Abstract: A semiconductor device 100 comprising a gate structure 105 on a semiconductor substrate 110 and a recessed-region 115 in the semiconductor substrate. The recessed-region has a widest lateral opening 120 that is near a top surface 122 of the semiconductor substrate. The widest lateral opening undercuts the gate structure.

Abstract: The present invention facilitates semiconductor fabrication by providing methods of fabrication that tailor applied strain profiles to channel regions of transistor devices. A strain profile is selected for the channel regions (104). Recessed regions are formed (106) in active regions of a semiconductor device after formation of gate structures according to the selected strain profile. A recess etch (106) is employed to remove a surface portion of the active regions thereby forming the recess regions. Subsequently, a composition controlled recess structure is formed (108) within the recessed regions according to the selected strain profile. The recess structure is comprised of a strain inducing material, wherein one or more of its components are controlled and/or adjusted during formation (108) to tailor the applied vertical channel strain profile.

Abstract: Generally, an embodiment of the present invention provides an optical input/output (I/O) chip that is fabricated separately and distinctly from an electrical integrated circuit chip having core circuitry thereon. The electronic and optical I/O chips are later electrically connected (e.g., using packing technology) to form a hybrid optical-electronic chip system that utilizes optical I/O components on the optical I/O chip to communicate at least some of the I/O signals into and out of the electrical integrated circuit on the distinct electronic chip.