Patents by Inventor Elisabeth Weikmann

Elisabeth Weikmann has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for etching a trench in a semiconductor substrate
    Publication number: 20060264054
    Abstract: The present invention relates to a method for etching a trench in a semiconductor substrate. More specifically, the present invention relates to a method for etching deep trenches such as those having aspect ratios of 30 and higher. According to embodiments of the invention, a method for etching a trench in a semiconductor substrate includes a first etch cycle wherein the trench is etched to a first depth. Thereafter, a protective liner is deposited on at least the upper part of the trench's sidewalls. The protective liner includes inorganic material. During at least one second etch cycle, the trench is etched to its final depth.
    Type: Application
    Filed: April 6, 2005
    Publication date: November 23, 2006
    Inventors: Martin Gutsche, Thomas Hecht, Harald Seidl, Uwe Rudolph, Barbara Lorenz, Elisabeth Weikmann
  • Method and apparatus for providing modulated bias power to a plasma etch reactor
    Publication number: 20030153195
    Abstract: A method and apparatus for modulating the bias power applied to a wafer support pedestal within a plasma etch reactor. The modulation has an on/off duty cycle of between 10 and 90 percent. Such modulation of the bias power substantially improves the verticality of the etched features located near the edge of a semiconductor wafer as the wafer is being etched in a plasma etch reactor.
    Type: Application
    Filed: February 13, 2002
    Publication date: August 14, 2003
    Applicant: Applied Materials, Inc.
    Inventors: Elisabeth Weikmann, Aduato Diaz, Sharma V. Pamarthy, Ajay Kumar, Padmapani C. Nallan