Abstract: A method for the formation of a layer on at least one substrate. A liquid, which contains the material for forming the layer, flows over the surface of the substrate of the substrate to be coated. A concentration gradient of the layer-forming material is produced in a direction, perpendicular to the direction of the flow of the liquid. As a result, the concentration of the layer-forming material becomes a maximum at one side of the liquid.

Abstract: By a liquid epitaxial process monocrystalline semiconductor layers are produced having a high degree of crystal perfection in a multi-layer arrangement on intermediate layers of an insulating material and/or carbone and/or metal, in order to produce three-dimensional semiconductor structures which offer low mechanical stresses and load-bearing densities of between 10.sup.14 and 10.sup.21 per cm.sup.3. Very low manufacturing temperatures can be used, for example between 300.degree. and 900.degree. C. The seeding for each epitaxial layer is performed in the openings of the intermediate layer where a monocrystalline material is located in a free state. From these openings, the lateral and monocrystalline growth of the intermediate layers takes place. The repeated application of the liquid epitaxial process described allows three-dimensional integration in monocrystalline multilayer structures which are extremely devoid of defects.

Abstract: The present invention relates to a new application of the liquid epitaxial method, especially the manufacturing of epitaxial monocrystalline semiconductor layers having high crystalline perfection in multi-layer arrangements on an intermediate layer of an insulating material and/or carbon and/or metal for the manufacturing of a three-dimensional semi-conductor structure, in which low mechanical stresses are present and the charge carrier capacity is available between 10.sup.14 and 10.sup.21 per cubic centimeter, wherein very low process temperatures can be used, namely between 300.degree. and 900.degree. C. The seeding for the epitaxial layer is performed in openings made in the intermediate layer, wherein the monocrystalline material is exposed. From the openings the intermediate layers become overgrown laterally and in a monocrystalline fashion.

Abstract: A rotary head is provided with supply chambers near the center of rotation ommunicating with slot-like channels extending radially to a surrounding annular space. Substrates are set into holders, such as dovetail guides in the channel walls to expose surfaces to the liquid that flows by through the channels from the supply chambers when the head is set into rotation. The used liquid, after it reaches the annular space, flows down into a catch basin at the bottom of a surrounding casing, which casing also has an opening at the top for loading the supply chambers.