Abstract: Adding nitrogen to the Si—SiO2 interface at STI sidewalls increases carrier mobility in MOS transistors, but control of the amount of nitrogen has been problematic due to loss of the nitrogen during liner oxide growth. This invention discloses a method of forming STI regions which have a controllable layer of nitrogen atoms at the STI sidewall interface. Nitridation is performed on the STI sidewalls by exposure to a nitrogen-containing plasma, by exposure to NH3 gas at high temperatures, or by deposition of a nitrogen-containing thin film. Nitrogen is maintained at a level of 1.0·1015 to 3.0·1015 atoms/cm2, preferably 2.0·1015 to 2.4·1015 atoms/cm2, at the interface after growth of a liner oxide by adding nitrogen-containing gases to an oxidation ambient. The density of nitrogen is adjusted to maximize stress in a transistor adjacent to the STI regions. An IC fabricated according to the inventive method is also disclosed.

Abstract: A semiconductor device comprises a gate structure on a semiconductor substrate and a recessed region in the semiconductor substrate. The recessed region has a widest lateral opening that is near a top surface of the semiconductor substrate. The widest lateral opening undercuts the gate structure.

Abstract: A semiconductor device comprises a gate structure on a semiconductor substrate and a recessed region in the semiconductor substrate. The recessed region has a widest lateral opening that is near a top surface of the semiconductor substrate. The widest lateral opening undercuts the gate structure.

Abstract: A semiconductor device comprises a gate structure on a semiconductor substrate and a recessed region in the semiconductor substrate. The recessed region has a widest lateral opening that is near a top surface of the semiconductor substrate. The widest lateral opening undercuts the gate structure.

Abstract: A semiconductor device comprises a gate structure on a semiconductor substrate and a recessed region in the semiconductor substrate. The recessed region has a widest lateral opening that is near a top surface of the semiconductor substrate. The widest lateral opening undercuts the gate structure.

Abstract: Adding nitrogen to the Si—SiO2 interface at STI sidewalls increases carrier mobility in MOS transistors, but control of the amount of nitrogen has been problematic due to loss of the nitrogen during liner oxide growth. This invention discloses a method of forming STI regions which have a controllable layer of nitrogen atoms at the STI sidewall interface. Nitridation is performed on the STI sidewalls by exposure to a nitrogen-containing plasma, by exposure to NH3 gas at high temperatures, or by deposition of a nitrogen-containing thin film. Nitrogen is maintained at a level of 1.0·1015 to 3.0·1015 atoms/cm2, preferably 2.0·1015 to 2.4·1015 atoms/cm2, at the interface after growth of a liner oxide by adding nitrogen-containing gases to an oxidation ambient. The density of nitrogen is adjusted to maximize stress in a transistor adjacent to the STI regions. An IC fabricated according to the inventive method is also disclosed.

Abstract: A semiconductor device comprising a gate structure on a semiconductor substrate and a recessed-region in the semiconductor substrate. The recessed-region has a widest lateral opening that is near a top surface of the semiconductor substrate. The widest lateral opening undercuts the gate structure.

Abstract: Disclosed is a system and method for aligning a free-space optical signal in an optical system having a light modulator having an array of pixels. In this system and method, certain pixels of the light modulator array are initially assigned for the modulation of the free-space optical signal. An alignment optical signal is generated and monitored, to determine whether the optical system components are properly aligned. The alignment optical signal is generated and propagated along a path that is substantially aligned with the path of the free-space optical signal. Detector elements are used to monitor the position (and shifts in the position) of the free-space optical signal. By reassigning the pixels of the array of the light modulator at the direction of a control system, it is possible for the light modulator to compensate for shifts in the alignment of the optical components within the system.

Abstract: The present invention facilitates semiconductor fabrication by providing methods of fabrication that tailor applied strain profiles to channel regions of transistor devices. A strain profile is selected for the channel regions (104). Recessed regions are formed (106) in active regions of a semiconductor device after formation of gate structures according to the selected strain profile. A recess etch (106) is employed to remove a surface portion of the active regions thereby forming the recess regions. Subsequently, a composition controlled recess structure is formed (108) within the recessed regions according to the selected strain profile. The recess structure is comprised of a strain inducing material, wherein one or more of its components are controlled and/or adjusted during formation (108) to tailor the applied vertical channel strain profile.

