009
    Inventors: Maximilian Fleischer, Mirko Lehmann, Elfriede Simon
  • Patent number: 7459732
    Abstract: A gas-sensitive field-effect transistor may be formed from a substrate with a gas-sensitive layer and a transistor processed separately and then assembled. The substrate may be patterned to form spacers by which the height of an air gap between the transistor and the sensitive layer may be adjustable to a relatively precise degree. Formation of the spacers can be achieved by patterning the substrate using material-removal techniques. The height of the spacers may be adjusted in the layer thickness of the gas-sensitive layer and for the transistor fabricated using a CMOS process. Suitable techniques for producing recesses between the spacers include, for example, polishing, cutting, sandblasting, lithographic dry etching, or wet-chemical etching. Suitable materials for the substrate may include, for example, glass, ceramic, aluminum oxide, silicon, or a dimensionally stable polymer.
    Type: Grant
    Filed: March 31, 2006
    Date of Patent: December 2, 2008
    Assignee: Micronas GmbH
    Inventors: Maximilian Fleischer, Uwe Lampe, Hans Meixner, Roland Pohle, Ralf Schneider, Elfriede Simon
  • Publication number: 20080038749
    Abstract: A biosensor for detecting an antigen using an antigen/antibody coupling includes: a silicon substrate, at least one interdigital electrode pair structure that is located on the silicon substrate, the electrode pair being interspaced at a maximum distance of 1.0 ?m; a counter-electrode on the silicon substrate; a reference electrode; a first layer of protein, covering at least the interdigital electrode structure; a selective second protein layer applied to the first layer and containing a capture antibody selected specifically with respect to the antigen of interest and to which the antigen can be coupled. A sensor signal can be read on the interdigital electrode structure, if the antigen is coupled to the capture antibody by way of a sample to be analysed that comes into contact with the biosensor and a redox reactive molecule is enzymatically released on the sensor surface by an enzyme-marked detection antibody likewise coupled to the antigen.
    Type: Application
    Filed: January 27, 2005
    Publication date: February 14, 2008
    Inventors: Maximilian Fleischer, Corinna Haindl, Hans Meixner, Elfriede Simon
  • Publication number: 20080016949
    Abstract: A gas sensor based on a field effect transistor (“FET”) evaluates both a change in work function of a gas-sensitive layer of the FET and a change in the capacitance of the layer. Thus, two physically independent signals are read from the gas-sensitive layer, each signal representing a sensitivity to a different gas. This reduces the effect of cross-sensitivities; that is, of one gas on the target gas. The underlying physical mechanisms, the first causing a change in the work function in a reaction with gases and the second causing a change in the capacitance of the sensitive layer, are widely different. Because of this, the two parameters demonstrate different gas sensitivities. If the reactions to both gases are known, the effect of the interfering gas on the sensor signal can be compensated for, and with this the concentration of the target gas can be determined.
    Type: Application
    Filed: April 22, 2005
    Publication date: January 24, 2008
    Inventors: Maximillian Fleischer, Uwe Lampe, Hans Meixner, Roland Pohle, Elfriede Simon
  • Publication number: 20070235773
    Abstract: A gas-sensitive field-effect transistor (GasFET) for the detection or measurement of an amount of hydrogen sulfide present in ambient air includes a raised gate electrode and a transistor structure. The raised gate electrode may be formed from or coated with a gas-sensitive material such as tin oxide, or silver, silver oxide or mixtures thereof. An insulator layer may be disposed on top of the transistor structure. An air gap is formed between the gas-sensitive layer of the raised gate electrode and the insulator layer on top of the transistor structure.
    Type: Application
    Filed: March 31, 2006
    Publication date: October 11, 2007
    Inventors: Ignaz Eisele, Maximilian Fleischer, Gunter Freitag, Thorsten Knittel, Uwe Lampe, Hans Meixner, Roland Pohle, Elfriede Simon
  • Publication number: 20070220954
    Abstract: The invention relates to an FET-based gas sensor comprising a gas channel for diffusing a measuring gas to a gas-sensitive layer which is actively connected to a FET for signal readout. According to the invention, an electrochemical element is at least partially inserted into the gas channel for the electrochemical conversion of interfering gases. The arrangement is permeable to the target gas.
    Type: Application
    Filed: April 21, 2005
    Publication date: September 27, 2007
    Applicant: MICRONAS GMBH
    Inventors: Maximilian Fleischer, Hans Meixner, Elfriede Simon, Uwe Lampe, Roland Pohle
  • Publication number: 20060278528
    Abstract: Method of effecting a readout of a gas-sensitive field-effect transistor having an air gap between a gate electrode with a gas-sensitive layer and the readout transistor, in which a potential occurring on the gas-sensitive layer in the presence of a target gas is passed through a noncontacting floating gate electrode to the transistor, wherein the potential of a reference electrode, which together with the floating gate electrode generates a capacitance Cw, is tracked to the potential of the floating gate electrode in order to eliminate the capacitance Cw during the measurement.
