Patents by Inventor Elina Färm
Elina Färm has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240133032Abstract: The current disclosure relates to methods of depositing transition metal on a substrate. The disclosure further relates to a transition metal layer, to a structure and to a device comprising a transition metal layer. In the method, transition metal is deposited on a substrate by a cyclical deposition process, and the method comprises providing a substrate in a reaction chamber, providing a transition metal precursor to the reaction chamber in a vapor phase and providing a reactant to the reaction chamber in a vapor phase to form transition metal on the substrate. The transition metal precursor comprises a transition metal from any of groups 4 to 6, and the reactant comprises a group 14 element selected from Si, Ge or Sn.Type: ApplicationFiled: December 15, 2023Publication date: April 25, 2024Inventors: Charles Dezelah, Jan Willem Maes, Elina Färm, Saima Ali, Antti Niskanen
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Publication number: 20240110277Abstract: The present disclosure relates to methods and apparatuses for depositing a transition metal nitride-containing material on a substrate in the field of manufacturing semiconductor devices. Methods according to the current disclosure comprise a cyclic deposition process, in which a substrate is provided in a reaction chamber, an organometallic transition metal precursor is provided to the reaction chamber in a vapor phase, and a nitrogen precursor is provided into the reaction chamber in a vapor phase to form a transition metal nitride on the substrate. The disclosure further relates to a transition metal nitride layer, to a semiconductor structure and a device, as well as to a deposition assembly for depositing a transition metal nitride on a substrate.Type: ApplicationFiled: December 6, 2023Publication date: April 4, 2024Inventors: Elina Färm, Jan Willem Maes, Charles Dezelah, Shinya Iwashita
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Publication number: 20240096633Abstract: The disclosure relates to methods of selectively depositing material comprising a group 3 to 6 transition metal on a first surface of a substrate relative to a second surface of the substrate by a cyclic deposition process. The method includes providing a substrate in a reaction chamber, providing a transition metal precursor into the reaction chamber in a vapor phase, wherein the transition metal precursor comprises an aromatic ligand and providing a second precursor into the reaction chamber in a vapor phase to deposit transition metal on the first surface of the substrate. The disclosure further relates to a transition metal layers, and to deposition assemblies.Type: ApplicationFiled: September 13, 2023Publication date: March 21, 2024Inventors: Elina Färm, Jan Willem Maes, Charles Dezelah, Shinya Iwashita, Arpita Saha, Eva Tois, Marko Tuominen, Janne-Petteri Niemelä, Patricio Eduardo Romero, Chiyu Zhu, Glen Wilk, Holger Saare, YoungChol Byun, Jonahtan Bakke
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Publication number: 20240096632Abstract: The current disclosure relates to methods of depositing a material comprising a transition metal and a halogen on a substrate. The disclosure further relates to a transition metal layer, to a structure and to a device comprising a layer that comprises a transition metal and a halogen. In the method, transition metal and halogen is deposited on a substrate by a cyclical deposition process, and the method includes providing a substrate in a reactor chamber, providing a transition metal precursor into the reactor chamber in vapor phase, and providing a haloalkane precursor into the reactor chamber in vapor phase to form a material comprising transition metal and halogen on the substrate. The disclosure further relates to a deposition assembly for depositing a material including a transition metal and a halogen on a substrate.Type: ApplicationFiled: September 13, 2023Publication date: March 21, 2024Inventors: Elina Färm, Charles Dezelah, Jan Willem Maes
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Patent number: 11885020Abstract: Methods of depositing transition metal on a substrate. The disclosure further relates to a transition metal layer, to a structure and to a device comprising a transition metal layer. In the method, transition metal is deposited on a substrate by a cyclical deposition process, and the method comprises providing a substrate in a reaction chamber, providing a transition metal precursor to the reaction chamber in a vapor phase and providing a reactant to the reaction chamber in a vapor phase to form transition metal on the substrate. The transition metal precursor comprises a transition metal from any of groups 4 to 6, and the reactant comprises a group 14 element selected from Si, Ge or Sn.Type: GrantFiled: December 17, 2021Date of Patent: January 30, 2024Assignee: ASM IP Holding B.V.Inventors: Charles Dezelah, Jan Willem Maes, Elina Färm, Saima Ali, Antti Niskanen
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Patent number: 11885014Abstract: Methods are provided for depositing a transition metal nitride-containing material on a substrate in the field of manufacturing semiconductor devices. Methods according to the current disclosure comprise a cyclic deposition process, in which a substrate is provided in a reaction chamber, an organometallic transition metal precursor is provided to the reaction chamber in a vapor phase, and a nitrogen precursor is provided into the reaction chamber in a vapor phase to form a transition metal nitride on the substrate. A transition metal nitride layer, a semiconductor structure and a device, as well as a deposition assembly for depositing a transition metal nitride on a substrate are further provided.Type: GrantFiled: June 24, 2022Date of Patent: January 30, 2024Assignee: ASM IP Holding B.V.Inventors: Elina Färm, Jan Willem Maes, Charles Dezelah, Shinya Iwashita