Abstract: An optical module having an integral optical waveguide with waveguide ports at each end. The optical waveguide receives an input light beam through a first waveguide port. The input light beam passes through the waveguide and is emitted from the second waveguide port, where it is reflected by the reflective surface. After being reflected by the reflective surface, the input light beam can be directed onto the surface of a DMD array, where the input light beam can be selectively reflected in a particular direction. The reflective surface may also comprise a diffractive grating, thereby enabling wavelength selective switching. In addition, the reflective surface may comprise a generally concave surface that converts a diverging input light beam into a generally collimated light beam, thereby facilitating more accurate selection and switching by the DMD array.

Abstract: The present invention facilitates semiconductor fabrication by providing methods of fabrication that mitigate leakage and apply strain to channel regions of transistor devices. A semiconductor device having gate structures, channel regions, and active regions is provided (102). Extension regions of a first type of conductivity are formed within the active regions (104). Recesses are then formed within a portion of the active regions (106). Second type recess structures are formed (108) within the recesses, wherein the second type recess structures have a second type of conductivity opposite the first type and are comprised of a strain inducing material. Then, first type recess structures are formed (110) within the recesses and on the second type recess structures, wherein the first type recess structures have the first type of conductivity and are comprised of a strain inducing material.

Abstract: Disclosed is a method for generating patterns to be used in a spatial light modulator having a plurality of pixels. The method includes generating an optical pattern to be placed upon the pixels of the spatial light modulator, applying the optical pattern to the pixels of the spatial light modulator, measuring the optical performance of the plurality of pixels having the optical pattern applied to it, comparing the measured optical performance to a target optical performance, and adjusting the optical pattern applied to the plurality of pixels to form another optical pattern that more closely achieves the target optical performance.

Abstract: Disclosed is a system and method for aligning a free-space optical signal in an optical system having a light modulator having an array of pixels. In this system and method, certain pixels of the light modulator array are initially assigned for the modulation of the free-space optical signal. An alignment optical signal is generated and monitored, to determine whether the optical system components are properly aligned. The alignment optical signal is generated and propagated along a path that is substantially aligned with the path of the free-space optical signal. Detector elements are used to monitor the position (and shifts in the position) of the free-space optical signal. By reassigning the pixels of the array of the light modulator at the direction of a control system, it is possible for the light modulator to compensate for shifts in the alignment of the optical components within the system.

Abstract: Disclosed herein is an improved optical interface system for a DMD array. One embodiment of the disclosed invention comprises an optical beam module that has an integral optical waveguide with waveguide ports at each end. The optical waveguide receives an input light beam through a first waveguide port. The input light beam passes through the waveguide and is emitted from the second waveguide port, where it is reflected by the reflective surface. The reflective surface can be integral to the optical beam module, or it can be mounted onto the module. After being reflected by the reflective surface, the input light beam can be directed onto the surface of a DMD array, where some or all of the input light beam can be selectively reflected in a particular direction. The reflective surface may also comprise a diffractive grating, which reflects the various wavelengths components of the input light beam at varying angles, thereby enabling wavelength selective switching.

Abstract: A method of fabricating a 3-D photonic band gap structure. The method can be applied to any such structure made using stacked layers of materials having alternating low and high refractive indices. At least one of these layers is deposited using extrusion coating, which eliminates the need for planarization, such as chemical mechanical polishing.

Abstract: Disclosed is a method for generating patterns to be used in a spatial light modulator having a plurality of pixels. The method includes generating an optical pattern to be placed upon the pixels of the spatial light modulator, applying the optical pattern to the pixels of the spatial light modulator, measuring the optical performance of the plurality of pixels having the optical pattern applied to it, comparing the measured optical performance to a target optical performance, and adjusting the optical pattern applied to the plurality of pixels to form another optical pattern that more closely achieves the target optical performance.