Abstract: A rectifier device, has a Hall layer comprising a layer of a Hall material, and a spin-orbit layer adjacent the Hall layer. The spin-orbit layer has a spin-orbit material having a first surface and a second surface, a ferromagnet adjacent the spin-orbit material, and oxide on the outer surfaces of the spin-orbit layer. A rectifying system has an array of the above rectifying devices having a number, K, of parallel branches, each branch having N devices, branch electrical connections between corresponding devices in each of the parallel branches, and device electrical connection between devices in each parallel branch.

Abstract: A hybrid solar system including a hybrid solar collector using non-imaging optics and photovoltaic components and a heat transfer and storage system in thermal communication with the hybrid solar collector, the heat transfer and storage system using particle laden gas as thermal media to simultaneously generate and store electricity and high temperature dispatchable heat.

Abstract: A hybrid solar system including a hybrid solar collector using non-imaging optics and photovoltaic components and a heat transfer and storage system in thermal communication with the hybrid solar collector, the heat transfer and storage system using particle laden gas as thermal media to simultaneously generate and store electricity and high temperature dispatchable heat.

Abstract: A thermophotovoltaic (TPV) system includes multiple thermo-photovoltaic modules that provide power to an application. Different thermo-photovoltaic modules provide different power levels to the application. Electronics can activate a portion of the thermo-photovoltaic modules in response to the power requirements of the application.

Abstract: A hybrid solar system including a hybrid solar collector using non-imaging optics and photovoltaic components and a heat transfer and storage system in thermal communication with the hybrid solar collector, the heat transfer and storage system using particle laden gas as thermal media to simultaneously generate and store electricity and high temperature dispatchable heat.

Abstract: The present invention provides a plasmonic optical transformer to produce a highly focuses optical beam spot, where the transformer includes a first metal layer, a dielectric layer formed on the first metal layer, and a second metal layer formed on the dielectric layer, where the first metal layer, the dielectric layer, and the second layer are patterned to a shape including a first section having a first cross section, a second section following the first section having a cross-section tapering from the first section to a smaller cross-section, and a third section following the second section having a cross-section matching the tapered smaller cross-section of the second section.

Abstract: This disclosure provides systems, methods, and apparatus related to probes for multidimensional nanospectroscopic imaging. In one aspect, a method includes providing a transparent tip comprising a dielectric material. A four-sided pyramidal-shaped structure is formed at an apex of the transparent tip using a focused ion beam. Metal layers are deposited over two opposing sides of the four-sided pyramidal-shaped structure.

Abstract: This disclosure provides systems, methods, and apparatus related to probes for multidimensional nanospectroscopic imaging. In one aspect, a method includes providing a transparent tip comprising a dielectric material. A four-sided pyramidal-shaped structure is formed at an apex of the transparent tip using a focused ion beam. Metal layers are deposited over two opposing sides of the four-sided pyramidal-shaped structure.

Abstract: The present invention provides a plasmonic optical transformer to produce a highly focuses optical beam spot, where the transformer includes a first metal layer, a dielectric layer formed on the first metal layer, and a second metal layer formed on the dielectric layer, where the first metal layer, the dielectric layer, and the second layer are patterned to a shape including a first section having a first cross section, a second section following the first section having a cross-section tapering from the first section to a smaller cross-section, and a third section following the second section having a cross-section matching the tapered smaller cross-section of the second section,

Abstract: The shielded spiral sheet antenna concept permits a small efficient antenna structure that is much smaller than the electromagnetic wavelength. In such small structures, the radiation usually goes almost all directions. A geometrical structure that shields the radiation from absorbers, and it directs the radiation in the opposite direction. This is difficult to achieve in very small radiators. At the same time, the shielded spiral sheet structure is more efficient than other antennas. Its radiation is shielded from an adjacent absorber by an asymmetric metallic border. The specifications of the asymmetric metallic border are given by an operational mathematical procedure.

Abstract: The spiral sheet antenna allows a small efficient antenna structure that is much smaller than the electromagnetic wavelength. It achieves the small size by introducing a high effective dielectric constant through geometry rather than through a special high dielectric constant material. It typically includes a rectangular cylinder-like shape, with a seam. The edges of the seam can overlap to make a high capacitance, or they can make a high capacitance by simply having the edges of the seam very close to each other. The high capacitance serves the same role as a high dielectric constant material in a conventional compact antenna.