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Patent number: 11749523Abstract: The present application discloses forming self-assembled monolayers (SAMs) by exposing the substrate at least twice to SAM precursors with intervening cooling of a substrate.Type: GrantFiled: September 23, 2022Date of Patent: September 5, 2023Assignee: ASM IP HOLDING B.V.Inventor: Elina Färm
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Publication number: 20230096838Abstract: Disclosed are methods and systems for filling a gap. An exemplary method comprises providing a substrate to a reaction chamber. The substrate comprises the gap. The method comprises filling the gap with a metal-containing material.Type: ApplicationFiled: September 27, 2022Publication date: March 30, 2023Inventors: Jan Willem Maes, Elina Färm, Charles Dezelah, Shinya Iwashita
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Publication number: 20230042093Abstract: The present application discloses forming self-assembled monolayers (SAMs) by exposing the substrate at least twice to SAM precursors with intervening cooling of a substrate.Type: ApplicationFiled: September 23, 2022Publication date: February 9, 2023Inventor: Elina Färm
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Publication number: 20220411919Abstract: The present disclosure relates to methods and apparatuses for depositing a transition metal nitride-containing material on a substrate in the field of manufacturing semiconductor devices. Methods according to the current disclosure comprise a cyclic deposition process, in which a substrate is provided in a reaction chamber, an organometallic transition metal precursor is provided to the reaction chamber in a vapor phase, and a nitrogen precursor is provided into the reaction chamber in a vapor phase to form a transition metal nitride on the substrate. The disclosure further relates to a transition metal nitride layer, to a semiconductor structure and a device, as well as to a deposition assembly for depositing a transition metal nitride on a substrate.Type: ApplicationFiled: June 24, 2022Publication date: December 29, 2022Inventors: Elina Färm, Jan Willem Maes, Charles Dezelah, Shinya Ishiwata
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Publication number: 20220367173Abstract: Methods are provided herein for deposition of oxide films. Oxide films may be deposited, including selective deposition of oxide thin films on a first surface of a substrate relative to a second, different surface of the same substrate. For example, an oxide thin film such as an insulating metal oxide thin film may be selectively deposited on a first surface of a substrate relative to a second, different surface of the same substrate. The second, different surface may be an organic passivation layer.Type: ApplicationFiled: July 21, 2022Publication date: November 17, 2022Inventors: Suvi P. Haukka, Elina Färm, Raija H. Matero, Eva E. Tois, Hidemi Suemori, Antti Juhani Niskanen, Sung-Hoon Jung, Petri Räisänen
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Patent number: 11495455Abstract: The present application discloses forming self-assembled monolayers (SAMs) by exposing the substrate at least twice to SAM precursors with intervening cooling of a substrate.Type: GrantFiled: January 15, 2021Date of Patent: November 8, 2022Assignee: ASM IP HOLDING B.V.Inventor: Elina Färm
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Publication number: 20220285211Abstract: Disclosed are methods and systems for filling a gap. An exemplary method comprises providing a substrate to a reaction chamber. The substrate comprises the gap. The method further comprises at least partially filling the gap with a gap filling fluid. The methods and systems are useful, for example, in the field of integrated circuit manufacture.Type: ApplicationFiled: February 25, 2022Publication date: September 8, 2022Inventors: Elina Färm, Shinya Iwashita, Charles Dezelah, Jan Willem Maes, Timothee Blanquart, René Henricus Jozef Vervuurt, Viljami Pore, Giuseppe Alessio Verni, Qi Xie, Ren-Jie Chang, Eric James Shero
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Patent number: 11430656Abstract: Methods are provided herein for deposition of oxide films. Oxide films may be deposited, including selective deposition of oxide thin films on a first surface of a substrate relative to a second, different surface of the same substrate. For example, an oxide thin film such as an insulating metal oxide thin film may be selectively deposited on a first surface of a substrate relative to a second, different surface of the same substrate. The second, different surface may be an organic passivation layer.Type: GrantFiled: November 29, 2016Date of Patent: August 30, 2022Assignee: ASM IP HOLDING B.V.Inventors: Suvi P. Haukka, Elina Färm, Raija H. Matero, Eva E. Tois, Hidemi Suemori, Antti Juhani Niskanen, Sung-Hoon Jung, Petri Räisänen
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Publication number: 20220254642Abstract: The current disclosure relates to methods and apparatuses for the manufacture of semiconductor devices In the disclosure, a transition metal-containing material is selectively deposited on a substrate by a cyclic deposition process. The deposition method comprises providing a substrate in a reaction chamber, wherein the substrate comprises a first surface comprising a first material, and a second surface comprising a second material. A transition metal precursor comprising a transition metal halide compound is provided in the reaction chamber in vapor phase and a second precursor is provided in the reaction chamber in vapor phase to deposit a transition metal-containing material on the first surface relative to the second surface. A transition metal compound may comprise an adduct-forming ligand. Further, a deposition assembly for depositing transition metal-comprising material is disclosed.Type: ApplicationFiled: February 8, 2022Publication date: August 11, 2022Inventors: Elina Färm, Jan Willem Maes, Saima Ali
