Abstract: The present disclosure relates to a system for a semiconductor processing. The system includes a semiconductor processing chamber having a plurality of processing stations, a plurality of manifold trunks, a plurality of valves, and a plurality of fluid manifolds. Each manifold trunk includes an outlet, a common flowpath, a plurality of trunk inlets, a plurality of orifices, and a plurality of valve interfaces.

Abstract: Various embodiments herein relate to apparatuses, systems, and methods for selective control of multi-station processing chamber components. In some embodiments, a method comprises: determining for a station of a plurality of stations, a number of deposition cycles to be performed; causing a first number of deposition cycles to be performed for each of the plurality of stations by causing a first plurality of control components associated with a first station and a second plurality of control components associated with a second station to be set to a first position; and responsive to determining that the first number of deposition cycles has been completed: causing at least one component of the first plurality of control components to be changed to a second position; and causing additional deposition cycles to be performed for the second station by causing the second plurality of control components to remain in the first position.

Abstract: A showerhead assembly includes a showerhead with an upper portion including a gas channel extending in a first direction and having a first width in a second direction. A lower portion is connected to the upper portion and includes a faceplate including a plurality of gas through holes extending vertically through the faceplate in the first direction and a baffle plate arranged on a plurality of posts above the faceplate and below an outlet of the gas channel. A gas plenum is defined between the upper portion and the lower portion, extends in the second direction, and is in fluid communication with the gas channel. The showerhead assembly includes a back side gas system to supply gas to a bellows volume defined by a bellows arranged around an upper portion of the showerhead. First and second annular gas flows are supplied across an outer surface of the showerhead.

Abstract: Methods of filling a gap with a dielectric material including using an inhibition plasma during deposition. The inhibition plasma increases a nucleation barrier of the deposited film. The inhibition plasma selectively interacts near the top of the feature, inhibiting deposition at the top of the feature compared to the bottom of the feature, enhancing bottom-up fill. A process chamber may have multiple pressure switches to enable a process after deposition at a higher pressure than the pressure during deposition.

Abstract: The present disclosure relates to a system for a semiconductor processing. The system includes a semiconductor processing chamber having a plurality of processing stations, a plurality of manifold trunks, a plurality of valves, and a plurality of fluid manifolds. Each manifold trunk includes an outlet, a common flowpath, a plurality of trunk inlets, a plurality of orifices, and a plurality of valve interfaces.

Abstract: Various embodiments herein relate to methods and apparatus for depositing silicon oxide using thermal ALD or thermal CVD. In one aspect of the disclosed embodiments, a method for depositing silicon oxide is provided, the method including: (a) receiving the substrate in a reaction chamber; (b) introducing a first flow of a first reactant into the reaction chamber and exposing the substrate to the first reactant, where the first reactant includes a silicon-containing reactant; (c) introducing a second flow of a second reactant into the reaction chamber to cause a reaction between the first reactant and the second reactant, (i) where the second reactant includes hydrogen (H2) and an oxygen-containing reactant, (ii) where the reaction deposits silicon oxide on the substrate, and (iii) where the reaction is initiated when a pressure in the reaction chamber is greater than 10 Torr and equal to or less than about 40 Torr.

Abstract: Methods and apparatuses for depositing material into high aspect ratio features are described herein. Methods involve depositing an oxide material using a hydrogen-containing oxidizing chemistry. Methods may also involve thermally treating deposited oxide material in the presence of hydrogen to remove seams within the deposited oxide material.

Abstract: A gas delivery system for a processing chamber includes a first channel for delivering a first chemistry and a second channel for delivering a second chemistry. The first channel includes a first outlet valve and the second channel includes a second outlet valve. A trickle gas source is connected to both the first and the second channels. A first junction is coupled to the first outlet valve and a second junction is connected to the second outlet valve. A common conduit connects between the first junction and the second junction. The first junction includes an input to provide a push gas from a push gas source and the second junction includes an output to a processing chamber. During operation, one of the first channel or the second channel is active at one time. A trickle gas from a trickle gas source is flowed into an active one and a non-active one of the first or second channels.

Abstract: A gas delivery system for a processing chamber includes a first channel for delivering a first chemistry and a second channel for delivering a second chemistry. The first channel includes a first outlet valve and the second channel includes a second outlet valve. A trickle gas source is connected to both the first and the second channels. A first junction is coupled to the first outlet valve and a second junction is connected to the second outlet valve. A common conduit connects between the first junction and the second junction. The first junction includes an input to provide a push gas from a push gas source and the second junction includes an output to a processing chamber. During operation, one of the first channel or the second channel is active at one time. A trickle gas from a trickle gas source is flowed into an active one and a non-active one of the first or second channels.

Abstract: A gas delivery system for a processing chamber includes a first channel for delivering a first chemistry and a second channel for delivering a second chemistry. The first channel includes a first outlet valve and the second channel includes a second outlet valve. A trickle gas source is connected to both the first and the second channels. A first junction is coupled to the first outlet valve and a second junction is connected to the second outlet valve. A common conduit connects between the first junction and the second junction. The first junction includes an input to provide a push gas from a push gas source and the second junction includes an output to a processing chamber. During operation, one of the first channel or the second channel is active at one time. A trickle gas from a trickle gas source is flowed into an active one and a non-active one of the first or second channels.

Abstract: A carrier ring for use in a chamber implemented for depositing films and chambers that use the carrier ring are provided. The carrier ring has an annular disk shape with an outer edge side and a wafer edge side. The carrier ring has a top carrier ring surface that extends between the outer edge side to the wafer edge side. The wafer edge side includes a lower carrier ring surface that is lower than the top carrier ring surface. The wafer edge side also includes a plurality of contact support structures. Each contact support structure is located at an edge of the lower carrier ring surface and has a height that is between the lower carrier ring surface and the top carrier ring surface, and the contact support structure has tapered edges and corners. A step is defined between the top carrier ring surface and the lower carrier ring surface, such that a top facing edge is disposed at a top of the step and a lower inner edge is disposed at the bottom of the step.

Abstract: A carrier ring for use in a chamber implemented for depositing films and chambers that use the carrier ring are provided. The carrier ring has an annular disk shape with an outer edge side and a wafer edge side. The carrier ring has a top carrier ring surface that extends between the outer edge side to the wafer edge side. The wafer edge side includes a lower carrier ring surface that is lower than the top carrier ring surface. The wafer edge side also includes a plurality of contact support structures. Each contact support structure is located at an edge of the lower carrier ring surface and has a height that is between the lower carrier ring surface and the top carrier ring surface, and the contact support structure has tapered edges and corners. A step is defined between the top carrier ring surface and the lower carrier ring surface, such that a top facing edge is disposed at a top of the step and a lower inner edge is disposed at the bottom of the step.