Patents by Inventor Eline Raymenants

Eline Raymenants has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MAGNETIC DEVICE HAVING PLURALITY OF COUPLED MAGNETIC TUNNEL JUNCTION PILLARS
    Publication number: 20240023459
    Abstract: A magnetic device may include at least two MTJ pillars, each MTJ pillar comprising a stack of a heavy metal layer portion, a second free magnetic layer portion, a spacer portion, a first free magnetic layer portion, a tunnel barrier layer portion, and a fixed magnetic layer portion, wherein at least the heavy metal layer portions, the second free magnetic layer portions and the spacer portions extend between the MTJ pillars through respectively an interconnecting heavy metal layer portion, an interconnecting second free magnetic layer portion and an interconnecting spacer portion, and wherein the interconnecting second free magnetic layer portion has an in-plane magnetization and the second free magnetic layer portions have an out-of-plane magnetization.
    Type: Application
    Filed: July 12, 2023
    Publication date: January 18, 2024
    Inventors: Van Dai Nguyen, Eline Raymenants, Sebastien Couet, Maxwel Gama Monteiro Junior, Bob Vermeulen
  • Magnetic device with a hybrid free layer stack
    Patent number: 11587708
    Abstract: In one aspect, the disclosed technology relates to a magnetic device, which may be a magnetic memory and/or logic device. The magnetic device can comprise a seed layer; a first free magnetic layer provided on the seed layer; an interlayer provided on the first free magnetic layer; a second free magnetic layer provided on the interlayer; a tunnel barrier provided on the second free magnetic layer; and a fixed magnetic layer. The first free magnetic layer and the second free magnetic layer can be ferromagnetically coupled across the interlayer through exchange interaction.
    Type: Grant
    Filed: September 30, 2020
    Date of Patent: February 21, 2023
    Assignees: IMEC vzw, Katholieke Universiteit Leuven
    Inventors: Van Dai Nguyen, Sebastien Couet, Olivier Bultynck, Danny Wan, Eline Raymenants
  • MAGNETIC DEVICE WITH A HYBRID FREE LAYER STACK
    Publication number: 20210104344
    Abstract: In one aspect, the disclosed technology relates to a magnetic device, which may be a magnetic memory and/or logic device. The magnetic device can comprise a seed layer; a first free magnetic layer provided on the seed layer; an interlayer provided on the first free magnetic layer; a second free magnetic layer provided on the interlayer; a tunnel barrier provided on the second free magnetic layer; and a fixed magnetic layer. The first free magnetic layer and the second free magnetic layer can be ferromagnetically coupled across the interlayer through exchange interaction.
    Type: Application
    Filed: September 30, 2020
    Publication date: April 8, 2021
    Inventors: Van Dai Nguyen, Sebastien Couet, Olivier Bultynck, Danny Wan, Eline Raymenants