Abstract: A solid state, electronic, optical transition device includes a multiple-layer structure of semiconductor material which supports substantially ballistic electron/hole transport at energies above/below the conduction/valance band edge. The multiple layer structure of semiconductor material includes a Fabry-Perot filter element for admitting electrons/holes at a first quasibound energy level above/below the conduction/valance band edge, and for depleting electrons/holes at a second quasibound energy level which is lower/higher than the first energy level. Such an arrangement allows common semiconductor material to be used to produce emitters and detectors and other devices which can operate at any of selected frequencies over a wide range of frequencies.

Abstract: A solid state, quantum mechanical electron/hole wave device in the form of a switch or multiplexor includes a layer of semiconductor material supporting substantially ballistic electron/hole transport and a periodic grating structure formed in the layer of semiconductor material, with the grating structure comprising a modulation in electron/hole potential energy and/or effective mass. Preferably, means are provided for applying and varying the grating modulation. By constructing the device to divide the input substantially completely into two output beams (to operate in the Bragg regime), a useful switch is provided. Likewise, by constructing the device to divide the input into a selected number of three or more output beams (to operate in the Raman-Nath regime), a useful multiplexor is provided.

Abstract: A method of forming an antireflection rectangular-groove surface-relief grating on a lossy substrate exposed to incident waves of transverse electric or transverse magnetic or combination of polarizations and any angle of incidence in a lossless medium. The required thickness and complex refractive index of a single homogeneous layer on a lossy substrate to produce zero reflectivity is first computed using an impedance matching approach. The filling factor and groove depth of the rectangular groove surface-relief grating that is equivalent to the single homogeneous layer in the long-wavelength limit are then calculated. The surface-relief grating is then formed on the lossy substrate by reactive ion etching, electron beam lithography, or holography.

Abstract: Continuously tunable, biased, semiconductor superlattice electron interference filter/emitter which can serve, for example, as a hot electron emitter in a ballistic transistor, provides energy selectivity for substantially ballistic electron wave propagation at electron energies above the superlattice potential barriers. The layers of the biased superlattice have alternatively high and low electron refractive indices wherein each layer is a quarter or half of an electron wavelength in thickness and wherein the quantum well barrier widths are adjusted in the direction of emission to provide the desired energy selectivity.

Abstract: Semiconductor, quantum well, electron and hole slab waveguides include a substrate semiconductor layer, a film semiconductor layer, and a cover semiconductor layer, wherein the semiconductor layers provide substantially ballistic transport for electrons and wherein the thicknesses and compositions of the semiconductor layers are determined in accordance with the inventive method to provide a waveguide.