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Publication number: 20220195599Abstract: The current disclosure relates to methods of depositing transition metal on a substrate. The disclosure further relates to a transition metal layer, to a structure and to a device comprising a transition metal layer. In the method, transition metal is deposited on a substrate by a cyclical deposition process, and the method comprises providing a substrate in a reaction chamber, providing a transition metal precursor to the reaction chamber in a vapor phase and providing a reactant to the reaction chamber in a vapor phase to form transition metal on the substrate. The transition metal precursor comprises a transition metal from any of groups 4 to 6, and the reactant comprises a group 14 element selected from Si, Ge or Sn.Type: ApplicationFiled: December 17, 2021Publication date: June 23, 2022Inventors: Charles Dezelah, Jan Willem Maes, Elina Färm, Saima Ali, Antti Niskanen
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Publication number: 20220139713Abstract: The current disclosure relates to methods of depositing molybdenum on a substrate. The disclosure further relates to a molybdenum layer, to a structure and to a device comprising a molybdenum layer. In the method, molybdenum is deposited on a substrate by a cyclical deposition process, and the method comprises providing a substrate in a reaction chamber, providing a molybdenum precursor to the reaction chamber in a vapor phase and providing a reactant to the reaction chamber in a vapor phase to form molybdenum on the substrate. The molybdenum precursor comprises a molybdenum atom and a hydrocarbon ligand, and the reactant comprises a hydrocarbon comprising two or more halogen atoms, and at least two halogen atoms are attached to different carbon atoms.Type: ApplicationFiled: October 27, 2021Publication date: May 5, 2022Inventors: Elina Färm, Jan Willem Maes, Charles Dezelah, Shinya Iwashita
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Publication number: 20220025513Abstract: Methods are provided for selectively depositing a material on a first metal or metallic surface of a substrate relative to a second, dielectric surface of the substrate, or for selectively depositing metal oxides on a first metal oxide surface of a substrate relative to a second silicon oxide surface. The selectively deposited material can be, for example, a metal, metal oxide, metal nitride, metal silicide, metal carbide and/or dielectric material. In some embodiments a substrate comprising a first metal or metallic surface and a second dielectric surface is alternately and sequentially contacted with a first vapor-phase metal halide reactant and a second reactant. In some embodiments a substrate comprising a first metal oxide surface and a second silicon oxide surface is alternately and sequentially contacted with a first vapor phase metal fluoride or chloride reactant and water.Type: ApplicationFiled: October 13, 2021Publication date: January 27, 2022Inventors: Suvi P. Haukka, Raija H. Matero, Elina Färm, Tom E. Blomberg
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Publication number: 20210358739Abstract: Methods for selective deposition, and structures thereof, are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. A passivation layer is selectively formed from vapor phase reactants on the first surface while leaving the second surface without the passivation layer. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the passivation layer. The first surface can be metallic while the second surface is dielectric, or the second surface is dielectric while the second surface is metallic. Accordingly, material, such as a dielectric, can be selectively deposited on either metallic or dielectric surfaces relative to the other type of surface using techniques described herein. Techniques and resultant structures are also disclosed for control of positioning and shape of layer edges relative to boundaries between underlying disparate materials.Type: ApplicationFiled: July 29, 2021Publication date: November 18, 2021Inventors: Eva E. Tois, Suvi P. Haukka, Raija H. Matero, Elina Färm, Delphine Longrie, Hidemi Suemori, Jan Willem Maes, Marko Tuominen, Shaoren Deng, Ivo Johannes Raaijmakers, Andrea Illiberi
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Patent number: 11174550Abstract: Methods are provided for selectively depositing a material on a first metal or metallic surface of a substrate relative to a second, dielectric surface of the substrate, or for selectively depositing metal oxides on a first metal oxide surface of a substrate relative to a second silicon oxide surface. The selectively deposited material can be, for example, a metal, metal oxide, metal nitride, metal silicide, metal carbide and/or dielectric material. In some embodiments a substrate comprising a first metal or metallic surface and a second dielectric surface is alternately and sequentially contacted with a first vapor-phase metal halide reactant and a second reactant. In some embodiments a substrate comprising a first metal oxide surface and a second silicon oxide surface is alternately and sequentially contacted with a first vapor phase metal fluoride or chloride reactant and water.Type: GrantFiled: September 18, 2019Date of Patent: November 16, 2021Assignee: ASM IP HOLDING B.V.Inventors: Suvi P. Haukka, Raija H. Matero, Elina Färm, Tom E. Blomberg