    Type: Application
    Filed: March 30, 2006
    Publication date: December 14, 2006
    Inventors: Maximilian Fleischer, Hans Meixner, Uwe Lampe, Roland Pohle, Ralf Schneider, Elfriede Simon
  • Publication number: 20060260737
    Abstract: A gas-sensitive field-effect transistor may be formed from a substrate with a gas-sensitive layer and a transistor processed separately and then assembled. The substrate may be patterned to form spacers by which the height of an air gap between the transistor and the sensitive layer may be adjustable to a relatively precise degree. Formation of the spacers can be achieved by patterning the substrate using material-removal techniques. The height of the spacers may be adjusted in the layer thickness of the gas-sensitive layer and for the transistor fabricated using a CMOS process. Suitable techniques for producing recesses between the spacers include, for example, polishing, cutting, sandblasting, lithographic dry etching, or wet-chemical etching. Suitable materials for the substrate may include, for example, glass, ceramic, aluminum oxide, silicon, or a dimensionally stable polymer.
    Type: Application
    Filed: March 31, 2006
    Publication date: November 23, 2006
    Inventors: Maximilian Fleischer, Uwe Lampe, Hans Meixner, Roland Pohle, Ralf Schneider, Elfriede Simon
  • Publication number: 20050176067
    Abstract: A biosensor is for detecting an allergen-specific immunoglobulin E (IgE) via antigen/antibody coupling. The biosensor includes a silicon substrate and at least one interdigital electrode pair structure applied to the silicon substrate with a gap between the electrode pairs of a maximum of 1.0 ?m. A counter electrode is further applied to the silicon substrate. The biosensor also includes a reference electrode. Additionally, coatings are included on the biosensor. A first coat is made from protein coating at least the interdigital electrode structure; a selective second coat is made from protein applied over the first coat, the second coat containing a selected captor antibody; and a third coat is applied over the first coat, which contains the allergen which can couple to the captor antibody.
    Type: Application
    Filed: February 4, 2005
    Publication date: August 11, 2005
    Inventors: Maximilian Fleischer, Corinna Haindl, Hans Meixner, Elfriede Simon
  • Patent number: 6915678
    Abstract: An ozone sensor has an ozone-sensitive layer containing an ozone-sensitive material which is encapsulated in a polymer or in a polymer mixture or is coated by at least one polymer or polymer mixture. Advantages result from a longer service life of the ozone-sensitive materials which, because of their high hygroscopic properties, would not be stable without encapsulation or coating. Furthermore, a polymer matrix can be selectively used as a filter or in order to eliminate interfering influences.
    Type: Grant
    Filed: April 25, 2003
    Date of Patent: July 12, 2005
    Assignee: Siemens Aktiengesellschaft
    Inventors: Maximilian Fleischer, Hans Meixner, Bernhard Ostrick, Roland Pohle, Elfriede Simon, Martin Zimmer
  • Publication number: 20040133116
    Abstract: A volumetric flow of an analyte, including exhaled air, is fed to a gas sensor unit by used of gas flow device, which can include various sensors for the determination of nitrogen oxides. An oxidation catalyst is used when using an NO2 sensor, which converts nitrogen monoxide to nitrogen dioxide and the gas sensor unit measures the content of nitrogen dioxide. The nitrogen monoxide content is calculated from the nitrogen dioxide content. In order to eliminate cross-sensitivity moisture and ethanol are also measured. The device can be applied to the determination of nitrogen monoxide content of exhaled air.
    Type: Application
    Filed: October 30, 2003
    Publication date: July 8, 2004
    Inventors: Klaus Abraham-Fuchs, Maximilian Fleischer, Hans Meixner, Eva Rumpel, Elfriede Simon
  • Publication number: 20040025568
    Abstract: The invention relates to an ozone sensor having an ozone-sensitive layer containing an ozone-sensitive material which is encapsulated in a polymer or in a polymer mixture or is coated by at least one polymer or polymer mixture. Advantages result from a longer service life of the ozone-sensitive materials which, because of their high hygroscopic properties, would not be stable without encapsulation or coating. Furthermore, a polymer matrix can be selectively used as a filter or in order to eliminate interfering influences.
    Type: Application
    Filed: April 25, 2003
    Publication date: February 12, 2004
    Inventors: Maximilian Fleischer, Hans Meixner, Bernhard Ostrick, Roland Pohle, Elfriede Simon, Martin Zimmer
  • Publication number: 20020131898
    Abstract: An alcohol sensor having gas-sensitive layers made of polymers or inorganic oxides wherein a signal is read out by means of work function change which is produced in the form of a field-effect transistor.
    Type: Application
    Filed: March 4, 2002
    Publication date: September 19, 2002
    Inventors: Maximillian Fleischer, Hans Meixner, Tim Schwebel, Elfriede Simon