Abstract: The present invention refers to a method as well as an apparatus for depositing a layer at a substrate, the layer containing at least two components co-deposited by at least two evaporation sources, wherein the mixture of the components regarding the content of the components is set by tilting the evaporation sources to predetermined angle and/or by positioning the evaporation sources at a predetermined distance with respect to the substrate and/or wherein evaporation plumes of the evaporation sources are arranged such that the maxima of the evaporation plumes are separated locally with respect to the substrate.

Abstract: Method of depositing a TCO layer on a substrate, of depositing precursors of a solar cell and precursors of a solar cell are described. The methods includes DC sputtering a ZnO-containing transparent conductive oxide layer over the substrate, the substrate having a size of 1.4 m2 or above and texturing the ZnO-containing transparent conductive oxide layer, wherein the textured ZnO-containing transparent conductive oxide layer has a root means square roughness of 60 nm or below.

Abstract: A method for controlling surface morphology of a transparent conductive oxide film (TCO) is provided. A substrate is provided as a basis for forming a solar cell. Onto the substrate, a seed layer is deposited. Then, the method includes depositing the transparent conductive oxide film (TCO) above the seed layer. The seed layer is adapted to control the surface morphology of the transparent conductive oxide film. The surface of the transparent conductive oxide film is etched in order to provide a front contact of the solar cell.

Abstract: Methods for manufacturing a layer stack for a thin-film solar cell and layer stacks are provided. The layer stack includes a transparent substrate having a first refraction index, a transparent conductive oxide layer comprising ZnO, wherein the transparent conductive oxide layer is deposited over the substrate and has a second refraction index, and a further layer, which is deposited between the transparent conductive oxide layer and the substrate, wherein the layer has a third refraction index in a range from the first refraction index to the second refraction index, the layer comprises a metal, and wherein the layer composition has a metal content of 0.5 to 10 weight-%.

Abstract: Methods of depositing a TCO layer on a substrate and precursor for solar cells are described.

Abstract: A deposition rate monitor device for monitoring the deposition rate of a vapor on a substrate is provided, including: a piezoelectric crystal monitor device including a piezoelectric crystal monitor provided in a housing, wherein the housing includes a vapor inlet aperture, and at least one elongated shielding device having a first end and a second end, the first end encompassing the vapor inlet aperture.

Abstract: The present invention refers to a method as well as an apparatus for depositing a layer at a substrate, the layer containing at least two components co-deposited by at least two evaporation sources, wherein the mixture of the components regarding the content of the components is set by tilting the evaporation sources to predetermined angle and/or by positioning the evaporation sources at a predetermined distance with respect to the substrate and/or wherein evaporation plumes of the evaporation sources are arranged such that the maxima of the evaporation plumes are separated locally with respect to the substrate.

Abstract: The invention relates to an arrangement for the regulation of a gas stream, with a dosing pipe (16) for gas as well as a conduit pipe (10) disposed thereon. The dosing pipe (16) can be closed with a tappet (25) located on a movable rod (18).

Abstract: The invention refers to an evaporation source for depositing of thin layers on substrates, the evaporation source comprising a vapor distribution system having an evaporation pipe made of inorganic non metallic material, with the evaporation pipe having at least one nozzle, wherein the nozzle is disposed in a nozzle element which is made as a separate component being arranged in a nozzle element opening of the evaporation pipe.

Abstract: The invention relates to an arrangement for the vaporization of materials, and specifically of organic materials, such as are utilized for example in the production of OLEDs. A heating element and a device for transporting a carrier for a layer to be vaporized are herein provided. The carrier with the layer to be vaporized is guided over the heating element where the layer is vaporized and deposited on a substrate.

Abstract: An arrangement for the regulation of a gas stream or the like is provided, which comprises at least one vaporizer crucible for the vaporization of a material or at least one supply container with material vapor. The vaporized material or the material vapor is conducted via a vapor conduit to a substrate. The at least one vaporizer crucible or the at least one supply container is connected via a dosing pipe with the vapor conduit. A tappet projects into the dosing pipe. By means of a regulator the position of the tappet in the dosing pipe is regulated as a function of a measured variable.

Abstract: An arrangement and a method for the production of gas-impermeable layers, in particular for the coating of gas-permeable synthetic material substrates. With the aid of this arrangement or of the method light-permeable as well as also light-impermeable gas-blocking layers are produced using only one sputtering installation. A simple change-over switching from one gas supply, for example argon, to a second gas supply, for example argon, oxygen and nitrogen is carried out or the converse.