Abstract: A two dimensional periodic pattern of capacitive and inductive elements defined in the surface of a metal sheet are provided by a plurality of conductive patches each connected to a conductive back plane sheet between which an insulating dielectric is disposed. The elements acts to suppress surface currents in the surface defined by them. In particular, the array forms a ground plane mesh for use in combination with an antenna. The performance of a ground plane mesh is characterized by a frequency band within which no substantial surface currents are able to propagate along the ground plane mesh. Use of such a ground plane in aircraft or other metallic vehicles thereby prevents radiation from the antenna from propagating along the metallic skin of the aircraft or vehicle. This eliminates surface currents between the antenna and the ground plane thereby reducing power loss and unwanted coupling between neighboring antennae.

Abstract: In the fabrication of microelectronic, optoelectronic, and photonic devices, methods are being used which involve selective processing of material in the presence of a patterned mask layer; for example, such processing may involve etching. Typically, mask layer material is chosen on the basis of response to suitable radiation, allowing for patterning by selective irradiation followed by selective removal of mask layer material. However, in so-called epitaxial lift-off processing, material to be processed may be covered with a support layer of a material which is selected in view of desired mechanical and thermal properties, and which is not amenable to patterning by radiation. A method is described which provides for patterning of such layer by heated mechanical means such as a heated stylus or roller.

Abstract: An omnidirectional optical reflector structure (41, 52, 61) is made by forming a plurality of holes in a solid body (11) so as to result in a face-centered cubic lattice. Conventiently, the desired structure can be made by three successive steps of microfabrication, e.g., in the presence of a mask layer (12). Preferred reflector structures can be used, e.g., as external mirrors as filters, and as cavity materials of communications lasers with improved signal-to-noise ratio.

Abstract: A method of passivating GaAs and InGaAs by growing on the GaAs or InGaAs used for semiconducting devices a surface film of glassy As.sub.2 S.sub.3 which acts as a passivating layer. The film growth is preferably done by precipitating As.sub.2 S.sub.3 from a solution containing NH.sub.4 OH, so as to make it basic, and then annealing the precipitated film at a temperature between the glass transition temperature (200.degree. C.) and the melting point (315.degree. C.) of As.sub.2 S.sub.3.

Abstract: A method for removing an epitaxial film from a single crystal substrate upon which it is grown and adhering the films to second substrate and the resultant structure. The removing method comprises (a) providing a thin release layer (.ltoreq.100 nm) between the film to be grown and the single crystal substrate; (b) growing the epitaxial film; (c) applying a polymeric support layer which is under tension over the film; and (d) selectively etching the release layer, the tension in the support layer causing the edges of the film to curve upwardly as the release layer is etched away. The adhering method uses either adhesives or relies solely on Van der Waals bonding between the epitaxial film and the second substrate.

Abstract: A method for removing epitaxial films from a single crystal substrate upon which it is grown comprising (a) providing a thin release layer (.ltoreq.1000A) between the film to be grown and the substrate; (b) growing the epitaxial film(s); (c) applying a polymeric support layer which is under tension over the film; and (d) selectively etching the release layer, the tension in the support layer causing the edges of the film to curve upwardly as the release layer is etched away.

Abstract: A method of passivating the surface of an indium gallium arsenide substrate by cleaning the indium gallium arsenide substrate in an etching solution and depositing a sodium hydroxide film on the substrate. The step of depositing the sodium hydroxide film is preferably performed by spin-on of a sodium hydroxide solution, followed by drying or annealing. The resulting passivated surface exhibits superior surface recombination velocity characteristics compared to prior art passivation techniques, thereby making possible superior solid state device operating characteristics.

Abstract: A method of making a semiconductor laser from a gallium arsenide substrate of a first conductivity type by depositing a first layer of semiconductor material having the composition Al.sub.x Ga.sub.1-x As of first conductivity type on the substrate and a thin second layer of semiconductor material for quantum confinement having the composition In.sub.y Ga.sub.1-y As on the first layer. This layer experiences sufficient strain in the semiconductor structure so as to minimize the threshold current density. The device is completed by depositing a third layer of semiconductor material having the composition Al.sub.x Ga.sub.1-x As and of second conductivity type on the second layer, and depositing a fourth layer of semiconductor material having the composition GaAs and of second conductivity type on the third layer.

Abstract: A method of passivating the surface of a gallium arsenide substrate by cleaning the gallium arsenide substrate in an etching solution and depositing a sulfide film on the substrate. The step of depositing the sulfide film is preferably performed by spin-on of a sodium sulfide solution, followed by drying or annealing. The resulting passivated surface exhibits superior surface recombination velocity characteristics compared to prior art passivation techniques, thereby making possible superior solid state device operating characteristics.