Abstract: A method of fast and complete laser removal of inorganic and organic foreign material, including particles down to submicron-sizes and atomic contaminants, such as heavy metals and alkaline elements, from a substrate without any damage to the substrate, carried out by UV laser irradiation of the substrate surface in a reactive oxygen based gas, which comprises carrying out the removal process in the presence of gas containing F and/or Cl atoms in its molecules.

Abstract: A method of fast and complete laser removal of inorganic and organic foreign material, including particles down to submicron-sizes and atomic contaminants, such as heavy metals and alkaline elements, from a substrate without any damage to the substrate, carried out by UV laser irradiation of the substrate surface in a reactive oxygen based gas, which comprises carrying out the removal process in the presence of gas containing F and/or Cl atoms in its molecules.

Abstract: Semiconductor processing apparatus, including a chamber, into which a semiconductor wafer is introduced for processing thereof and a heater, which heats the wafer in the chamber. A radiation guide collects thermal radiation from a selected region of the wafer. A wafer support assembly supports the wafer and shields the radiation guide from radiation other than radiation from the region. A pyrometer, coupled to receive the radiation from the guide, analyzes the radiation to determine a temperature of the region, for use in controlling the processing.

Abstract: A process and apparatus for carrying out the removal of a coating substance from the sidewalls of a surface to be stripped comprising, providing a laser beam incidence on the surface at an incidence angle &agr; relative to the plane of the surface being treated, wherein the angle &agr;>0, and periodically switching or gradually changing the azimuth of the beam incidence plane.